S. Shirotori

446 citations

29 papers · 331 indexed · h-index 12

Co-authors: T. Inokuchi Y. Ohsawa H. Yoda Y. Kamiguchi K. Koi A. Kurobe Yushi Kato M. Ishikawa
Topics: Magnetic properties of thin films (19 papers)Ferroelectric and Negative Capacitance Devices (12 papers)Advanced Memory and Neural Computing (12 papers)
Cited by: Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Condensed Matter Physics
Journals: Applied Physics Letters Japanese Journal of Applied Physics Journal of Magnetism and Magnetic Materials
Partner nations: Japan

In The Last Decade

S. Shirotori

29 papers receiving 322 citations

Peers

Countries citing papers authored by S. Shirotori

Since Specialization

Citations

This map shows the geographic impact of S. Shirotori's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Shirotori with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Shirotori more than expected).

Fields of papers citing papers by S. Shirotori

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Shirotori. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Shirotori. The network helps show where S. Shirotori may publish in the future.

Co-authorship network of co-authors of S. Shirotori

This figure shows the co-authorship network connecting the top 25 collaborators of S. Shirotori. A scholar is included among the top collaborators of S. Shirotori based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Shirotori. S. Shirotori is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Symmetric Response Magnetoresistance Sensor With Low 1/f Noise by Using an Antiphase AC Modulation Bridge 2020 ·IEEE Transactions on Magnetics ·S. Shirotori,Akira Kikitsu,Yotsuo Higashi,(unknown),H. Iwasaki	13
2	Voltage-control spintronics memory (VoCSM) toward development of a 4F²-cell with strained in-plane-MTJ 2019 ·Y. Ohsawa,H. Yoda,S. Shirotori,(unknown),(unknown),H. Sugiyama,N. Shimomura,K. Koi,Yushi Kato,S. Oikawa,T. Inokuchi,A. Kurobe	4
3	From STT-MRAM to Voltage-Control Spintronics Memory (VoCSM) in Pursuit of Memory Systems with Lower Energy Consumption 2019 ·Journal of Magnetics ·H. Yoda,Y. Ohsawa,Yushi Kato,N. Shimomura,Mitsuaki Shimizu,K. Koi,S. Shirotori,T. Inokuchi,H. Sugiyama,S. Oikawa,(unknown),M. Ishikawa,A. Kurobe	3
4	Binary and ternary convolutional neural network acceleration by in-nonvolatile memory computing with Voltage Control Spintronics Memory (VoCSM) 2019 ·Kazutaka Ikegami,T. Inokuchi,Shinobu Fujita,Satoshi Takaya,N. Shimomura,(unknown),Y. Ohsawa,(unknown),K. Koi,S. Shirotori,(unknown),H. Sugiyama,S. Oikawa,(unknown),H. Yoda,A. Kurobe	3
5	Real-time observation of fast and highly reliable magnetization switching in Voltage-Control Spintronics Memory (VoCSM) 2019 ·Applied Physics Letters ·T. Inokuchi,H. Yoda,K. Koi,N. Shimomura,Y. Ohsawa,Yushi Kato,S. Shirotori,Mitsuaki Shimizu,H. Sugiyama,S. Oikawa,(unknown),A. Kurobe	15
6	Low write current and strong durability in high-speed spintronics memory (spin-Hall MRAM and VoCSM) through development of a shunt-free design process and W spin-Hall electrode 2019 ·Journal of Magnetism and Magnetic Materials ·Yushi Kato,H. Yoda,T. Inokuchi,(unknown),Y. Ohsawa,Keiko Fujii,(unknown),(unknown),S. Shirotori,K. Koi,Naoharu Shimomura,(unknown),(unknown),A. Kurobe	4
7	Ultra-High-Efficiency Writing in Voltage-Control Spintronics Memory (VoCSM): The Most Promising Embedded Memory for Deep Learning 2018 ·IEEE Journal of the Electron Devices Society ·Y. Ohsawa,Yushi Kato,T. Inokuchi,H. Sugiyama,M. Ishikawa,Kazutaka Ikegami,Satoshi Takaya,A. Kurobe,H. Yoda,N. Shimomura,S. Shirotori,Shinobu Fujita,K. Koi,(unknown),S. Oikawa,Mitsuaki Shimizu	2
8	Voltage-Control Spintronics Memory (VoCSM) with Low Write Current using Highly-Selective Patterning Process 2018 ·Journal of Magnetics ·Mitsuaki Shimizu,Y. Ohsawa,H. Yoda,S. Shirotori,(unknown),N. Shimomura,Yushi Kato,S. Oikawa,H. Sugiyama,T. Inokuchi,K. Koi,M. Ishikawa,K. Ikegami,A. Kurobe	3
9	Coexistence of Large Voltage Controlled Magnetic Anisotropy, Large Surface Anisotropy, and Large TMR by a new MTJ structure having MgO/CoFeB/Ir/CoFeB 2018 ·2018 IEEE International Magnetics Conference (INTERMAG) ·S. Oikawa,Y. Saito,H. Yoda,(unknown),Ajay Tiwari,M. Ishikawa,N. Shimomura,K. Koi,T. Inokuchi,H. Sugiyama,Mitsuaki Shimizu,S. Shirotori,(unknown),Y. Ohsawa,A. Kurobe	1
10	Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a Ta−B Spin Hall Electrode 2018 ·Physical Review Applied ·(unknown),Y. Saito,H. Yoda,T. Inokuchi,S. Shirotori,N. Shimomura,S. Oikawa,Ajay Tiwari,M. Ishikawa,Mitsuaki Shimizu,(unknown),H. Sugiyama,K. Koi,Y. Ohsawa,A. Kurobe	27
11	Ultra-high-efficient Writing in Voltage-Control Spintronics Memory(VoCSM); the Most Promising Embedded Memory for Deep Learning 2018 ·Y. Ohsawa,H. Yoda,N. Shimomura,S. Shirotori,Shinobu Fujita,K. Koi,(unknown),S. Oikawa,Mitsuaki Shimizu,(unknown),T. Inokuchi,H. Sugiyama,M. Ishikawa,Ajay Tiwari,Kazutaka Ikegami,Satoshi Takaya,A. Kurobe	3
12	Reliable Estimation of TaB Spin Hall Angle by Incorporating the Interfacial Transparency and Isolating Inverse Spin Hall Effect in ST-FMR Analysis 2018 ·2018 IEEE International Magnetics Conference (INTERMAG) ·Ajay Tiwari,H. Yoda,Yushi Kato,K. Koi,M. Ishikawa,S. Oikawa,Y. Saito,T. Inokuchi,N. Shimomura,Mitsuaki Shimizu,S. Shirotori,(unknown),H. Sugiyama,Y. Ohsawa,A. Kurobe	1
13	High-Speed Voltage-Control Spintronics Memory (High-Speed VoCSM) 2017 ·H. Yoda,(unknown),T. Inokuchi,(unknown),Y. Ohsawa,Keiko Abe,Naoharu Shimomura,Y. Saito,S. Shirotori,(unknown),(unknown),(unknown),(unknown),M. Ishikawa,Kazutaka Ikegami,(unknown),Shinobu Fujita,A. Kurobe	12
14	Voltage-Control Spintronics Memory With a Self-Aligned Heavy-Metal Electrode 2017 ·IEEE Transactions on Magnetics ·S. Shirotori,H. Yoda,Y. Ohsawa,N. Shimomura,T. Inokuchi,Yushi Kato,Y. Kamiguchi,K. Koi,Kazutaka Ikegami,H. Sugiyama,Mitsuaki Shimizu,(unknown),S. Oikawa,M. Ishikawa,Ajay Tiwari,Y. Saito,A. Kurobe	28
15	Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height 2017 ·Applied Physics Letters ·T. Inokuchi,H. Yoda,Yushi Kato,Mitsuaki Shimizu,S. Shirotori,N. Shimomura,K. Koi,Y. Kamiguchi,H. Sugiyama,S. Oikawa,Kazutaka Ikegami,M. Ishikawa,(unknown),Ajay Tiwari,Y. Ohsawa,Y. Saito,A. Kurobe	33
16	Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density 2016 ·H. Yoda,N. Shimomura,Y. Ohsawa,S. Shirotori,Yushi Kato,T. Inokuchi,Y. Kamiguchi,(unknown),Y. Saito,K. Koi,H. Sugiyama,S. Oikawa,(unknown),M. Ishikawa,Kazutaka Ikegami,A. Kurobe	52
17	All-metallic nonlocal spin valves using polycrystalline Co₂(FeMn)Si Heusler alloy with large output 2015 ·Applied Physics Express ·S. Shirotori,Susumu Hashimoto,M. Takagishi,Y. Kamiguchi,Hitoshi Iwasaki	31
18	Magnetic‐field‐induced switching of spin injectionin Zn _{1− x} Mn _x Te/ZnTe double quantum wells 2004 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·S. Shirotori,K. Kayanuma,I. Souma,Takuro Tomita,Akihiro Murayama,Y. Oka	1
19	Spin injection and spin switching of excitons in coupled quantum wells of diluted magnetic semiconductors 2003 ·Physica B Condensed Matter ·K. Kayanuma,S. Shirotori,(unknown),Takuro Tomita,Akihiro Murayama,Y. Oka	14
20	EXCITONIC PROPERTIES AND DYNAMICS IN DILUTED MAGNETIC SEMICONDUCTOR QUANTUM NANOSTRUCTURES 2002 ·Y. Oka,K. Kayanuma,(unknown),S. Shirotori,Hideki Sakurai,(unknown),I. Souma,Takuya Tomita,(unknown),Akihiro Murayama	2

About S. Shirotori

S. Shirotori is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 29 papers that have together received 331 indexed citations. Recurring topics across this work include Magnetic properties of thin films (19 papers), Ferroelectric and Negative Capacitance Devices (12 papers) and Advanced Memory and Neural Computing (12 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (256 citations), Electronic, Optical and Magnetic Materials (88 citations) and Condensed Matter Physics (45 citations). S. Shirotori has collaborated with scholars based in Japan. Frequent co-authors include T. Inokuchi, Y. Ohsawa, H. Yoda, Y. Kamiguchi, K. Koi, A. Kurobe, Yushi Kato, M. Ishikawa, N. Shimomura and H. Sugiyama. Their work appears in journals such as Applied Physics Letters, Japanese Journal of Applied Physics and Journal of Magnetism and Magnetic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact