M. L. Timmons

794 total citations
83 papers, 624 citations indexed

About

M. L. Timmons is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. L. Timmons has authored 83 papers receiving a total of 624 indexed citations (citations by other indexed papers that have themselves been cited), including 78 papers in Electrical and Electronic Engineering, 64 papers in Atomic and Molecular Physics, and Optics and 17 papers in Materials Chemistry. Recurrent topics in M. L. Timmons's work include Semiconductor Quantum Structures and Devices (49 papers), solar cell performance optimization (31 papers) and Semiconductor materials and interfaces (25 papers). M. L. Timmons is often cited by papers focused on Semiconductor Quantum Structures and Devices (49 papers), solar cell performance optimization (31 papers) and Semiconductor materials and interfaces (25 papers). M. L. Timmons collaborates with scholars based in United States, China and Canada. M. L. Timmons's co-authors include R. Venkatasubramanian, J. B. Posthill, J.A. Hutchby, R. K. Ahrenkiel, Paul Sharps, B. M. Keyes, P.K. Chiang, Glenn S. Solomon, S. V. Hattangady and D. J. Dunlavy and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

M. L. Timmons

77 papers receiving 586 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. L. Timmons United States 15 516 295 203 92 35 83 624
H. Abad United States 8 341 0.7× 254 0.9× 192 0.9× 48 0.5× 41 1.2× 13 473
Hisanao Sato Japan 18 633 1.2× 410 1.4× 312 1.5× 74 0.8× 30 0.9× 71 854
F. Alsina Spain 15 330 0.6× 435 1.5× 282 1.4× 241 2.6× 70 2.0× 43 734
Y. Toudic France 15 333 0.6× 362 1.2× 214 1.1× 89 1.0× 25 0.7× 50 529
T. Shibata Japan 19 772 1.5× 346 1.2× 175 0.9× 50 0.5× 25 0.7× 75 975
Brian A. Ruzicka United States 11 351 0.7× 358 1.2× 437 2.2× 189 2.1× 27 0.8× 14 738
J. Beerens Canada 14 442 0.9× 457 1.5× 151 0.7× 98 1.1× 77 2.2× 57 681
Sukanta Bose India 16 623 1.2× 437 1.5× 253 1.2× 91 1.0× 70 2.0× 57 778
V. Hock Germany 12 294 0.6× 501 1.7× 269 1.3× 56 0.6× 122 3.5× 23 700

Countries citing papers authored by M. L. Timmons

Since Specialization
Citations

This map shows the geographic impact of M. L. Timmons's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. L. Timmons with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. L. Timmons more than expected).

Fields of papers citing papers by M. L. Timmons

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. L. Timmons. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. L. Timmons. The network helps show where M. L. Timmons may publish in the future.

Co-authorship network of co-authors of M. L. Timmons

This figure shows the co-authorship network connecting the top 25 collaborators of M. L. Timmons. A scholar is included among the top collaborators of M. L. Timmons based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. L. Timmons. M. L. Timmons is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Venkatasubramanian, R., D.P. Malta, M. L. Timmons, & J.A. Hutchby. (2002). Physical basis and characteristics of light emission from quantized planar Ge structures. c 17. 429–432.
2.
Venkatasubramanian, R., M. L. Timmons, Paul Sharps, & J.A. Hutchby. (2002). 15.8%-efficient (1-sun, AM1.5G) GaAs solar cell on optical-grade polycrystalline Ge substrate. 177. 691–695. 3 indexed citations
3.
4.
Walters, R. J., et al.. (1998). Radiation response and injection annealing of p+n InGaP solar cells. Solid-State Electronics. 42(9). 1747–1756. 25 indexed citations
5.
Timmons, M. L., et al.. (1996). Development of p-on-n GaInAs TPV devices. AIP conference proceedings. 358. 458–468. 1 indexed citations
6.
Sharps, Paul, M. L. Timmons, R. Venkatasubramanian, et al.. (1995). Thermal photovoltaic cells. AIP conference proceedings. 321. 194–201. 5 indexed citations
7.
Walters, Robert, et al.. (1994). Annealing of irradiated n+p InP buried homojunctions. NASA Technical Reports Server (NASA). 3278. 203–212.
8.
Keyes, B. M., et al.. (1993). Giant recombination centers in Al0.10Ga0.90As grown by metalorganic chemical vapor deposition. Applied Physics Letters. 63(10). 1369–1371. 7 indexed citations
9.
Bachmann, K. J., et al.. (1992). The Growth and Characterization of Al x Ga1 − x As / Ge Heterostructures. Journal of The Electrochemical Society. 139(1). 312–316. 1 indexed citations
10.
Venkatasubramanian, R., M. L. Timmons, T. P. Humphreys, B. M. Keyes, & R. K. Ahrenkiel. (1992). High-quality eutectic-metal-bonded AlGaAs-GaAs thin films on Si substrates. Applied Physics Letters. 60(7). 886–888. 15 indexed citations
11.
Posthill, J. B., D.P. Malta, R. Venkatasubramanian, et al.. (1991). MBE Growth and Characterization of SxGe1−x Multilayer Structures on Si (100) for Use as a Substrate for GaAs Heteroepitaxy. MRS Proceedings. 220. 1 indexed citations
12.
Venkatasubramanian, R., M. L. Timmons, & T.S. Colpitts. (1991). Selective plasma etching of Ge substrates for thin freestanding GaAs-AlGaAs heterostructures. Applied Physics Letters. 59(17). 2153–2155. 5 indexed citations
13.
Solomon, Glenn S., J. B. Posthill, & M. L. Timmons. (1989). Antiphase domain boundary formation in single-crystal chalcopyrite-structure ZnGeAs2 grown on GaAs. Applied Physics Letters. 55(15). 1531–1533. 7 indexed citations
14.
Bachmann, K. J., et al.. (1989). Organometallic chemical vapor deposition of epitaxial ZnGeP2 films on (001) GaP substrates. Journal of Crystal Growth. 94(2). 381–386. 22 indexed citations
15.
Timmons, M. L.. (1988). A high-efficiency, single-junction, back-surface GaAs concentrator solar cell. STIN. 89. 16220. 1 indexed citations
16.
Timmons, M. L. & P.K. Chiang. (1987). Progress with germanium intercell ohmic connections for AlGaAs-GaAs, monolithic cascade solar cells. pvsp. 102–107. 2 indexed citations
17.
Timmons, M. L., et al.. (1987). A single-junction, point-contact, back-surface GaAs concentrator solar cell. Photovoltaic Specialists Conference. 76–80. 2 indexed citations
18.
Timmons, M. L., P.K. Chiang, & S. V. Hattangady. (1986). An alternative Mg precursor for p-type doping of OMVPE grown material. Journal of Crystal Growth. 77(1-3). 37–41. 33 indexed citations
19.
Timmons, M. L., et al.. (1981). AlGaAsSb/GaAsSb cascade solar cells. pvsp. 1289–1293. 1 indexed citations
20.
Timmons, M. L., Colin G. Pitt, & Monroe E. Wall. (1969). Deuteration and tritiation of Δ8 and Δ9-tetrahydrocannabinol the use of trifluoroacetic acid as a convenient labelling reagent. Tetrahedron Letters. 10(36). 3129–3132. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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