R. Zhang

498 total citations
14 papers, 427 citations indexed

About

R. Zhang is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, R. Zhang has authored 14 papers receiving a total of 427 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Materials Chemistry, 7 papers in Electrical and Electronic Engineering and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in R. Zhang's work include ZnO doping and properties (7 papers), Ga2O3 and related materials (6 papers) and GaN-based semiconductor devices and materials (5 papers). R. Zhang is often cited by papers focused on ZnO doping and properties (7 papers), Ga2O3 and related materials (6 papers) and GaN-based semiconductor devices and materials (5 papers). R. Zhang collaborates with scholars based in China, Singapore and Japan. R. Zhang's co-authors include Yi Zheng, Shulin Gu, S. M. Zhu, W. Liu, Yi Shi, S.M. Liu, Feng Qin, Xin Zhou, J.D. Ye and Jian Dong Ye and has published in prestigious journals such as Applied Physics Letters, Journal of Materials Science and Journal of Crystal Growth.

In The Last Decade

R. Zhang

14 papers receiving 412 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Zhang China 9 373 211 171 48 47 14 427
An-Jen Cheng United States 10 319 0.9× 208 1.0× 152 0.9× 68 1.4× 56 1.2× 15 410
C. B. Samantaray South Korea 9 345 0.9× 196 0.9× 134 0.8× 30 0.6× 19 0.4× 21 419
Pengshou Xu China 11 348 0.9× 223 1.1× 148 0.9× 63 1.3× 50 1.1× 66 459
Marianne C. Tarun United States 11 522 1.4× 324 1.5× 229 1.3× 32 0.7× 44 0.9× 18 595
Sebastian Wicklein Germany 7 394 1.1× 223 1.1× 206 1.2× 44 0.9× 14 0.3× 10 445
Wen Ma United States 9 455 1.2× 155 0.7× 213 1.2× 37 0.8× 86 1.8× 13 550
Shunming Zhu China 15 567 1.5× 345 1.6× 304 1.8× 43 0.9× 36 0.8× 48 622
Jian‐Min Zhang China 9 298 0.8× 127 0.6× 74 0.4× 23 0.5× 58 1.2× 14 353
I.A. Kowalik Poland 10 393 1.1× 294 1.4× 168 1.0× 63 1.3× 23 0.5× 34 510
Michaela Sojková Slovakia 12 259 0.7× 205 1.0× 93 0.5× 59 1.2× 23 0.5× 57 379

Countries citing papers authored by R. Zhang

Since Specialization
Citations

This map shows the geographic impact of R. Zhang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Zhang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Zhang more than expected).

Fields of papers citing papers by R. Zhang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Zhang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Zhang. The network helps show where R. Zhang may publish in the future.

Co-authorship network of co-authors of R. Zhang

This figure shows the co-authorship network connecting the top 25 collaborators of R. Zhang. A scholar is included among the top collaborators of R. Zhang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Zhang. R. Zhang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

14 of 14 papers shown
1.
Yuan, Youjin, et al.. (2025). A B,N co-doped carbon nanotube array with anchored MnO2 nanosheets as a flexible cathode for aqueous zinc-ion batteries. New Carbon Materials. 40(1). 200–210. 1 indexed citations
2.
Miao, Xudong, et al.. (2024). Heat-resistant boron Carbonitride with nitrogen-vacancies and oxygen-doping for efficient tetracycline removal: Adsorption characteristics, mechanism and regeneration. Journal of Water Process Engineering. 69. 106643–106643. 3 indexed citations
3.
Hao, Licai, Feng Qin, Yang Shen, et al.. (2021). Nitrogen modulation of boron doping behavior for accessible n-type diamond. APL Materials. 9(8). 27 indexed citations
4.
Hao, Licai, Zhen Chen, Yang Shen, et al.. (2020). Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition. Applied Physics Letters. 117(2). 20 indexed citations
5.
Liu, W., Shulin Gu, Jian Dong Ye, et al.. (2008). High temperature dehydrogenation for realization of nitrogen-doped p-type ZnO. Journal of Crystal Growth. 310(15). 3448–3452. 34 indexed citations
6.
Liu, S.M., Shulin Gu, Jian Dong Ye, et al.. (2008). Room-temperature ferromagnetism in Mn-N Co-doped p-ZnO epilayers by metal-organic chemical vapor deposition. Applied Physics A. 91(3). 535–539. 19 indexed citations
7.
Bi, Zhaoxia, R. Zhang, Z. L. Xie, et al.. (2007). Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium. Journal of Materials Science. 42(15). 6377–6381. 6 indexed citations
8.
Liu, S.M., Shulin Gu, S. M. Zhu, et al.. (2006). Modeling analysis of the MOCVD growth of ZnO film. Journal of Crystal Growth. 299(2). 303–308. 14 indexed citations
9.
Bi, Zhaoxia, Yi Zheng, R. Zhang, et al.. (2004). Dielectric properties of AlN film on Si substrate. Journal of Materials Science Materials in Electronics. 15(5). 317–320. 24 indexed citations
10.
Ye, J.D., Shulin Gu, Feng Qin, et al.. (2004). MOCVD growth and properties of ZnO films using dimethylzinc and oxygen. Applied Physics A. 81(4). 809–812. 50 indexed citations
11.
Liu, Bo, R. Zhang, Zhaoxia Bi, et al.. (2004). Temperature dependence of indium nitride oxidation properties. 73–76. 2 indexed citations
12.
Ye, J.D., Shulin Gu, Feng Qin, et al.. (2004). Correlation between green luminescence and morphology evolution of ZnO films. Applied Physics A. 81(4). 759–762. 211 indexed citations
13.
Bi, Zhaoxia, R. Zhang, Z. L. Xie, et al.. (2004). The growth temperature dependence of In aggregation in two-step MOCVD grown InN films on sapphire. Materials Letters. 58(27-28). 3641–3644. 15 indexed citations
14.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026