R.S. Mand

412 total citations
22 papers, 301 citations indexed

About

R.S. Mand is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Artificial Intelligence. According to data from OpenAlex, R.S. Mand has authored 22 papers receiving a total of 301 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 2 papers in Artificial Intelligence. Recurrent topics in R.S. Mand's work include Semiconductor Quantum Structures and Devices (19 papers), Semiconductor Lasers and Optical Devices (12 papers) and Photonic and Optical Devices (9 papers). R.S. Mand is often cited by papers focused on Semiconductor Quantum Structures and Devices (19 papers), Semiconductor Lasers and Optical Devices (12 papers) and Photonic and Optical Devices (9 papers). R.S. Mand collaborates with scholars based in Canada, Japan and United States. R.S. Mand's co-authors include J.G. Simmons, G.W. Taylor, J.M. Xu, A. J. SpringThorpe, T. Fukushima, Jennifer L. Guthrie, Jing Xu, M. Ohkubo, Masaru Nakamura and Y. Ashizawa and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

R.S. Mand

20 papers receiving 280 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
R.S. Mand Canada	9	286	232	18	14	10	22	301
C. Lindsey United States	12	329 1.2×	303 1.3×	24 1.3×	5 0.4×	3 0.3×	17	366
M. Mittelstein United States	11	369 1.3×	331 1.4×	45 2.5×	5 0.4×	6 0.6×	28	389
J. Mo rk Denmark	10	374 1.3×	349 1.5×	20 1.1×	9 0.6×	10 1.0×	17	424
J.C. Centanni United States	15	746 2.6×	370 1.6×	8 0.4×	19 1.4×	8 0.8×	41	767
P. Cooke United States	11	298 1.0×	253 1.1×	8 0.4×	4 0.3×	7 0.7×	49	319
D. Delacourt France	11	210 0.7×	292 1.3×	74 4.1×	19 1.4×	11 1.1×	25	317
K.-Y. Liou United States	17	618 2.2×	328 1.4×	18 1.0×	9 0.6×	5 0.5×	60	642
Perrine Berger France	8	262 0.9×	260 1.1×	9 0.5×	14 1.0×	8 0.8×	26	315
K.G. Glogovsky United States	9	257 0.9×	175 0.8×	19 1.1×	7 0.5×	2 0.2×	24	271
N.D. Whitbread United Kingdom	13	510 1.8×	236 1.0×	21 1.2×	5 0.4×	3 0.3×	40	543

Countries citing papers authored by R.S. Mand

Since Specialization

Citations

This map shows the geographic impact of R.S. Mand's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.S. Mand with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.S. Mand more than expected).

Fields of papers citing papers by R.S. Mand

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.S. Mand. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.S. Mand. The network helps show where R.S. Mand may publish in the future.

Co-authorship network of co-authors of R.S. Mand

This figure shows the co-authorship network connecting the top 25 collaborators of R.S. Mand. A scholar is included among the top collaborators of R.S. Mand based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.S. Mand. R.S. Mand is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Guthrie, Jennifer L., et al.. (2002). Beam steering in 980 nm high power laser diodes. 2. 43–44.

Simmons, J.G., et al.. (2002). The bistable field effect transistor (BISFET): a novel optoelectronic switching device. 500–501. 1 indexed citations

Mand, R.S., et al.. (1997). Self-consistent modeling of beam instabilities in 980-nm fiber pump-lasers. IEEE Journal of Quantum Electronics. 33(8). 1384–1395. 21 indexed citations

Xu, J.M., et al.. (1995). Ultra-high differential gain in GaInAs-AlGaInAs quantum wells: experiment and modeling. IEEE Photonics Technology Letters. 7(9). 947–949. 12 indexed citations

Guthrie, Jennifer L., et al.. (1994). Beam instability in 980-nm power lasers: experiment and analysis. IEEE Photonics Technology Letters. 6(12). 1409–1411. 42 indexed citations

Mand, R.S., et al.. (1993). A quantum gate current model. IEEE Transactions on Electron Devices. 40(5). 1022–1024. 5 indexed citations

Simmons, J.G., et al.. (1993). Realization of an n-channel GaAs/AlGaAs bistable transistor (BISFET). IEEE Electron Device Letters. 14(8). 385–387. 2 indexed citations

Simmons, J.G., et al.. (1993). Optical and electrical oscillations in double-heterojunction negative differential resistance devices. IEEE Transactions on Electron Devices. 40(6). 1154–1160. 9 indexed citations

Mand, R.S. & J.G. Simmons. (1991). Demonstration of high performance heterojunction field effect transistor in InAlAs/InGaAs/InAlGaAs/InP material system. Electronics Letters. 27(16). 1453–1454. 1 indexed citations

10.

Bolognesi, C. R., R.S. Mand, & Arthur Boothroyd. (1990). Valley current density activation energy and effective longitudinal optical phonon energy in triple well asymmetric resonant tunneling diode. Applied Physics Letters. 57(6). 575–577. 3 indexed citations

11.

Mand, R.S., S. Eicher, & A. J. SpringThorpe. (1989). High performance of induced-channel heterojunction field-effect transistor (HFET). Electronics Letters. 25(6). 386–387. 10 indexed citations

12.

Mand, R.S. & Masaru Nakamura. (1988). Observation of optical radiation in the negative differential resistance region of optoelectronic triangular barrier switch. Journal of Applied Physics. 63(7). 2440–2442. 2 indexed citations

13.

Taylor, G.W., et al.. (1987). Ledistor—a three-terminal double heterostructure optoelectronic switch. Applied Physics Letters. 50(6). 338–340. 32 indexed citations

14.

Taylor, G.W., et al.. (1987). Electrical switching speed of the double-heterostructure optoelectronic switch. IEEE Transactions on Electron Devices. 34(5). 961–965. 7 indexed citations

15.

Taylor, G.W., et al.. (1986). Optically induced switching in a p-channel double heterostructure optoelectronic switch. Applied Physics Letters. 49(21). 1406–1408. 36 indexed citations

16.

Mand, R.S., Y. Ashizawa, & Masaru Nakamura. (1986). New double heterostructure optoelectronic triangular barrier switch (OETBS). Electronics Letters. 22(18). 952–953. 8 indexed citations

17.

Simmons, J.G., et al.. (1986). Summary Abstract: Double heterostructure optoelectronic switching devices using molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(2). 603–604. 1 indexed citations

18.

Taylor, G.W., et al.. (1986). A new double-heterostructure optoelectronic switching device using molecular-beam epitaxy. Journal of Applied Physics. 59(2). 596–600. 92 indexed citations

19.

Taylor, G.W., et al.. (1985). IIIA-2 a new double heterostructure opto-electronic switch—DOES. IEEE Transactions on Electron Devices. 32(11). 2534–2534. 1 indexed citations

20.

Taylor, G.W., J.G. Simmons, R.S. Mand, & A.Y. Cho. (1985). Dynamic switch logic &#8212; A new concept for digital optical logic using DOES devices. 654–657. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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