Useong Kim

1.1k total citations
9 papers, 959 citations indexed

About

Useong Kim is a scholar working on Materials Chemistry, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Useong Kim has authored 9 papers receiving a total of 959 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Materials Chemistry, 7 papers in Electronic, Optical and Magnetic Materials and 3 papers in Electrical and Electronic Engineering. Recurrent topics in Useong Kim's work include Electronic and Structural Properties of Oxides (8 papers), Magnetic and transport properties of perovskites and related materials (7 papers) and Ferroelectric and Piezoelectric Materials (4 papers). Useong Kim is often cited by papers focused on Electronic and Structural Properties of Oxides (8 papers), Magnetic and transport properties of perovskites and related materials (7 papers) and Ferroelectric and Piezoelectric Materials (4 papers). Useong Kim collaborates with scholars based in South Korea. Useong Kim's co-authors include K. Char, Hoon Min Kim, Kee Hoon Kim, Hyung Joon Kim, Kwang Taek Hong, Byung‐Gu Jeon, Chanjong Ju, Jaejun Yu, Chulkwon Park and Tai-hoon Kim and has published in prestigious journals such as Applied Physics Letters, Physical Review B and Applied Physics Express.

In The Last Decade

Useong Kim

9 papers receiving 945 citations

Peers

Useong Kim

MC

EOMM

EEE

CMP

BE

Hoon Min Kim South Korea

Woong‐Jhae Lee South Korea

R. Font Cuba

A. K. Omaev Russia

S. J. Park South Korea

Aref Omri Tunisia

Lars Bjaalie United States

R. Dhahri Tunisia

Jin-Yong Oh South Korea

K. Maejima Japan

Hoon Min Kim South Korea

Useong Kim

775 ×0.8

MC

496 ×0.8

EOMM

375 ×0.8

EEE

118 ×0.8

CMP

35 ×0.7

BE

Citations per year, relative to Useong Kim Useong Kim (= 1×) peers Hoon Min Kim

Countries citing papers authored by Useong Kim

Since Specialization

Citations

This map shows the geographic impact of Useong Kim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Useong Kim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Useong Kim more than expected).

Fields of papers citing papers by Useong Kim

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Useong Kim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Useong Kim. The network helps show where Useong Kim may publish in the future.

Co-authorship network of co-authors of Useong Kim

This figure shows the co-authorship network connecting the top 25 collaborators of Useong Kim. A scholar is included among the top collaborators of Useong Kim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Useong Kim. Useong Kim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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9 of 9 papers shown

1.

Kim, Young Mo, Chulkwon Park, Taewoo Ha, et al.. (2017). High-k perovskite gate oxide BaHfO3. APL Materials. 5(1). 34 indexed citations

2.

Kim, Useong, et al.. (2016). Conducting interface states at LaInO3/BaSnO3 polar interface controlled by Fermi level. APL Materials. 4(7). 40 indexed citations

3.

Kim, Hoon Min, et al.. (2016). Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3. APL Materials. 4(5). 28 indexed citations

4.

Kim, Useong, Chulkwon Park, Taewoo Ha, et al.. (2015). All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3. APL Materials. 3(3). 109 indexed citations

5.

Ju, Chanjong, et al.. (2015). High mobility field effect transistor of SnOx on glass using HfOx gate oxide. Current Applied Physics. 16(3). 300–304. 10 indexed citations

6.

Kim, Useong, Chulkwon Park, Taewoo Ha, et al.. (2014). Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3. APL Materials. 2(5). 63 indexed citations

7.

Kim, Useong, Hoon Min Kim, Chulkwon Park, et al.. (2013). Large effects of dislocations on high mobility of epitaxial perovskite Ba_0.96La_0.04SnO₃ films. Applied Physics Letters. 102(25). 252105–252105. 81 indexed citations

8.

Kim, Hyung Joon, Useong Kim, Hoon Min Kim, et al.. (2012). High Mobility in a Stable Transparent Perovskite Oxide. Applied Physics Express. 5(6). 61102–61102. 337 indexed citations

9.

Kim, Hyung Joon, Useong Kim, Tai-hoon Kim, et al.. (2012). Physical properties of transparent perovskite oxides (Ba,La)SnO3with high electrical mobility at room temperature. Physical Review B. 86(16). 257 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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