Maxime Forster

514 total citations
25 papers, 414 citations indexed

About

Maxime Forster is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Maxime Forster has authored 25 papers receiving a total of 414 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in Maxime Forster's work include Silicon and Solar Cell Technologies (21 papers), Semiconductor materials and interfaces (14 papers) and Thin-Film Transistor Technologies (10 papers). Maxime Forster is often cited by papers focused on Silicon and Solar Cell Technologies (21 papers), Semiconductor materials and interfaces (14 papers) and Thin-Film Transistor Technologies (10 papers). Maxime Forster collaborates with scholars based in Australia, France and Germany. Maxime Forster's co-authors include Fiacre Rougieux, Erwann Fourmond, A. Cuevas, M. Lemiti, Daniel Macdonald, R. Einhaus, Jan Schmidt, Bianca Lim, J. Kraiem and Andrés Cuevas and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Solar Energy Materials and Solar Cells.

In The Last Decade

Maxime Forster

24 papers receiving 399 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Maxime Forster Australia 15 397 209 70 69 28 25 414
Jeanette Lindroos Finland 12 448 1.1× 173 0.8× 99 1.4× 96 1.4× 27 1.0× 19 492
Y. Veschetti France 12 402 1.0× 197 0.9× 130 1.9× 53 0.8× 18 0.6× 49 430
A. Wolf Germany 10 327 0.8× 142 0.7× 85 1.2× 40 0.6× 14 0.5× 54 344
Jordi Veirman France 13 442 1.1× 194 0.9× 114 1.6× 72 1.0× 15 0.5× 49 462
Sabrina Lohmüller Germany 10 344 0.9× 142 0.7× 68 1.0× 48 0.7× 30 1.1× 34 358
N. Enjalbert France 12 477 1.2× 222 1.1× 114 1.6× 71 1.0× 15 0.5× 52 500
Robert Woehl Germany 11 363 0.9× 166 0.8× 66 0.9× 51 0.7× 11 0.4× 25 373
Pradeep Padhamnath Singapore 12 457 1.2× 230 1.1× 94 1.3× 44 0.6× 17 0.6× 33 473
J. Knobloch Germany 11 512 1.3× 217 1.0× 133 1.9× 90 1.3× 30 1.1× 26 535
Kevin Lauer Germany 10 349 0.9× 172 0.8× 78 1.1× 37 0.5× 10 0.4× 43 366

Countries citing papers authored by Maxime Forster

Since Specialization
Citations

This map shows the geographic impact of Maxime Forster's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Maxime Forster with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Maxime Forster more than expected).

Fields of papers citing papers by Maxime Forster

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Maxime Forster. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Maxime Forster. The network helps show where Maxime Forster may publish in the future.

Co-authorship network of co-authors of Maxime Forster

This figure shows the co-authorship network connecting the top 25 collaborators of Maxime Forster. A scholar is included among the top collaborators of Maxime Forster based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Maxime Forster. Maxime Forster is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rougieux, Fiacre, Christian Samundsett, Kean Chern Fong, et al.. (2015). High efficiency UMG silicon solar cells: impact of compensation on cell parameters. Progress in Photovoltaics Research and Applications. 24(5). 725–734. 19 indexed citations
2.
Wilking, Svenja, Maxime Forster, Axel Herguth, & Giso Hahn. (2015). From simulation to experiment: Understanding BO-regeneration kinetics. Solar Energy Materials and Solar Cells. 142. 87–91. 27 indexed citations
3.
Forster, Maxime, et al.. (2014). Boron Emitter Passivation Process Improvement for High Efficiency Bifacial n-Type Silicon Solar Cells Fabrication. EU PVSEC. 859–862. 1 indexed citations
4.
Schindler, Florian, Maxime Forster, Jonas Schön, et al.. (2014). Towards a unified low-field model for carrier mobilities in crystalline silicon. Solar Energy Materials and Solar Cells. 131. 92–99. 38 indexed citations
5.
Bartel, T., et al.. (2014). Determination of Acceptor Ratio and Iron Concentration in Co-doped Silicon. Energy Procedia. 55. 519–525. 1 indexed citations
6.
Forster, Maxime, et al.. (2013). Compensation engineering for uniform n-type silicon ingots. Solar Energy Materials and Solar Cells. 111. 146–152. 7 indexed citations
7.
Tajima, Michio, Kõji Tanaka, Maxime Forster, Hiroyuki Toyota, & Atsushi Ogura. (2013). Donor-acceptor pair luminescence in B and P compensated Si co-doped with Ga. Journal of Applied Physics. 113(24). 9 indexed citations
8.
Forster, Maxime, J. Degoulange, R. Einhaus, et al.. (2013). P-Type and N-Type CZ Solar Cells made with 100% PhotoSil Silicon: Impact of Boron Concentration. EU PVSEC. 1431–1434. 1 indexed citations
9.
Degoulange, J., et al.. (2013). PhotoSil UMG Silicon: Industrial Evaluation by Multi-c p-Type Ingots and Solar Cells. EU PVSEC. 1435–1438. 5 indexed citations
10.
Forster, Maxime, et al.. (2012). Incomplete Ionization and Carrier Mobility in Compensated p -Type and n-Type Silicon. IEEE Journal of Photovoltaics. 3(1). 108–113. 17 indexed citations
11.
Einhaus, R., J. Kraiem, J. Degoulange, et al.. (2012). 19% efficiency heterojunction solar cells on Cz wafers from non-blended Upgraded Metallurgical Silicon. 3234–3237. 9 indexed citations
12.
Lim, Siew Yee, et al.. (2012). Applications of Photoluminescence Imaging to Dopant and Carrier Concentration Measurements of Silicon Wafers. IEEE Journal of Photovoltaics. 3(2). 649–655. 15 indexed citations
13.
Cuevas, Andrés, Maxime Forster, Fiacre Rougieux, & Daniel Macdonald. (2012). Compensation Engineering for Silicon Solar Cells. Energy Procedia. 15. 67–77. 16 indexed citations
14.
Forster, Maxime, Erwann Fourmond, Fiacre Rougieux, et al.. (2012). Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron. Applied Physics Letters. 100(4). 41 indexed citations
15.
Forster, Maxime, A. Cuevas, Erwann Fourmond, Fiacre Rougieux, & M. Lemiti. (2012). Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon. Journal of Applied Physics. 111(4). 24 indexed citations
16.
Rougieux, Fiacre, Maxime Forster, Daniel Macdonald, et al.. (2011). Recombination Activity and Impact of the Boron–Oxygen-Related Defect in Compensated N-Type Silicon. IEEE Journal of Photovoltaics. 1(1). 54–58. 23 indexed citations
17.
Fourmond, Erwann, et al.. (2011). Electrical properties of boron, phosphorus and gallium co-doped silicon. Energy Procedia. 8. 349–354. 22 indexed citations
18.
Peng, Yong, I. J. Luxmoore, Maxime Forster, A.G. Cullis, & Beverley J. Inkson. (2008). Nanomanipulation and electrical behaviour of a single gold nanowire using in-situ SEM-FIB-nanomanipulators. Journal of Physics Conference Series. 126. 12031–12031. 15 indexed citations
19.
Tilke, A., et al.. (2005). As-doped polysilicon emitters with interfacial oxides and correlation to bipolar device characteristics. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(5). 1877–1882. 1 indexed citations
20.
Forster, Maxime, et al.. (1996). Electroluminescence, photoluminescence, and photocurrent studies of Si/SiGe p-i-n heterostructures. Journal of Applied Physics. 80(5). 3017–3023. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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