R. V. Levin

1.0k total citations
40 papers, 692 citations indexed

About

R. V. Levin is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, R. V. Levin has authored 40 papers receiving a total of 692 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Atomic and Molecular Physics, and Optics, 26 papers in Electrical and Electronic Engineering and 5 papers in Materials Chemistry. Recurrent topics in R. V. Levin's work include Semiconductor Quantum Structures and Devices (25 papers), Advanced Semiconductor Detectors and Materials (16 papers) and Chalcogenide Semiconductor Thin Films (8 papers). R. V. Levin is often cited by papers focused on Semiconductor Quantum Structures and Devices (25 papers), Advanced Semiconductor Detectors and Materials (16 papers) and Chalcogenide Semiconductor Thin Films (8 papers). R. V. Levin collaborates with scholars based in Russia, United States and Mexico. R. V. Levin's co-authors include W. Wulf, Ellis Cohen, William M. Corwin, Fred J. Pollack, A. Jones, Andrew Birrell, John V. Guttag, J. J. Horning, В. П. Хвостиков and S. V. Sorokina and has published in prestigious journals such as Communications of the ACM, Semiconductor Science and Technology and Journal of Solar Energy Engineering.

In The Last Decade

R. V. Levin

27 papers receiving 547 citations

Peers

R. V. Levin
John Linwood Griffin United States
Jason Lee United States
David Aspinall United Kingdom
Marcus Völp Germany
David Chisnall United Kingdom
Steven W. Schlosser United States
Oren Laadan United States
Myrto Arapinis United Kingdom
Mike Hamburg United States
John Linwood Griffin United States
R. V. Levin
Citations per year, relative to R. V. Levin R. V. Levin (= 1×) peers John Linwood Griffin

Countries citing papers authored by R. V. Levin

Since Specialization
Citations

This map shows the geographic impact of R. V. Levin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. V. Levin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. V. Levin more than expected).

Fields of papers citing papers by R. V. Levin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. V. Levin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. V. Levin. The network helps show where R. V. Levin may publish in the future.

Co-authorship network of co-authors of R. V. Levin

This figure shows the co-authorship network connecting the top 25 collaborators of R. V. Levin. A scholar is included among the top collaborators of R. V. Levin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. V. Levin. R. V. Levin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Kalyuzhnyy, N. А., et al.. (2023). Investigation of power IR (850 nm) light-emitting diodes manufacturing by lift-off technique of AlGaAs-GaAs- heterostructure to carrier-substrate. Журнал технической физики. 68(1). 161–161.
3.
Levin, R. V., et al.. (2020). Investigation of the Effect of Doping on Transition Layers of Anisotype GaInAsP and InP Heterostructures Obtained by the Method of MOCVD. Technical Physics Letters. 46(10). 961–963. 2 indexed citations
4.
Levin, R. V., et al.. (2019). On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method. Semiconductors. 53(2). 260–263.
5.
Levin, R. V., et al.. (2019). Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers. Technical Physics. 64(10). 1509–1514.
6.
Mikhaĭlova, M. P., et al.. (2019). Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE. Semiconductors. 53(1). 46–50. 1 indexed citations
7.
Vlasov, A. S., et al.. (2019). Люминесцентные свойства выращенных на InP слоев GaInAsP с градиентом состава по толщине. Письма в журнал технической физики. 45(20). 22–22. 1 indexed citations
8.
Levin, R. V., et al.. (2018). A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy. Technical Physics Letters. 44(12). 1127–1129. 3 indexed citations
9.
Хвостиков, В. П., et al.. (2018). Фотоэлектрические преобразователи лазерного излучения (lambda=1064 нм) на основе GaInAsP/InP. Журнал технической физики. 52(13). 1641–1641. 2 indexed citations
10.
Mikhaĭlova, M. P., et al.. (2018). Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well. Semiconductors. 52(4). 493–496. 1 indexed citations
11.
Levin, R. V., et al.. (2018). New connecting elements for cascade photoelectric converters based on InP. Journal of Physics Conference Series. 993. 12036–12036.
12.
Mamutin, V. V., et al.. (2014). Study of postgrowth processing in the fabrication of quantum-cascade lasers. Semiconductors. 48(8). 1103–1108. 5 indexed citations
13.
Levin, R. V., et al.. (2013). Fabrication and study of p-n structures with crystalline inclusions in the space-charge region. Semiconductors. 47(12). 1652–1655. 1 indexed citations
14.
Levin, R. V., et al.. (2012). Properties of narrow-bandgap (0.3–0.48 eV) A3B5 solid solution epilayers grown by metal-organic chemical vapor deposition. Technical Physics Letters. 38(5). 409–411. 2 indexed citations
15.
Андреев, В. М., et al.. (2009). GaSb Structures with Quantum Dots in Space Charge Region. EU PVSEC. 740–742. 1 indexed citations
16.
Dudelev, V. V., R. V. Levin, В. М. Смирнов, et al.. (2008). Novel materials GaInAsPSb/GaSb and GaInAsPSb/InAs for room-temperature optoelectronic devices for a 3–5 µm wavelength range (GaInAsPSb/GaSb and GaInAsPSb/InAs for 3–5 µm). Semiconductor Science and Technology. 23(12). 125026–125026. 2 indexed citations
17.
Santailler, Jean‐Louis, et al.. (2006). GaSb Crystals and Wafers for Photovoltaic Devices. Journal of Solar Energy Engineering. 129(3). 304–313. 15 indexed citations
18.
Levin, R. V., et al.. (2006). Properties of the GaSb epitaxial layers obtained by the MOCVD method. Semiconductors. 40(12). 1393–1397. 4 indexed citations
19.
Levin, R. V., Ellis Cohen, William M. Corwin, Fred J. Pollack, & W. Wulf. (1975). Policy/mechanism separation in Hydra. ACM SIGOPS Operating Systems Review. 9(5). 132–140. 107 indexed citations
20.
Wulf, W., Ellis Cohen, William M. Corwin, et al.. (1974). HYDRA. Communications of the ACM. 17(6). 337–345. 325 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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