O. L. Alerhand

2.3k total citations · 1 hit paper
22 papers, 1.9k citations indexed

About

O. L. Alerhand is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, O. L. Alerhand has authored 22 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Atomic and Molecular Physics, and Optics, 7 papers in Electrical and Electronic Engineering and 6 papers in Materials Chemistry. Recurrent topics in O. L. Alerhand's work include Surface and Thin Film Phenomena (12 papers), Semiconductor Quantum Structures and Devices (8 papers) and Semiconductor materials and interfaces (5 papers). O. L. Alerhand is often cited by papers focused on Surface and Thin Film Phenomena (12 papers), Semiconductor Quantum Structures and Devices (8 papers) and Semiconductor materials and interfaces (5 papers). O. L. Alerhand collaborates with scholars based in United States. O. L. Alerhand's co-authors include John D. Joannopoulos, Robert D. Meade, David Vanderbilt, A. M. Rappe, K. D. Brommer, E. J. Melé, Robert J. Hamers, J. E. Demuth, A. Nihat Berker and David A. Smith and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Journal of Applied Physics.

In The Last Decade

O. L. Alerhand

22 papers receiving 1.8k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Spontaneous Formation of Stress Domains on Crystal Surfaces

1988 558 citations O. L. Alerhand, David Vanderbilt et al. Physical Review Letters profile →

Peers

O. L. Alerhand

AMPO

EEE

SCF

G.S. Petrich United States

J.P. Reithmaier Germany

J. M. Moison France

K. D. Brommer United States

Toshiro Isu Japan

K. Ohtaka Japan

T. P. Pearsall United States

E. Kapon Switzerland

G.L. Bona Switzerland

Michael C. Wanke United States

G.S. Petrich United States

O. L. Alerhand

1.4k ×0.9

AMPO

1.2k ×1.3

EEE

231 ×0.5

288 ×1.0

SCF

231 ×0.9

Citations per year, relative to O. L. Alerhand O. L. Alerhand (= 1×) peers G.S. Petrich

Countries citing papers authored by O. L. Alerhand

Since Specialization

Citations

This map shows the geographic impact of O. L. Alerhand's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by O. L. Alerhand with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites O. L. Alerhand more than expected).

Fields of papers citing papers by O. L. Alerhand

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by O. L. Alerhand. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by O. L. Alerhand. The network helps show where O. L. Alerhand may publish in the future.

Co-authorship network of co-authors of O. L. Alerhand

This figure shows the co-authorship network connecting the top 25 collaborators of O. L. Alerhand. A scholar is included among the top collaborators of O. L. Alerhand based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with O. L. Alerhand. O. L. Alerhand is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Meade, Robert D., et al.. (1994). Novel applications of photonic band gap materials: Low-loss bends and high Q cavities. Journal of Applied Physics. 75(9). 4753–4755. 229 indexed citations

Meade, Robert D., A. M. Rappe, K. D. Brommer, John D. Joannopoulos, & O. L. Alerhand. (1993). Accurate theoretical analysis of photonic band-gap materials. Physical review. B, Condensed matter. 48(11). 8434–8437. 357 indexed citations

Wang, Jing, T. A. Arias, John D. Joannopoulos, G. W. Turner, & O. L. Alerhand. (1993). Scanning-tunneling-microscopy signatures and chemical identifications of the (110) surface of Si-doped GaAs. Physical review. B, Condensed matter. 47(16). 10326–10334. 23 indexed citations

Kaxiras, Efthimios, et al.. (1992). Theoretical modeling of heteroepitaxial growth initiation. Materials Science and Engineering B. 14(3). 245–253. 2 indexed citations

Alerhand, O. L., Jing Wang, John D. Joannopoulos, Efthimios Kaxiras, & R. S. Becker. (1991). Adsorption of As on stepped Si(100): Resolution of the sublattice-orientation dilemma. Physical review. B, Condensed matter. 44(12). 6534–6537. 32 indexed citations

Alerhand, O. L., et al.. (1991). Growth of As overlayers on vicinal Si(100) surfaces. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 9(4). 2423–2426. 5 indexed citations

Alerhand, O. L., A. Nihat Berker, J. D. Joannopoulos, et al.. (1991). Alerhandet al. Reply. Physical Review Letters. 66(7). 962–962. 22 indexed citations

Kaxiras, Efthimios, O. L. Alerhand, John D. Joannopoulos, & G. W. Turner. (1990). Thermodynamic and kinetic aspects of GaAs growth on Si(100). Superlattices and Microstructures. 8(2). 229–232. 2 indexed citations

Alerhand, O. L., A. Nihat Berker, John D. Joannopoulos, et al.. (1990). Finite-temperature phase diagram of vicinal Si(100) surfaces. Physical Review Letters. 64(20). 2406–2409. 260 indexed citations

10.

Alerhand, O. L., Efthimios Kaxiras, J. D. Joannopoulos, & G. W. Turner. (1989). Model of epitaxial growth of GaAs on Si(100): Nucleation at surface steps. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 7(4). 695–699. 11 indexed citations

11.

Alerhand, O. L., J. D. Joannopoulos, & E. J. Melé. (1989). Thermal amplitudes of surface atoms on Si(111) 2×1 and Si(001) 2×1. Physical review. B, Condensed matter. 39(17). 12622–12629. 19 indexed citations

12.

Vanderbilt, David, O. L. Alerhand, Robert D. Meade, & John D. Joannopoulos. (1989). Elastic stress domains on the Si(100) surface. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 7(4). 1013–1016. 24 indexed citations

13.

Kaxiras, Efthimios, O. L. Alerhand, John D. Joannopoulos, & G. W. Turner. (1989). Microscopic model of heteroepitaxy of GaAs on Si(100). Physical Review Letters. 62(21). 2484–2486. 25 indexed citations

14.

Alerhand, O. L., David Vanderbilt, Robert D. Meade, & John D. Joannopoulos. (1988). Spontaneous Formation of Stress Domains on Crystal Surfaces. Physical Review Letters. 61(17). 1973–1976. 558 indexed citations breakdown →

15.

Alerhand, O. L. & E. J. Melé. (1988). Dispersion and dipole activity of surface phonons on Si(111) 2×1. Physical review. B, Condensed matter. 37(5). 2536–2550. 32 indexed citations

16.

Alerhand, O. L. & E. J. Melé. (1987). Renormalized acoustic branch in the vibrational spectrum of theπ-bonded–chain model of Si(111)21. Physical Review Letters. 59(6). 657–660. 32 indexed citations

17.

Alerhand, O. L., N. J. DiNardo, & E. J. Melé. (1986). Angle dependence of inelastic electron cross sections for parallel-oriented dipole scatterers. Surface Science. 173(2-3). L659–L667. 12 indexed citations

18.

DiVincenzo, David P., O. L. Alerhand, Michael Schlüter, & Jayne Wilkins. (1986). Electronic and Structural Properties of a Twin Boundary in Si. Physical Review Letters. 56(18). 1925–1928. 90 indexed citations

19.

Melé, E. J., Douglas C. Allan, O. L. Alerhand, & David P. DiVincenzo. (1985). Phonons on reconstructed silicon surfaces. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 3(4). 1068–1073. 11 indexed citations

20.

Alerhand, O. L., Douglas C. Allan, & E. J. Melé. (1985). Dipole Activity of Surface Phonons on Si(111)2×1. Physical Review Letters. 55(24). 2700–2703. 53 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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