Riadh Issaoui

733 total citations
30 papers, 590 citations indexed

About

Riadh Issaoui is a scholar working on Materials Chemistry, Mechanics of Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Riadh Issaoui has authored 30 papers receiving a total of 590 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Materials Chemistry, 22 papers in Mechanics of Materials and 12 papers in Electrical and Electronic Engineering. Recurrent topics in Riadh Issaoui's work include Diamond and Carbon-based Materials Research (30 papers), Metal and Thin Film Mechanics (22 papers) and Semiconductor materials and devices (12 papers). Riadh Issaoui is often cited by papers focused on Diamond and Carbon-based Materials Research (30 papers), Metal and Thin Film Mechanics (22 papers) and Semiconductor materials and devices (12 papers). Riadh Issaoui collaborates with scholars based in France, Japan and United Kingdom. Riadh Issaoui's co-authors include Jocelyn Achard, François Silva, Alexandre Tallaire, A. Gicquel, Ovidiu Brinza, Julien Barjon, Vianney Mille, F. Jomard, H. Schneider and Karine Isoird and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Physical Review B.

In The Last Decade

Riadh Issaoui

29 papers receiving 581 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Riadh Issaoui France 16 558 306 262 92 74 30 590
Vianney Mille France 13 511 0.9× 312 1.0× 192 0.7× 97 1.1× 73 1.0× 26 574
Guoyang Shu China 14 459 0.8× 190 0.6× 188 0.7× 76 0.8× 62 0.8× 36 519
François Jomard France 13 460 0.8× 146 0.5× 261 1.0× 67 0.7× 60 0.8× 22 559
M. Kubovič Germany 14 533 1.0× 278 0.9× 356 1.4× 59 0.6× 33 0.4× 22 555
В. С. Бормашов Russia 12 483 0.9× 143 0.5× 207 0.8× 88 1.0× 46 0.6× 36 611
M.A. Pinault-Thaury France 12 362 0.6× 166 0.5× 178 0.7× 79 0.9× 49 0.7× 27 387
Sergey Savin Russia 15 494 0.9× 198 0.6× 377 1.4× 127 1.4× 68 0.9× 38 785
Sung‐Gi Ri Japan 16 622 1.1× 280 0.9× 408 1.6× 51 0.6× 52 0.7× 38 656
Tomonori Kanai Japan 6 670 1.2× 479 1.6× 337 1.3× 65 0.7× 108 1.5× 8 697
A.I. Rukovishnikov Russia 12 390 0.7× 129 0.4× 218 0.8× 49 0.5× 82 1.1× 45 482

Countries citing papers authored by Riadh Issaoui

Since Specialization
Citations

This map shows the geographic impact of Riadh Issaoui's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Riadh Issaoui with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Riadh Issaoui more than expected).

Fields of papers citing papers by Riadh Issaoui

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Riadh Issaoui. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Riadh Issaoui. The network helps show where Riadh Issaoui may publish in the future.

Co-authorship network of co-authors of Riadh Issaoui

This figure shows the co-authorship network connecting the top 25 collaborators of Riadh Issaoui. A scholar is included among the top collaborators of Riadh Issaoui based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Riadh Issaoui. Riadh Issaoui is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Issaoui, Riadh, et al.. (2025). Nitrogen-vacancy centers in epitaxial laterally overgrown diamond: towards up-scaling of color center-based quantum technologies. SPIRE - Sciences Po Institutional REpository. 5(2). 25201–25201.
2.
Achard, Jocelyn, et al.. (2021). Surface production of negative ions from pulse-biased nitrogen doped diamond within a low-pressure deuterium plasma. Journal of Physics D Applied Physics. 54(43). 435201–435201. 2 indexed citations
3.
Issaoui, Riadh, Ovidiu Brinza, Alexandre Tallaire, et al.. (2021). Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates. Applied Physics Letters. 118(6). 26 indexed citations
4.
Pardanaud, C., C. Martin, Jocelyn Achard, et al.. (2020). Enhancing surface production of negative ions using nitrogen doped\n diamond in a deuterium plasma. arXiv (Cornell University). 8 indexed citations
5.
Bénédic, Fabien, et al.. (2020). Microstructure and biological evaluation of nanocrystalline diamond films deposited on titanium substrates using distributed antenna array microwave system. Diamond and Related Materials. 103. 107700–107700. 4 indexed citations
6.
Issaoui, Riadh, et al.. (2019). Radiative lifetime of boron-bound excitons in diamond. Applied Physics Letters. 114(13). 7 indexed citations
7.
Bénédic, Fabien, et al.. (2019). Investigation of a distributed antenna array microwave system for the three-dimensional low-temperature growth of nanocrystalline diamond films. Diamond and Related Materials. 94. 28–36. 7 indexed citations
8.
Issaoui, Riadh, et al.. (2019). Thick and widened high quality heavily boron doped diamond single crystals synthetized with high oxygen flow under high microwave power regime. Diamond and Related Materials. 94. 88–91. 14 indexed citations
9.
Pinault-Thaury, M.A., H. Bensalah, Ingrid Stenger, et al.. (2019). Phosphorus-doped (113) CVD diamond: A breakthrough towards bipolar diamond devices. Applied Physics Letters. 114(11). 37 indexed citations
10.
Crawford, Kevin G., et al.. (2018). Performance Enhancement of Al2O3/H-Diamond MOSFETs Utilizing Vacuum Annealing and V2O5 as a Surface Electron Acceptor. IEEE Electron Device Letters. 39(9). 1354–1357. 18 indexed citations
11.
Issaoui, Riadh, Alexandre Tallaire, Vianney Mille, et al.. (2018). Self‐Assembled Silica Nanoparticles for Diamond Nano‐Structuration. physica status solidi (a). 215(22). 2 indexed citations
12.
Issaoui, Riadh, Jocelyn Achard, Alexandre Tallaire, et al.. (2012). Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices. Applied Physics Letters. 100(12). 24 indexed citations
13.
Barjon, Julien, E. Chikoidze, François Jomard, et al.. (2012). Homoepitaxial boron‐doped diamond with very low compensation. physica status solidi (a). 209(9). 1750–1753. 32 indexed citations
14.
Issaoui, Riadh, Jocelyn Achard, François Silva, et al.. (2011). Influence of oxygen addition on the crystal shape of CVD boron doped diamond. physica status solidi (a). 208(9). 2023–2027. 17 indexed citations
15.
Tallaire, Alexandre, Julien Barjon, Ovidiu Brinza, et al.. (2011). Dislocations and impurities introduced from etch-pits at the epitaxial growth resumption of diamond. Diamond and Related Materials. 20(7). 875–881. 31 indexed citations
16.
Barjon, Julien, Thomas Tillocher, Ovidiu Brinza, et al.. (2011). Boron acceptor concentration in diamond from excitonic recombination intensities. Physical Review B. 83(7). 40 indexed citations
17.
Schneider, H., et al.. (2010). CVD diamond Schottky barrier diode, carrying out and characterization. Diamond and Related Materials. 19(7-9). 792–795. 18 indexed citations
18.
Achard, Jocelyn, François Silva, Riadh Issaoui, et al.. (2010). Thick boron doped diamond single crystals for high power electronics. Diamond and Related Materials. 20(2). 145–152. 71 indexed citations
19.
Issaoui, Riadh, Alexandre Tallaire, Vianney Mille, et al.. (2010). Evolution of Diamond Crystal Shape with Boron Concentration during CVD Growth. AIP conference proceedings. 149–153. 1 indexed citations
20.
Tessier, Pierre‐Yves, Riadh Issaoui, Erwann Luais, et al.. (2009). Ionized Physical Vapour Deposition combined with PECVD, for synthesis of carbon–metal nanocomposite thin films. Solid State Sciences. 11(10). 1824–1827. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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