R. B. Lauer

1.1k total citations
55 papers, 959 citations indexed

About

R. B. Lauer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, R. B. Lauer has authored 55 papers receiving a total of 959 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 33 papers in Atomic and Molecular Physics, and Optics and 9 papers in Materials Chemistry. Recurrent topics in R. B. Lauer's work include Semiconductor Lasers and Optical Devices (38 papers), Photonic and Optical Devices (27 papers) and Semiconductor Quantum Structures and Devices (22 papers). R. B. Lauer is often cited by papers focused on Semiconductor Lasers and Optical Devices (38 papers), Photonic and Optical Devices (27 papers) and Semiconductor Quantum Structures and Devices (22 papers). R. B. Lauer collaborates with scholars based in United States and Ireland. R. B. Lauer's co-authors include C. B. Su, Shaodong Hou, R. E. Aldrich, J. Schlafer, W. Powazinik, R. Olshansky, J. LaCourse, V. Lanzisera, W. Rideout and Amal K. Ghosh and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Solid-State Circuits.

In The Last Decade

R. B. Lauer

52 papers receiving 846 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. B. Lauer United States 18 730 575 272 75 55 55 959
Wolfgang Bludau Germany 11 636 0.9× 439 0.8× 364 1.3× 44 0.6× 37 0.7× 21 877
D. N. Mirlin Russia 17 411 0.6× 610 1.1× 316 1.2× 59 0.8× 37 0.7× 47 849
G.A. Acket Netherlands 14 632 0.9× 426 0.7× 116 0.4× 28 0.4× 18 0.3× 41 770
D. J. Leopold United States 13 630 0.9× 174 0.3× 450 1.7× 35 0.5× 69 1.3× 45 735
S. Sudo Japan 21 894 1.2× 407 0.7× 189 0.7× 26 0.3× 221 4.0× 80 1.1k
Petr G. Zverev Russia 13 513 0.7× 417 0.7× 272 1.0× 49 0.7× 60 1.1× 39 670
H. I. Ralph United Kingdom 16 496 0.7× 668 1.2× 242 0.9× 70 0.9× 11 0.2× 25 841
Margherita Mazzera Italy 20 304 0.4× 685 1.2× 388 1.4× 108 1.4× 135 2.5× 47 1.1k
W. Czaja Switzerland 15 399 0.5× 321 0.6× 315 1.2× 55 0.7× 39 0.7× 47 622
A. Waxman United States 11 402 0.6× 508 0.9× 619 2.3× 50 0.7× 8 0.1× 18 897

Countries citing papers authored by R. B. Lauer

Since Specialization
Citations

This map shows the geographic impact of R. B. Lauer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. B. Lauer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. B. Lauer more than expected).

Fields of papers citing papers by R. B. Lauer

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. B. Lauer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. B. Lauer. The network helps show where R. B. Lauer may publish in the future.

Co-authorship network of co-authors of R. B. Lauer

This figure shows the co-authorship network connecting the top 25 collaborators of R. B. Lauer. A scholar is included among the top collaborators of R. B. Lauer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. B. Lauer. R. B. Lauer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Schlafer, J., et al.. (2002). InGaAsP diode lasers with high intrinsic bandwidth. 204–207.
2.
Lu, Xiaolin, et al.. (1994). Analysis of relative intensity noise in semiconductor lasers and its effect on subcarrier multiplexed lightwave systems. Journal of Lightwave Technology. 12(7). 1159–1166. 6 indexed citations
3.
Schlafer, J., et al.. (1992). Strained InGaAs Fabry-Perot semiconductor laser transmitters for analog modulated subcarrier multiplexed video transmission. Conference on Lasers and Electro-Optics. 1 indexed citations
4.
Lu, Xiaolin, C. B. Su, & R. B. Lauer. (1992). Analysis of noise translation in semiconductor lasers. Conference on Lasers and Electro-Optics. 1 indexed citations
5.
Lauer, R. B., J. Schlafer, W. Rideout, et al.. (1991). The effect of damping on the frequency response of 1.5 µm quantum-well lasers. Conference on Lasers and Electro-Optics. 3 indexed citations
6.
Sharfin, W. F., J. Schlafer, W. Rideout, et al.. (1991). A novel mechanism for nonlinear gain in quantum-well lasers. Conference on Lasers and Electro-Optics. 3 indexed citations
7.
Sharfin, W. F., et al.. (1991). Single-Mode, 980 nm Pump Lasers for Fiber Amplifiers. Optical Amplifiers and Their Applications. WC4–WC4. 1 indexed citations
8.
Holmstrom, R., et al.. (1990). Extremely high-frequency (24 GHz) InGaAsP diode lasers with excellent modulation efficiency. Electronics Letters. 26(21). 1827–1829. 46 indexed citations
9.
10.
Powazinik, W., et al.. (1987). Semiconductor Light Sources Fabricated By Vapor Phase Epitaxial Regrowth. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 723. 94–94. 2 indexed citations
11.
Olshansky, R., et al.. (1986). Low-current 1.3 μm edge-emitting LED for single-mode-fibre subscriber loop applications. Electronics Letters. 22(2). 87–88. 2 indexed citations
12.
Su, C. B., et al.. (1985). 12.5-GHz direct modulation bandwidth of vapor phase regrown 1.3-μm InGaAsP buried heterostructure lasers. Applied Physics Letters. 46(4). 344–346. 28 indexed citations
13.
Lanzisera, V., et al.. (1985). 17 GHz Direct Modulation Bandwidth and Impedance Characteristics of Vapor Phase Regrown 1.3 µm InGaAsP Buried Heterostructure Lasers. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 545. 10–10. 1 indexed citations
14.
Hou, Shaodong, R. B. Lauer, & R. E. Aldrich. (1973). Transport processes of photoinduced carriers in Bi12SiO20. Journal of Applied Physics. 44(6). 2652–2658. 184 indexed citations
15.
Ghosh, Amal K., R. B. Lauer, & R. R. Addiss. (1973). Photoconductivity and Photoluminescence Kinetics Associated with the Luminescence Center in Rutile (TiO2). Physical review. B, Solid state. 8(10). 4842–4848. 17 indexed citations
16.
Lauer, R. B.. (1973). The I.R. photoluminescence emission band in ZnO. Journal of Physics and Chemistry of Solids. 34(2). 249–253. 71 indexed citations
17.
Lauer, R. B. & Ferd Williams. (1971). Vapor growth of graded composition crystals of (Zn, Cd)S and (Zn, Cd)Te. Journal of Crystal Growth. 8(4). 333–336. 6 indexed citations
18.
Lauer, R. B.. (1971). Thermally Stimulated Currents and Luminescence in Bi12SiO20 and Bi12GeO20. Journal of Applied Physics. 42(5). 2147–2149. 53 indexed citations
19.
Lauer, R. B. & Amal K. Ghosh. (1970). RED-ORANGE PHOTOLUMINESCENCE IN TiO2: W. Applied Physics Letters. 16(9). 341–343. 2 indexed citations
20.
Lauer, R. B., et al.. (1966). Growth parameters of doped ZnS crystals. Materials Research Bulletin. 1(3). 185–189. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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