Lin Bao

1.7k total citations · 2 hit papers
52 papers, 1.4k citations indexed

About

Lin Bao is a scholar working on Electrical and Electronic Engineering, Artificial Intelligence and Cellular and Molecular Neuroscience. According to data from OpenAlex, Lin Bao has authored 52 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 14 papers in Artificial Intelligence and 12 papers in Cellular and Molecular Neuroscience. Recurrent topics in Lin Bao's work include Advanced Memory and Neural Computing (42 papers), Ferroelectric and Negative Capacitance Devices (23 papers) and Semiconductor materials and devices (12 papers). Lin Bao is often cited by papers focused on Advanced Memory and Neural Computing (42 papers), Ferroelectric and Negative Capacitance Devices (23 papers) and Semiconductor materials and devices (12 papers). Lin Bao collaborates with scholars based in China, United Kingdom and Germany. Lin Bao's co-authors include Ru Huang, Yuchao Yang, Liying Xu, Keqin Liu, Teng Zhang, Caidie Cheng, Bingjie Dang, Zhen Yang, Jiadi Zhu and Rundong Jia and has published in prestigious journals such as Advanced Materials, SHILAP Revista de lepidopterología and Scientific Reports.

In The Last Decade

Lin Bao

43 papers receiving 1.4k citations

Hit Papers

Ion Gated Synaptic Transistors Based on 2D van der Waals ... 2018 2026 2020 2023 2018 2022 100 200 300 400

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Lin Bao China 15 1.3k 459 382 270 251 52 1.4k
Bingjie Dang China 17 1.1k 0.8× 371 0.8× 347 0.9× 201 0.7× 206 0.8× 33 1.2k
Tianqing Wan China 15 1.3k 1.0× 486 1.1× 289 0.8× 255 0.9× 223 0.9× 22 1.4k
Yue Xi China 19 1.3k 1.0× 366 0.8× 303 0.8× 164 0.6× 209 0.8× 57 1.5k
Zhong Sun China 18 1.2k 0.9× 404 0.9× 242 0.6× 196 0.7× 166 0.7× 48 1.4k
Riduan Khaddam-Aljameh Switzerland 8 1.5k 1.1× 340 0.7× 343 0.9× 328 1.2× 152 0.6× 16 1.6k
Adnan Mehonić United Kingdom 20 2.1k 1.6× 808 1.8× 253 0.7× 332 1.2× 342 1.4× 53 2.2k
Jiadi Zhu China 16 1.8k 1.4× 685 1.5× 264 0.7× 473 1.8× 348 1.4× 35 2.1k
S. R. Nandakumar United States 15 1.5k 1.2× 458 1.0× 427 1.1× 294 1.1× 182 0.7× 26 1.6k
Liying Xu China 12 842 0.6× 268 0.6× 298 0.8× 164 0.6× 132 0.5× 24 917
Fabien Alibart France 22 2.0k 1.5× 980 2.1× 303 0.8× 345 1.3× 330 1.3× 63 2.2k

Countries citing papers authored by Lin Bao

Since Specialization
Citations

This map shows the geographic impact of Lin Bao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Lin Bao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Lin Bao more than expected).

Fields of papers citing papers by Lin Bao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Lin Bao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Lin Bao. The network helps show where Lin Bao may publish in the future.

Co-authorship network of co-authors of Lin Bao

This figure shows the co-authorship network connecting the top 25 collaborators of Lin Bao. A scholar is included among the top collaborators of Lin Bao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Lin Bao. Lin Bao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Zongwei, et al.. (2025). Advancing Toward 4F² 1T1R RRAM With Local NAND-gate and Isolation Scheme. IEEE Transactions on Electron Devices. 72(5). 2327–2333. 1 indexed citations
2.
Li, Xin, et al.. (2025). A Review of All-Optical Pattern Matching Systems. Photonics. 12(12). 1166–1166.
3.
Wang, Shiqing, Lin Bao, Zongwei Wang, et al.. (2025). Precise and scalable analogue matrix equation solving using resistive random-access memory chips. Nature Electronics. 8(12). 1222–1233.
4.
Liu, Keqin, Lin Bao, Yang Yang, et al.. (2025). A dual‐ferroelectric gate‐tunable memristor for physically‐implemented nonlinear computing. InfoMat. 8(1). 1 indexed citations
5.
Bao, Lin, et al.. (2025). High Density and High Reliability (H 2 DR) RRAM for Advanced Memory Technology. 1–3. 1 indexed citations
6.
Wang, Zongwei, et al.. (2025). Design Technology Co-Optimization of High-Density RRAM Array for Advanced CMOS Technology Node. IEEE Transactions on Electron Devices. 72(5). 2278–2284.
7.
Dong, Junchen, Dedong Han, Lin Bao, et al.. (2025). Oxygen Plasma Treatment-Improved Source/Drain Contact Property for Achieving High-Performance ZnO Transistors. IEEE Electron Device Letters. 46(5). 757–760.
9.
Wang, Zongwei, Lin Bao, Zhizhen Yu, et al.. (2024). Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network. Science China Information Sciences. 67(2). 2 indexed citations
10.
Ban, Chaoyi, He Ma, Lin Bao, et al.. (2024). Monolithically 3D Integrated Memristive Bayesian Neural Network for Intelligent Motion Planning. 1–4. 1 indexed citations
11.
Gu, Huajun, Zongwei Wang, Jinshan Li, et al.. (2024). Invited Paper: Design of an RRAM In-Memory Computing Scheme for Target Tracking Applications. 196–199.
13.
Wang, Zongwei, et al.. (2024). An isolated symmetrical 2T2R cell enabling high precision and high density for RRAM-based in-memory computing. Science China Information Sciences. 67(5). 6 indexed citations
14.
Zhang, Hao, Lin Bao, Haisu Zhang, et al.. (2024). Amorphous InAIZnO-based 2T0C Unit for Peak Signal Detection. 92–93.
15.
Wang, Zongwei, Yunfan Yang, Lin Bao, et al.. (2023). A High-Speed True Random Number Generator Based on Unified Selector-RRAM. IEEE Electron Device Letters. 44(12). 1967–1970. 4 indexed citations
16.
Wang, Zongwei, Jian Kang, Guofang Zhong, et al.. (2020). Self-Selective Resistive Device With Hybrid Switching Mode for Passive Crossbar Memory Application. IEEE Electron Device Letters. 41(7). 1009–1012. 39 indexed citations
17.
Wang, Zongwei, Qilin Zheng, Jian Kang, et al.. (2020). Self-Activation Neural Network Based on Self-Selective Memory Device With Rectified Multilevel States. IEEE Transactions on Electron Devices. 67(10). 4166–4171. 23 indexed citations
18.
Bao, Lin, Zongwei Wang, Bowen Wang, et al.. (2020). Tunable Stochastic Oscillator Based on Hybrid VO₂/TaOₓ Device for Compressed Sensing. IEEE Electron Device Letters. 42(1). 102–105. 17 indexed citations
19.
Bao, Lin, Zongwei Wang, Zhizhen Yu, et al.. (2020). Adaptive Random Number Generator Based on RRAM Intrinsic Fluctuation for Reinforcement Learning. 64–65. 2 indexed citations
20.
Dang, Bingjie, Jing Sun, Teng Zhang, et al.. (2019). Physically Transient True Random Number Generators Based on Paired Threshold Switches Enabling Monte Carlo Method Applications. IEEE Electron Device Letters. 40(7). 1096–1099. 31 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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