R.L. Kuvås

414 total citations
22 papers, 298 citations indexed

About

R.L. Kuvås is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Astronomy and Astrophysics. According to data from OpenAlex, R.L. Kuvås has authored 22 papers receiving a total of 298 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 6 papers in Astronomy and Astrophysics. Recurrent topics in R.L. Kuvås's work include Semiconductor Quantum Structures and Devices (12 papers), Radio Frequency Integrated Circuit Design (8 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). R.L. Kuvås is often cited by papers focused on Semiconductor Quantum Structures and Devices (12 papers), Radio Frequency Integrated Circuit Design (8 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). R.L. Kuvås collaborates with scholars based in United States and Canada. R.L. Kuvås's co-authors include J.A. Higgins, W.E. Schroeder, Christopher N. Dunn, F. H. Eisen, G. D. Robinson and Winfield Hill and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

R.L. Kuvås

20 papers receiving 255 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R.L. Kuvås United States 9 262 159 46 46 37 22 298
W.N. Grant United States 3 354 1.4× 117 0.7× 9 0.2× 40 0.9× 33 0.9× 4 369
H. Takanashi Japan 12 285 1.1× 216 1.4× 29 0.6× 8 0.2× 21 0.6× 28 331
S.Y. Narayan United States 11 440 1.7× 335 2.1× 36 0.8× 12 0.3× 5 0.1× 52 482
J.J. Kleimack 4 390 1.5× 131 0.8× 11 0.2× 9 0.2× 47 1.3× 5 421
J.R. Velebir United States 15 494 1.9× 330 2.1× 78 1.7× 54 1.2× 9 0.2× 35 514
T. Vang United States 10 408 1.6× 238 1.5× 8 0.2× 12 0.3× 17 0.5× 32 416
Arthur D. van Rheenen Norway 11 278 1.1× 161 1.0× 19 0.4× 16 0.3× 5 0.1× 45 333
V. Hurm Germany 15 702 2.7× 238 1.5× 30 0.7× 101 2.2× 7 0.2× 81 729
A. Oosenbrug Switzerland 9 253 1.0× 218 1.4× 136 3.0× 27 0.6× 2 0.1× 18 345
J.R. Biard United States 9 272 1.0× 152 1.0× 25 0.5× 2 0.0× 17 0.5× 26 318

Countries citing papers authored by R.L. Kuvås

Since Specialization
Citations

This map shows the geographic impact of R.L. Kuvås's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.L. Kuvås with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.L. Kuvås more than expected).

Fields of papers citing papers by R.L. Kuvås

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.L. Kuvås. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.L. Kuvås. The network helps show where R.L. Kuvås may publish in the future.

Co-authorship network of co-authors of R.L. Kuvås

This figure shows the co-authorship network connecting the top 25 collaborators of R.L. Kuvås. A scholar is included among the top collaborators of R.L. Kuvås based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.L. Kuvås. R.L. Kuvås is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kuvås, R.L.. (1980). Equivalent circuit model of FET including distributed gate effects. IEEE Transactions on Electron Devices. 27(6). 1193–1195. 28 indexed citations
2.
Higgins, J.A. & R.L. Kuvås. (1980). Analysis and Improvement of Intermodulation Distortion in GaAs Power FET's. IEEE Transactions on Microwave Theory and Techniques. 28(1). 9–17. 29 indexed citations
3.
Higgins, J.A., et al.. (1978). Ion implanted GaAs power FETs. 368–372. 1 indexed citations
4.
Higgins, J.A., et al.. (1978). Low-noise GaAs FET's prepared by ion implantation. IEEE Transactions on Electron Devices. 25(6). 587–596. 27 indexed citations
5.
Kuvås, R.L.. (1978). Carrier transport in the drift region of read-type diodes. IEEE Transactions on Electron Devices. 25(6). 660–666. 2 indexed citations
6.
Higgins, J.A., et al.. (1977). Modeling, fabrication and performance of ion implanted low-noise GaAs FETs. 506–509. 2 indexed citations
7.
Kuvås, R.L., et al.. (1977). Heterojunction IMPATT diodes - Theoretical performance and material development studies. 247–256. 3 indexed citations
8.
Kuvås, R.L.. (1976). Nonlinear noise theory for IMPATT diodes. IEEE Transactions on Electron Devices. 23(4). 395–411. 8 indexed citations
9.
Kuvås, R.L.. (1976). Comparison of high-efficiency GaAs IMPATT designs. Electronics Letters. 12(6). 143–144. 1 indexed citations
10.
Eisen, F. H., et al.. (1976). Investigation of technological problems in GaAs.
11.
Kuvås, R.L. & W.E. Schroeder. (1975). Premature collection mode in IMPATT diodes. IEEE Transactions on Electron Devices. 22(8). 549–558. 24 indexed citations
12.
Kuvås, R.L. & W.E. Schroeder. (1974). Premature collection mode in IMPATT diodes. 134–137. 5 indexed citations
13.
Dunn, Christopher N., et al.. (1974). Preparation of GaAs microwave devices by molecular beam epitaxy. 579–582.
14.
Dunn, Christopher N., et al.. (1974). GaAs IMPATT diodes prepared by molecular beam epitaxy. Applied Physics Letters. 25(4). 224–226. 26 indexed citations
15.
Kuvås, R.L.. (1973). Noise in Single-Frequlency Oscillators and Amplifiers. IEEE Transactions on Microwave Theory and Techniques. 21(3). 127–134. 3 indexed citations
16.
Kuvås, R.L.. (1973). Small-signal noise measure of avalanche diodes. Solid-State Electronics. 16(3). 329–336. 3 indexed citations
17.
Kuvås, R.L.. (1972). Noise in IMPATT diodes: Intrinsic properties. IEEE Transactions on Electron Devices. 19(2). 220–233. 34 indexed citations
18.
Kuvås, R.L., et al.. (1970). Carrier Diffusion in Semiconductor Avalanches. Journal of Applied Physics. 41(7). 3108–3116. 17 indexed citations
19.
Kuvås, R.L., et al.. (1970). Quasistatic Approximation for Semiconductor Avalanches. Journal of Applied Physics. 41(4). 1743–1755. 71 indexed citations
20.
Kuvås, R.L.. (1970). Degradation of the oscillator performance of read diodes due to space-charge and series resistances. Electronics Letters. 6(7). 216–217. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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