P. Brosson

443 total citations
39 papers, 338 citations indexed

About

P. Brosson is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Spectroscopy. According to data from OpenAlex, P. Brosson has authored 39 papers receiving a total of 338 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 23 papers in Atomic and Molecular Physics, and Optics and 5 papers in Spectroscopy. Recurrent topics in P. Brosson's work include Semiconductor Lasers and Optical Devices (31 papers), Photonic and Optical Devices (20 papers) and Semiconductor Quantum Structures and Devices (19 papers). P. Brosson is often cited by papers focused on Semiconductor Lasers and Optical Devices (31 papers), Photonic and Optical Devices (20 papers) and Semiconductor Quantum Structures and Devices (19 papers). P. Brosson collaborates with scholars based in France, Brazil and Germany. P. Brosson's co-authors include J. Ripper, Navin B. Patel, D. Leclerc, J. Jacquet, Jean‐Michel Benoit, H. Bissessur, W. W. Rühle, M.‐A. Dupertuis, Walter Hunziker and F. K. Reinhart and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Lightwave Technology.

In The Last Decade

P. Brosson

34 papers receiving 281 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Brosson France 12 326 190 36 7 7 39 338
M. Mittelstein United States 11 369 1.1× 331 1.7× 45 1.3× 2 0.3× 7 1.0× 28 389
D. Leclerc France 11 307 0.9× 142 0.7× 21 0.6× 6 0.9× 10 1.4× 40 335
G.D. Henshall United Kingdom 11 326 1.0× 267 1.4× 50 1.4× 3 0.4× 11 1.6× 26 339
M. Achtenhagen Switzerland 11 298 0.9× 201 1.1× 15 0.4× 2 0.3× 5 0.7× 31 312
C.P. Seltzer United Kingdom 14 420 1.3× 299 1.6× 31 0.9× 2 0.3× 3 0.4× 28 425
A. E. Paul United States 7 174 0.5× 287 1.5× 35 1.0× 3 0.4× 4 0.6× 10 312
S. Knigge Germany 12 328 1.0× 226 1.2× 43 1.2× 4 0.6× 10 1.4× 35 340
T.E. Reynolds United States 10 398 1.2× 253 1.3× 16 0.4× 5 0.7× 20 415
R. O'Dowd Ireland 12 415 1.3× 182 1.0× 14 0.4× 3 0.4× 47 430
M. Vampouille France 8 143 0.4× 186 1.0× 9 0.3× 4 0.6× 11 1.6× 21 214

Countries citing papers authored by P. Brosson

Since Specialization
Citations

This map shows the geographic impact of P. Brosson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Brosson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Brosson more than expected).

Fields of papers citing papers by P. Brosson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Brosson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Brosson. The network helps show where P. Brosson may publish in the future.

Co-authorship network of co-authors of P. Brosson

This figure shows the co-authorship network connecting the top 25 collaborators of P. Brosson. A scholar is included among the top collaborators of P. Brosson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Brosson. P. Brosson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Brosson, P., D. Bayart, P. Doussière, et al.. (2005). Fast (300 ps) polarization insensitive semiconductor optical amplifier switch with low driving current (70 mA). 130–131. 1 indexed citations
2.
Brosson, P.. (2002). Semiconductor lasers and integrated devices. Springer Link (Chiba Institute of Technology). 7. 2–2. 1 indexed citations
3.
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6.
Gailhanou, M., et al.. (2002). Analysis of DBE grown GaInAsP/InP heterostructures for 1.55 mu m lasers. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 14. 668–671.
7.
Brosson, P., et al.. (1998). Modeling of the static and dynamic responses of an integrated laser Mac-Zehnder modulator and comparison with an integrated laser EA modulator. Journal of Lightwave Technology. 16(12). 2407–2418. 11 indexed citations
8.
Brosson, P., et al.. (1996). Design rules for a low-chirp integrated DFB laser with an electroabsorption modulator. IEEE Photonics Technology Letters. 8(8). 998–1000. 14 indexed citations
9.
Sotom, M., et al.. (1995). Penalty-free 2.5 Gbit/s photonic switching usinga semiconductor four-gate-array module. Electronics Letters. 31(6). 487–488. 3 indexed citations
10.
Leclerc, D., P. Brosson, F. Pommereau, et al.. (1995). High-performance semiconductor optical amplifier array for self-aligned packaging using Si V-groove flip-chip technique. IEEE Photonics Technology Letters. 7(5). 476–478. 14 indexed citations
11.
Hunziker, Walter, W. Vogt, H. Melchior, et al.. (1994). Self-aligned Tilted Amplifier Array Packaging using Si V-groove Flip-Chip Technique for Gate Array Applications. Optical Amplifiers and Their Applications. PD4–PD4. 1 indexed citations
12.
Lauer, R. B., J. Schlafer, W. Rideout, et al.. (1991). The effect of damping on the frequency response of 1.5 µm quantum-well lasers. Conference on Lasers and Electro-Optics. 3 indexed citations
13.
Jacquet, J., et al.. (1990). Carrier-induced differential refractive index in GaInAsP-GaInAs separate confinement multiquantum well lasers. IEEE Photonics Technology Letters. 2(9). 620–622. 15 indexed citations
14.
Brosson, P., et al.. (1988). Simple determination of coupling coefficient in DFB waveguide structures. Electronics Letters. 24(16). 990–991. 3 indexed citations
15.
Brosson, P., J. Benoît, A. Joullié, & B. Sermage. (1987). Analysis of threshold current density in 2.2 μm GaInAsSb/GaAlAsSb/GaSb DH lasers. Electronics Letters. 23(8). 417–419. 5 indexed citations
16.
17.
Rühle, W. W. & P. Brosson. (1980). Gain broadening mechanism in various GaAlAs laser structures. Journal of Applied Physics. 51(11). 5949–5953. 4 indexed citations
18.
Patel, Navin B., P. Brosson, & J. Ripper. (1979). Spectral hole burning in GaAs junction lasers. Applied Physics Letters. 34(5). 330–331. 16 indexed citations
19.
Brosson, P., et al.. (1979). Optical repeater using PFM at 1 GHz. IEEE Journal of Quantum Electronics. 15(8). 798–800. 1 indexed citations
20.
Patel, Navin B., J. Ripper, & P. Brosson. (1973). Behavior of threshold current and polarization of stimulated emission of GaAs injection lasers under uniaxial stress. IEEE Journal of Quantum Electronics. 9(2). 338–341. 40 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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