Stefan Persson

408 total citations
28 papers, 286 citations indexed

About

Stefan Persson is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Automotive Engineering. According to data from OpenAlex, Stefan Persson has authored 28 papers receiving a total of 286 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 3 papers in Automotive Engineering. Recurrent topics in Stefan Persson's work include Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). Stefan Persson is often cited by papers focused on Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). Stefan Persson collaborates with scholars based in Sweden, United States and South Korea. Stefan Persson's co-authors include Linda Olofsson, Linda Gunnarsson, P. Dyreklev, Olle Inganäs, Helena Johnsson, Per Runeson, Kaige Tan, M. Willander, A. Ouacha and László B. Kish and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Stefan Persson

24 papers receiving 261 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Stefan Persson Sweden 9 159 84 60 55 37 28 286
Zhihong Hu China 10 160 1.0× 30 0.4× 78 1.3× 91 1.7× 23 0.6× 31 336
Weichen Tang China 10 108 0.7× 52 0.6× 36 0.6× 97 1.8× 20 0.5× 18 291
David Kirkwood United States 10 167 1.1× 62 0.7× 14 0.2× 114 2.1× 80 2.2× 18 328
Mengxia Zhang China 12 129 0.8× 17 0.2× 88 1.5× 96 1.7× 41 1.1× 40 410
F. Wang United States 6 106 0.7× 133 1.6× 67 1.1× 279 5.1× 10 0.3× 6 351
Wenxiang Peng China 12 413 2.6× 55 0.7× 63 1.1× 429 7.8× 36 1.0× 32 632
Michael Heinrich Germany 9 129 0.8× 23 0.3× 64 1.1× 64 1.2× 40 1.1× 23 287
Yuqi Liu China 14 328 2.1× 28 0.3× 30 0.5× 117 2.1× 45 1.2× 52 442
Chao Zheng Hong Kong 7 129 0.8× 57 0.7× 32 0.5× 104 1.9× 7 0.2× 25 259

Countries citing papers authored by Stefan Persson

Since Specialization
Citations

This map shows the geographic impact of Stefan Persson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Stefan Persson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Stefan Persson more than expected).

Fields of papers citing papers by Stefan Persson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Stefan Persson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Stefan Persson. The network helps show where Stefan Persson may publish in the future.

Co-authorship network of co-authors of Stefan Persson

This figure shows the co-authorship network connecting the top 25 collaborators of Stefan Persson. A scholar is included among the top collaborators of Stefan Persson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Stefan Persson. Stefan Persson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
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Tan, Kaige, et al.. (2022). Critical scenario identification for realistic testing of autonomous driving systems. Software Quality Journal. 31(2). 441–469. 19 indexed citations
3.
Tan, Kaige, et al.. (2021). An Industrial Workbench for Test Scenario Identification for Autonomous Driving Software. Lund University Publications (Lund University). 81–82. 6 indexed citations
4.
Persson, Stefan, et al.. (2009). INFORMATION MANAGEMENT IN INDUSTRIAL HOUSING DESIGN AND MANUFACTURE. Journal of Information Technology in Construction. 14(11). 110–122. 26 indexed citations
5.
Persson, Stefan, et al.. (2005). Lateral growth and three-dimensional effects in contacts between NiSi0.82Ge0.18 and p+-Si0.82Ge0.18. Thin Solid Films. 489(1-2). 159–163. 1 indexed citations
6.
Persson, Stefan, et al.. (2004). Quantifying hole mobility degradation in pMOSFETs with a strained-Si0.7Ge0.3 surface-channel under an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack. Solid-State Electronics. 48(5). 721–729. 3 indexed citations
7.
Persson, Stefan. (2004). Modeling and characterization of novel MOS devices. KTH Publication Database DiVA (KTH Royal Institute of Technology). 1 indexed citations
8.
Wu, Depei, Stefan Persson, Jörgen Olsson, et al.. (2003). ALD metal-gate/high-k gate stack for Si and Si0.7Ge0.3 surface-channel pMOSFETs. 263–266. 1 indexed citations
9.
Nawaz, Muhammad, Włodek Strupiński, J. Stenarson, Stefan Persson, & Herbert Zirath. (2003). Reliability evaluation of MOCVD grown AlInAs-GaInAs-InP HEMTs. 103–109.
10.
11.
Persson, Stefan, et al.. (2002). A charge sheet model for MOSFETs with an abrupt retrograde channel. Solid-State Electronics. 46(12). 2209–2216. 4 indexed citations
12.
Park, J.H., Haejun Yu, Jin Gyu Park, et al.. (2001). Non-linear I–V characteristics of MEH-PPV patterned on sub-micrometer electrodes. Thin Solid Films. 393(1-2). 129–131. 9 indexed citations
13.
Åberg, Jonas, Stefan Persson, P.‐E. Hellberg, et al.. (2001). Electrical properties of the TiSi2–Si transition region in contacts: The influence of an interposed layer of Nb. Journal of Applied Physics. 90(5). 2380–2388. 8 indexed citations
14.
Persson, Stefan, et al.. (2001). Buffer design and insertion for global interconnections in 0.1 μm technology. Microelectronic Engineering. 55(1-4). 19–28. 1 indexed citations
15.
Olofsson, Linda, et al.. (2000). Nanofabrication of Self-assembled Molecular-scale Electronics. Journal of Low Temperature Physics. 118(5-6). 343–353. 7 indexed citations
16.
Nawaz, Muhammad, et al.. (1999). Hot electron degradation effects in 0.14 μm AlInAs/GaInAs/InP HEMTs. Microelectronics Reliability. 39(12). 1765–1771. 4 indexed citations
17.
Nawaz, Muhammad, et al.. (1999). A new reliable fabrication-process for InP based HEMTs and MMICs with gate length from 0.06 to 0.2 um. AMS Acta (University of Bologna). 1 indexed citations
18.
Persson, Stefan, Linda Olofsson, & Linda Gunnarsson. (1999). A self-assembled single-electron tunneling transistor. Applied Physics Letters. 74(17). 2546–2548. 55 indexed citations
19.
Persson, Stefan, Linda Olofsson, Lise Hedberg, Duncan S. Sutherland, & Eva Olsson. (1998). A Self‐Assembled Single‐Electron Tunneling Device. Annals of the New York Academy of Sciences. 852(1). 188–196. 8 indexed citations
20.
Haviland, D. B., et al.. (1996). Fabrication and measurement of one-dimensional arrays of small capacitance Josephson junctions. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 14(3). 1839–1843. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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