Ri He

1.1k total citations · 1 hit paper
48 papers, 662 citations indexed

About

Ri He is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Ri He has authored 48 papers receiving a total of 662 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Materials Chemistry, 15 papers in Electrical and Electronic Engineering and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Ri He's work include Ferroelectric and Piezoelectric Materials (16 papers), Electronic and Structural Properties of Oxides (14 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). Ri He is often cited by papers focused on Ferroelectric and Piezoelectric Materials (16 papers), Electronic and Structural Properties of Oxides (14 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). Ri He collaborates with scholars based in China, United States and Singapore. Ri He's co-authors include Zhicheng Zhong, Hongyu Wu, Shi Liu, Run‐Wei Li, Houfang Liu, Yi Lu, Fucai Liu, Huali Yang, Wuhong Xue and Zhiming Wang and has published in prestigious journals such as Nature, Science and Physical Review Letters.

In The Last Decade

Ri He

42 papers receiving 655 citations

Hit Papers

Developing fatigue-resistant ferroelectrics using interla... 2024 2026 2025 2024 25 50 75 100
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Developing fatigue-resistant ferroelectrics using interlayer sliding switching
    2024 104 citations Ri He, Zhicheng Zhong et al. Science profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ri He China 14 461 276 166 141 58 48 662
Jianan Deng China 15 407 0.9× 345 1.3× 171 1.0× 178 1.3× 55 0.9× 50 647
Jihyun Kim South Korea 17 553 1.2× 461 1.7× 176 1.1× 76 0.5× 60 1.0× 48 812
Ze Fang China 11 489 1.1× 339 1.2× 211 1.3× 224 1.6× 42 0.7× 22 626
Ji Shi Japan 15 213 0.5× 259 0.9× 132 0.8× 198 1.4× 93 1.6× 65 576
Youngwoo Kwon South Korea 5 720 1.6× 291 1.1× 260 1.6× 107 0.8× 85 1.5× 7 874
Sergei P. Stepanoff United States 12 309 0.7× 345 1.3× 78 0.5× 85 0.6× 43 0.7× 34 562
Xingyao Gao United States 17 376 0.8× 182 0.7× 176 1.1× 374 2.7× 64 1.1× 31 607
Peng Zhou China 15 507 1.1× 243 0.9× 144 0.9× 457 3.2× 84 1.4× 79 743
Tae-Yeon Hwang South Korea 15 349 0.8× 252 0.9× 131 0.8× 266 1.9× 94 1.6× 38 617
János Volk Hungary 16 518 1.1× 407 1.5× 235 1.4× 176 1.2× 107 1.8× 63 746

Countries citing papers authored by Ri He

Since Specialization
Citations

This map shows the geographic impact of Ri He's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ri He with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ri He more than expected).

Fields of papers citing papers by Ri He

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ri He. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ri He. The network helps show where Ri He may publish in the future.

Co-authorship network of co-authors of Ri He

This figure shows the co-authorship network connecting the top 25 collaborators of Ri He. A scholar is included among the top collaborators of Ri He based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ri He. Ri He is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Ruoyu, et al.. (2025). Domain and switching dynamics in antiferroelectric PbZrO3: Machine learning molecular dynamics simulation. SHILAP Revista de lepidopterología. 3(2). 1 indexed citations
2.
Yan, Xingxu, Haoying Sun, Jie Li, et al.. (2025). Atomic-scale imaging of frequency-dependent phonon anisotropy. Nature. 645(8082). 893–899. 1 indexed citations
3.
4.
He, Ri, et al.. (2025). Switching Two-Dimensional Sliding Ferroelectrics by Mechanical Bending. Physical Review Letters. 134(7). 76101–76101. 8 indexed citations
5.
Ma, Xingyue, Ri He, Sergei Prokhorenko, et al.. (2025). Active learning of effective Hamiltonian for super-large-scale atomic structures. npj Computational Materials. 11(1). 8 indexed citations
6.
He, Ri, et al.. (2025). Spontaneous curvature in two-dimensional van der Waals heterostructures. Nature Communications. 16(1). 717–717. 6 indexed citations
7.
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9.
Deng, Junkai, Yang Yang, Ri He, et al.. (2025). Domain-Pair Intertwined Topological Domain Structures in Elemental Bi Monolayer. Physical Review Letters. 135(21). 216802–216802.
10.
Xue, Wuhong, Wenjuan Ci, Ying Guo, et al.. (2025). Emergence of sliding ferroelectricity in naturally parallel-stacked multilayer ReSe2 semiconductor. Nature Communications. 16(1). 6313–6313. 1 indexed citations
11.
He, Ri, et al.. (2025). Anisotropic ferroelectric switching dynamics in multilayer α-In2Se3 from deep potential molecular dynamics. Physical review. B.. 111(22). 2 indexed citations
12.
Shao, Minghao, Houfang Liu, Ri He, et al.. (2024). Programmable Ferroelectricity in Hf0.5Zr0.5O2 Enabled by Oxygen Defect Engineering. Nano Letters. 24(4). 1231–1237. 9 indexed citations
13.
Wu, Hongyu, et al.. (2024). Compositional ordering driven morphotropic phase boundary in ferroelectric solid solutions. Physical review. B.. 110(5). 3 indexed citations
14.
Cao, Xinjian, Xiao Liu, Ri He, et al.. (2024). Microstructure evolution, mechanical properties, and corrosion behavior of in-situ TiC/TC4 composites through Mo addition. Vacuum. 230. 113720–113720. 3 indexed citations
15.
Hu, Benlin, Linping Wang, Jinwei Cao, et al.. (2023). Intrinsically elastic polymer ferroelectric by precise slight cross-linking. Science. 381(6657). 540–544. 82 indexed citations
16.
Shao, Minghao, Yuzhe Yang, Ri He, et al.. (2023). Anomalous Elastic Evolution Induced by Copper Hopping in van der Waals Ferroelectric CuInP2S6. Advanced Electronic Materials. 9(12). 3 indexed citations
17.
Wu, Hongyu, et al.. (2022). Large-scale atomistic simulation of dislocation core structure in face-centered cubic metal with Deep Potential method. Computational Materials Science. 218. 111941–111941. 5 indexed citations
18.
He, Ri, Zengxing Lu, Yi Lu, et al.. (2020). Oxygen vacancy enhanced ferroelectricity in BTO:SRO nanocomposite films. Acta Materialia. 199. 9–18. 26 indexed citations
19.
Wang, Mingtao, et al.. (2018). Grain Refinement by Second Phase Particles under Applied Stress in ZK60 Mg Alloy with Y through Phase Field Simulation. Materials. 11(10). 1903–1903. 12 indexed citations
20.
Wang, Mingtao, et al.. (2016). A phase field model to simulate competitive precipitation of Mg2Sn along the basal or pyramidal habit planes in Mg-2.2Sn-0.1Zn alloy. Computational Materials Science. 127. 261–269. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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