Terry Torng

820 total citations
17 papers, 541 citations indexed

About

Terry Torng is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Terry Torng has authored 17 papers receiving a total of 541 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Atomic and Molecular Physics, and Optics, 12 papers in Electrical and Electronic Engineering and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Terry Torng's work include Magnetic properties of thin films (13 papers), Ferroelectric and Negative Capacitance Devices (8 papers) and Semiconductor materials and devices (5 papers). Terry Torng is often cited by papers focused on Magnetic properties of thin films (13 papers), Ferroelectric and Negative Capacitance Devices (8 papers) and Semiconductor materials and devices (5 papers). Terry Torng collaborates with scholars based in United States, Japan and Taiwan. Terry Torng's co-authors include Guenole Jan, Tom Zhong, Po-Kang Wang, Yuan-Jen Lee, Yu-Jen Wang, Ru-Ying Tong, Quang Vinh Lam, Son Le, Jianguo Zhu and Luc Thomas and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Magnetics and Applied Physics Express.

In The Last Decade

Terry Torng

17 papers receiving 503 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Terry Torng United States 10 454 311 205 109 104 17 541
Tom Zhong Taiwan 8 437 1.0× 301 1.0× 187 0.9× 92 0.8× 102 1.0× 12 508
Guenole Jan Taiwan 10 515 1.1× 344 1.1× 225 1.1× 114 1.0× 115 1.1× 12 589
Son Le United States 9 441 1.0× 274 0.9× 183 0.9× 110 1.0× 117 1.1× 24 513
Yuan-Jen Lee Taiwan 12 487 1.1× 360 1.2× 212 1.0× 109 1.0× 107 1.0× 22 610
K. Nagahara Japan 13 437 1.0× 268 0.9× 214 1.0× 140 1.3× 141 1.4× 25 533
R. Whig United States 8 371 0.8× 290 0.9× 148 0.7× 71 0.7× 110 1.1× 12 482
Srinivas V. Pietambaram United States 10 392 0.9× 325 1.0× 186 0.9× 122 1.1× 162 1.6× 15 566
Ru-Ying Tong China 7 359 0.8× 234 0.8× 160 0.8× 81 0.7× 92 0.9× 11 416
Zheng Gao United States 11 387 0.9× 193 0.6× 199 1.0× 123 1.1× 104 1.0× 25 458
J. Calder United States 5 331 0.7× 286 0.9× 129 0.6× 57 0.5× 88 0.8× 7 437

Countries citing papers authored by Terry Torng

Since Specialization
Citations

This map shows the geographic impact of Terry Torng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Terry Torng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Terry Torng more than expected).

Fields of papers citing papers by Terry Torng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Terry Torng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Terry Torng. The network helps show where Terry Torng may publish in the future.

Co-authorship network of co-authors of Terry Torng

This figure shows the co-authorship network connecting the top 25 collaborators of Terry Torng. A scholar is included among the top collaborators of Terry Torng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Terry Torng. Terry Torng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Liu, Daniel, et al.. (2019). System Demonstration of MRAM Co-designed Processing-in-Memory CNN Accelerator for Mobile and IoT Applications.. Knowledge Discovery and Data Mining. 1 indexed citations
2.
Hauet, Thomas, Tom Zhong, Terry Torng, et al.. (2017). Development of STT-MRAM for embedded memory applications. 2017 IEEE International Magnetics Conference (INTERMAG). 105. 1–1. 1 indexed citations
3.
4.
Wang, Chia-Yu, Luc Thomas, Jianguo Zhu, et al.. (2016). Reliability study of perpendicular STT-MRAM as emerging embedded memory qualified for reflow soldering at 260°C. 1–2. 15 indexed citations
5.
Jan, Guenole, L. Thomas, Son Le, et al.. (2015). Demonstration of an MgO based anti-fuse OTP design integrated with a fully functional STT-MRAM at the Mbit level. T164–T165. 9 indexed citations
6.
Thomas, Luc, Guenole Jan, Son Le, et al.. (2015). Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM. 26.4.1–26.4.4. 28 indexed citations
7.
8.
Thomas, Luc, Guenole Jan, Jianguo Zhu, et al.. (2014). Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited). Journal of Applied Physics. 115(17). 188 indexed citations
9.
Pi, K., Tom Zhong, Ru-Ying Tong, et al.. (2013). Demonstration of chip level writability, endurance and data retention of an entire 8Mb STT-MRAM array. 1–2. 6 indexed citations
10.
Jan, Guenole, Yu-Jen Wang, Takahiro Moriyama, et al.. (2012). High Spin Torque Efficiency of Magnetic Tunnel Junctions with MgO/CoFeB/MgO Free Layer. Applied Physics Express. 5(9). 93008–93008. 67 indexed citations
11.
Min, Tai, Qiang Chen, R. S. Beach, et al.. (2010). A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology. IEEE Transactions on Magnetics. 46(6). 2322–2327. 109 indexed citations
12.
Min, Tai, et al.. (2009). Study of dielectric breakdown distributions in magnetic tunneling junction with MgO barrier. Journal of Applied Physics. 105(7). 13 indexed citations
13.
Liu, Daniel, et al.. (2009). A manufacturing lithographic approach for high density MRAM device using KrF double mask patterning technique. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7274. 72743F–72743F. 2 indexed citations
14.
Ju, Kochan, Chih-Chiang Han, Jin Chang, et al.. (1999). 5 Gb/in/sup 2/ recording with dual stripe AMR heads and low noise thin film disks. IEEE Transactions on Magnetics. 35(2). 683–688. 2 indexed citations
15.
Torng, Terry, et al.. (1994). Stability and biasing characteristics of a permanent magnet biased SAL/MR device. IEEE Transactions on Magnetics. 30(6). 3855–3857. 12 indexed citations
16.
Torng, Terry, et al.. (1993). Magnetic forces for type II superconductors in a levitation field. Journal of Applied Physics. 73(3). 1198–1204. 14 indexed citations
17.
Torng, Terry, Qian Chen, Blaise Morton, & J. Lenz. (1992). Hysteretic magnetic forces calculation for type-II superconductors. IEEE Transactions on Magnetics. 28(5). 2229–2231. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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