P. Gaßmann

476 total citations
18 papers, 439 citations indexed

About

P. Gaßmann is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, P. Gaßmann has authored 18 papers receiving a total of 439 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in P. Gaßmann's work include Semiconductor materials and devices (11 papers), Ga2O3 and related materials (7 papers) and Catalytic Processes in Materials Science (7 papers). P. Gaßmann is often cited by papers focused on Semiconductor materials and devices (11 papers), Ga2O3 and related materials (7 papers) and Catalytic Processes in Materials Science (7 papers). P. Gaßmann collaborates with scholars based in Germany, Austria and Hong Kong. P. Gaßmann's co-authors include R. Franchy, H. Ibach, Guido Schmitz, Francesco Bartolucci, Valentina Pintus, Shu Kong So and C. Uebing and has published in prestigious journals such as The Journal of Chemical Physics, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

P. Gaßmann

18 papers receiving 434 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Gaßmann Germany 10 312 192 138 116 83 18 439
E. G. Wang China 11 352 1.1× 143 0.7× 111 0.8× 81 0.7× 69 0.8× 18 515
Jiří Sopoušek Czechia 13 273 0.9× 141 0.7× 76 0.6× 68 0.6× 178 2.1× 53 555
Z. Nabi Algeria 12 347 1.1× 182 0.9× 100 0.7× 100 0.9× 38 0.5× 26 458
Adrian Taga Sweden 5 276 0.9× 115 0.6× 74 0.5× 66 0.6× 17 0.2× 5 405
C. J. Fall Switzerland 11 261 0.8× 186 1.0× 210 1.5× 46 0.4× 38 0.5× 17 488
B.J. Kestel United States 9 305 1.0× 64 0.3× 67 0.5× 29 0.3× 55 0.7× 21 405
Mituru Hashimoto Japan 13 241 0.8× 168 0.9× 201 1.5× 177 1.5× 50 0.6× 51 484
G. W. Ownby United States 9 188 0.6× 116 0.6× 101 0.7× 48 0.4× 19 0.2× 15 347
Yiying Ye China 7 402 1.3× 40 0.2× 108 0.8× 92 0.8× 53 0.6× 16 621
Jovica Ivkov Croatia 15 414 1.3× 62 0.3× 152 1.1× 143 1.2× 15 0.2× 58 679

Countries citing papers authored by P. Gaßmann

Since Specialization
Citations

This map shows the geographic impact of P. Gaßmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Gaßmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Gaßmann more than expected).

Fields of papers citing papers by P. Gaßmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Gaßmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Gaßmann. The network helps show where P. Gaßmann may publish in the future.

Co-authorship network of co-authors of P. Gaßmann

This figure shows the co-authorship network connecting the top 25 collaborators of P. Gaßmann. A scholar is included among the top collaborators of P. Gaßmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Gaßmann. P. Gaßmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
2.
Schmitz, Guido, P. Gaßmann, & R. Franchy. (1998). Elemental steps in the growth of thin, amorphous gallium oxide films on CoGa(001). Surface Science. 397(1-3). 339–345. 16 indexed citations
3.
Schmitz, Guido, P. Gaßmann, & R. Franchy. (1998). Adsorption and thermal decomposition of NH3 on NiAl(001) and NiAl(111). Applied Surface Science. 126(1-2). 176–184. 2 indexed citations
4.
Schmitz, Guido, P. Gaßmann, & R. Franchy. (1998). A combined scanning tunneling microscopy and electron energy loss spectroscopy study on the formation of thin, well-ordered β-Ga2O3 films on CoGa(001). Journal of Applied Physics. 83(5). 2533–2538. 61 indexed citations
5.
Franchy, R., et al.. (1997). EELS on ordered chromium compounds formed on multicomponent Fe15%Cr-X(100) alloy surfaces. Applied Surface Science. 119(3-4). 357–362. 1 indexed citations
6.
Franchy, R., Guido Schmitz, P. Gaßmann, & Francesco Bartolucci. (1997). Growth of thin, crystalline oxide, nitride, and oxynitride films on NiAl and CoGa surfaces. Applied Physics A. 65(6). 551–566. 23 indexed citations
7.
Schmitz, Guido, et al.. (1997). Adsorption and reactions of NO on NiAl(111) at 75 K. The Journal of Chemical Physics. 107(18). 7459–7466. 1 indexed citations
8.
Gaßmann, P., Guido Schmitz, & R. Franchy. (1997). Growth of GaN films on CoGa(001): an EELS and AES study. Surface Science. 380(1). L459–L462. 12 indexed citations
9.
Schmitz, Guido, Francesco Bartolucci, P. Gaßmann, & R. Franchy. (1996). Adsorption and reactions of NO on NiAl(001) at 75 K. Surface Science. 352-354. 161–166. 2 indexed citations
10.
Gaßmann, P., et al.. (1996). Elemental steps in the growth of AlN thin films on NiAl upon thermal decomposition of ammonia. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 14(3). 813–818. 10 indexed citations
11.
Franchy, R., et al.. (1996). The interaction of oxygen with Nb(110) at 300, 80 and 20 K. Surface Science. 366(1). 60–70. 47 indexed citations
12.
Gaßmann, P., et al.. (1996). Growth of ultra-thin AlN(0001) films on NiAl(111). Solid State Communications. 97(1). 1–5. 4 indexed citations
13.
Franchy, R., et al.. (1996). The oxidation of the NiAl(111) surface. Applied Surface Science. 93(4). 317–327. 57 indexed citations
14.
Franchy, R., Shu Kong So, & P. Gaßmann. (1996). THE ADSORPTION OF OXYGEN ON Hong NiAl(001) AT 300 K AND 20 K. Surface Review and Letters. 3(05n06). 1909–1917. 3 indexed citations
15.
Bartolucci, Francesco, Guido Schmitz, P. Gaßmann, & R. Franchy. (1996). Preparation and characterization of thin, well-ordered aluminum oxynitride films on NiAl(001). Journal of Applied Physics. 80(11). 6467–6473. 7 indexed citations
16.
Gaßmann, P., Francesco Bartolucci, & R. Franchy. (1995). Formation of thin AlN films on NiAl(001) upon thermal decomposition of ammonia. Journal of Applied Physics. 77(11). 5718–5724. 9 indexed citations
17.
Gaßmann, P., R. Franchy, & H. Ibach. (1994). Investigations on phase transitions within thin Al2O3 layers on NiAl(001) — HREELS on aluminum oxide films. Surface Science. 319(1-2). 95–109. 143 indexed citations
18.
Gaßmann, P., R. Franchy, & H. Ibach. (1993). Preparation of a well ordered aluminum oxide layer on NiAl(001). Journal of Electron Spectroscopy and Related Phenomena. 64-65. 315–320. 36 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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