M.C. Håkansson

621 total citations
22 papers, 525 citations indexed

About

M.C. Håkansson is a scholar working on Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films and Electrical and Electronic Engineering. According to data from OpenAlex, M.C. Håkansson has authored 22 papers receiving a total of 525 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Atomic and Molecular Physics, and Optics, 9 papers in Surfaces, Coatings and Films and 9 papers in Electrical and Electronic Engineering. Recurrent topics in M.C. Håkansson's work include Advanced Chemical Physics Studies (13 papers), Semiconductor Quantum Structures and Devices (9 papers) and Surface and Thin Film Phenomena (8 papers). M.C. Håkansson is often cited by papers focused on Advanced Chemical Physics Studies (13 papers), Semiconductor Quantum Structures and Devices (9 papers) and Surface and Thin Film Phenomena (8 papers). M.C. Håkansson collaborates with scholars based in Sweden, United States and France. M.C. Håkansson's co-authors include J. Kanski, L. Ilver, Louise Olsson, C. B. M. Andersson, U. O. Karlsson, U. O. Karlsson, P. O. Nilsson, J. A. Yarmoff, David K. Shuh and M. Göthelid and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Surface Science.

In The Last Decade

M.C. Håkansson

22 papers receiving 518 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M.C. Håkansson Sweden 11 371 320 208 101 66 22 525
T. Hannappel Germany 14 379 1.0× 318 1.0× 134 0.6× 80 0.8× 48 0.7× 21 488
S. Fukatsu Japan 10 511 1.4× 426 1.3× 280 1.3× 135 1.3× 125 1.9× 16 649
K. Mochizuki Japan 10 285 0.8× 304 0.9× 150 0.7× 35 0.3× 71 1.1× 12 375
T. Nakanisi Japan 11 661 1.8× 652 2.0× 168 0.8× 47 0.5× 119 1.8× 23 767
C. B. M. Andersson Sweden 10 292 0.8× 263 0.8× 158 0.8× 90 0.9× 57 0.9× 11 420
V.G. Kotlyar Russia 11 336 0.9× 114 0.4× 172 0.8× 105 1.0× 72 1.1× 49 454
H. Stanzl Germany 16 340 0.9× 443 1.4× 332 1.6× 36 0.4× 54 0.8× 38 544
T. R. Gow United States 9 137 0.4× 173 0.5× 114 0.5× 27 0.3× 34 0.5× 13 281
W. E. Spicer United States 3 400 1.1× 439 1.4× 102 0.5× 53 0.5× 39 0.6× 3 538
Myron D. Kapetanakis United States 10 161 0.4× 138 0.4× 251 1.2× 37 0.4× 63 1.0× 17 428

Countries citing papers authored by M.C. Håkansson

Since Specialization
Citations

This map shows the geographic impact of M.C. Håkansson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.C. Håkansson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.C. Håkansson more than expected).

Fields of papers citing papers by M.C. Håkansson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.C. Håkansson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.C. Håkansson. The network helps show where M.C. Håkansson may publish in the future.

Co-authorship network of co-authors of M.C. Håkansson

This figure shows the co-authorship network connecting the top 25 collaborators of M.C. Håkansson. A scholar is included among the top collaborators of M.C. Håkansson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.C. Håkansson. M.C. Håkansson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Padova, Paola De, R. Larciprete, C. Quaresima, et al.. (1998). High resolution photoemission study of the surfactant desorption after Sb mediated Ge epitaxy on Si(001). Applied Surface Science. 123-124. 641–645. 4 indexed citations
2.
Lay, G. Le, M. Göthelid, V. Yu. Aristov, et al.. (1997). Adsorption of C60 on Si(111)√3 × √3R(30°)-Ag. Surface Science. 377-379. 1061–1065. 13 indexed citations
3.
Håkansson, M.C., L. S. O. Johansson, C. B. M. Andersson, et al.. (1997). The electronic structure of In- and As-terminated InAs(001) surfaces. Surface Science. 374(1-3). 73–79. 23 indexed citations
4.
Håkansson, M.C., J. Kanski, David K. Shuh, et al.. (1996). Reaction ofI2with the (001) surfaces of GaAs, InAs, and InSb. I. Chemical interaction with the substrate. Physical review. B, Condensed matter. 54(3). 2101–2113. 38 indexed citations
5.
Olsson, Louise, C. B. M. Andersson, M.C. Håkansson, et al.. (1996). Charge Accumulation at InAs Surfaces. Physical Review Letters. 76(19). 3626–3629. 241 indexed citations
6.
Olsson, Louise, L. Ilver, J. Kanski, et al.. (1996). Core level and valence-band studies of the (111)2×2 surfaces of InSb and InAs. Physical review. B, Condensed matter. 53(8). 4734–4740. 42 indexed citations
7.
Andersson, C. B. M., U. O. Karlsson, M.C. Håkansson, et al.. (1996). Surface atomic structure of and studied by core level spectroscopy. Surface Science. 347(1-2). 199–206. 14 indexed citations
8.
Andersson, C. B. M., U. O. Karlsson, M.C. Håkansson, et al.. (1996). Electronic structure of InAs(1¯ 1¯ 1¯)2×2 and InSb(1¯ 1¯ 1¯)2×2 studied by angle-resolved photoelectron spectroscopy. Physical review. B, Condensed matter. 54(3). 1833–1840. 10 indexed citations
9.
Håkansson, M.C., J. Kanski, M. Göthelid, et al.. (1996). Reaction ofI2with the (001) surfaces of GaAs, InAs, and InSb. II. Ordering of the iodine overlayer. Physical review. B, Condensed matter. 54(3). 2114–2120. 11 indexed citations
10.
Simpson, W. C., D.K. Shuh, W. H. Hung, et al.. (1996). Role of surface stoichiometry in the Cl2/GaAs(001) reaction. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 14(3). 1815–1821. 22 indexed citations
11.
Håkansson, M.C., et al.. (1995). Photoemission study of the band gap on cesiated Ge(111)1×1:As. Physical review. B, Condensed matter. 52(16). R11646–R11649. 3 indexed citations
12.
Olsson, Louise, J. Kanski, L. Ilver, et al.. (1995). Surface electronic structure of InSb(100) 4 × 1 studied by angle-resolved photoelectron spectroscopy. Surface Science. 331-333. 1176–1180. 8 indexed citations
13.
Håkansson, M.C., et al.. (1995). A synchrotron photoemission study of the reaction of iodine with GaAs(001). Vacuum. 46(8-10). 1231–1232. 3 indexed citations
14.
Olsson, Louise, L. Ilver, J. Kanski, et al.. (1995). Anomalous quenching of photoemission from bulk states by deposition of Cs on InAs(100). Physical review. B, Condensed matter. 52(3). 1470–1473. 7 indexed citations
15.
Andersson, C. B. M., Louise Olsson, M.C. Håkansson, et al.. (1994). Core level photoemission from (111)-type InAs surfaces. Journal de Physique IV (Proceedings). 4(C9). C9–209. 3 indexed citations
16.
Olsson, Louise, J. Kanski, L. Ilver, et al.. (1994). Surface electronic structure of InSb(1¯ 1¯ 1¯)3×3 studied by angle-resolved photoelectron spectroscopy and scanning tunneling microscopy. Physical review. B, Condensed matter. 50(24). 18172–18178. 13 indexed citations
17.
Andersson, C. B. M., U. O. Karlsson, M.C. Håkansson, et al.. (1994). Sputtered and annealed InAs() : an unreconstructed surface. Surface Science. 307-309. 885–889. 18 indexed citations
18.
Chakarian, V., David K. Shuh, J. A. Yarmoff, M.C. Håkansson, & U. O. Karlsson. (1993). The adsorption of I2 on Si(111)-7 × 7 studied by soft X-ray photoemission. Surface Science. 296(3). 383–392. 33 indexed citations
19.
Håkansson, M.C., et al.. (1992). Dimer formation and electronic structure on the Ge(100)(2 × 1): Sb surface. Surface Science. 278(1-2). L131–L134. 8 indexed citations
20.
Håkansson, M.C., et al.. (1992). Dimer formation and electronic structure on the Ge(100)(2 × 1): Sb surface. Surface Science Letters. 278(1-2). L131–L134. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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