Jiro Ushio

815 total citations
35 papers, 553 citations indexed

About

Jiro Ushio is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Jiro Ushio has authored 35 papers receiving a total of 553 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 12 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Jiro Ushio's work include Semiconductor materials and devices (20 papers), Copper Interconnects and Reliability (6 papers) and Advanced Chemical Physics Studies (6 papers). Jiro Ushio is often cited by papers focused on Semiconductor materials and devices (20 papers), Copper Interconnects and Reliability (6 papers) and Advanced Chemical Physics Studies (6 papers). Jiro Ushio collaborates with scholars based in Japan, Canada and Hungary. Jiro Ushio's co-authors include Takuya Maruizumi, Keiko Kushida-Abdelghafar, Hiroshi Nakatsuji, T. Yonezawa, Dennis R. Salahub, Imre Pápai, Teijiro Yonezawa, Eiichi Murakami, Alain St‐Amant and Masanobu Miyao and has published in prestigious journals such as Journal of the American Chemical Society, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

Jiro Ushio

35 papers receiving 538 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jiro Ushio Japan 14 317 137 129 119 80 35 553
D. A. Bohling United States 15 426 1.3× 283 2.1× 87 0.7× 164 1.4× 89 1.1× 38 605
G. Constant France 14 151 0.5× 107 0.8× 124 1.0× 151 1.3× 56 0.7× 32 422
Kh.M. Eid Egypt 16 208 0.7× 106 0.8× 111 0.9× 491 4.1× 72 0.9× 44 655
Peter G. Gordon Hungary 14 242 0.8× 43 0.3× 62 0.5× 184 1.5× 70 0.9× 44 499
Udo Dörfler Germany 16 116 0.4× 127 0.9× 271 2.1× 314 2.6× 61 0.8× 42 691
В. В. Баковец Russia 12 174 0.5× 41 0.3× 108 0.8× 274 2.3× 75 0.9× 64 443
Carol R. Jones United States 10 154 0.5× 77 0.6× 255 2.0× 119 1.0× 96 1.2× 18 634
B. Birkmann Germany 11 233 0.7× 86 0.6× 284 2.2× 117 1.0× 42 0.5× 29 607
S. Anjaneyulu India 12 106 0.3× 68 0.5× 236 1.8× 125 1.1× 37 0.5× 18 449
F. Hirsch Germany 10 148 0.5× 56 0.4× 136 1.1× 218 1.8× 58 0.7× 18 507

Countries citing papers authored by Jiro Ushio

Since Specialization
Citations

This map shows the geographic impact of Jiro Ushio's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jiro Ushio with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jiro Ushio more than expected).

Fields of papers citing papers by Jiro Ushio

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jiro Ushio. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jiro Ushio. The network helps show where Jiro Ushio may publish in the future.

Co-authorship network of co-authors of Jiro Ushio

This figure shows the co-authorship network connecting the top 25 collaborators of Jiro Ushio. A scholar is included among the top collaborators of Jiro Ushio based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jiro Ushio. Jiro Ushio is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sawano, Kentarou, et al.. (2013). Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method. Journal of Physics Conference Series. 417. 12008–12008. 1 indexed citations
2.
Sugawa, Shigetoshi, et al.. (2008). 窒素-水素ラジカルを用いて形成した窒化ケイ素膜とSi 3 N 4 /Si界面の構造に関する角度分解光電子研究. Journal of Applied Physics. 104(11). 114112. 1 indexed citations
3.
Sugawa, Shigetoshi, Eiji Ikenaga, Jiro Ushio, et al.. (2007). Subnitride and valence band offset at Si3N4∕Si interface formed using nitrogen-hydrogen radicals. Applied Physics Letters. 90(12). 13 indexed citations
4.
Ushio, Jiro, Takahisa Ohno, Tomoyuki Hamada, et al.. (2007). Ultraviolet-Curing Mechanism of Porous-SiOC. Japanese Journal of Applied Physics. 46(5L). L405–L405. 15 indexed citations
5.
Ushio, Jiro, Tomoyuki Hamada, Takahisa Ohno, et al.. (2006). Structures and Properties of an Ultra-Low-k Material: Classical-molecular-dynamics and First-principles Calculations. MRS Proceedings. 914. 3 indexed citations
6.
Ushio, Jiro, et al.. (2003). The role of hydrogen migration in negative-bias temperature instability. Applied Surface Science. 216(1-4). 258–263. 3 indexed citations
7.
Ushio, Jiro, Keiko Kushida-Abdelghafar, & Takuya Maruizumi. (2002). Interface structures generated by negative-bias temperature instability in Si/SiO/sub 2/ and Si/SiO/sub x/N/sub y/ interfaces. 158–160. 11 indexed citations
8.
Kushida-Abdelghafar, Keiko, et al.. (2002). Effect of nitrogen at SiO2/Si interface on reliability issues—negative-bias-temperature instability and Fowler–Nordheim-stress degradation. Applied Physics Letters. 81(23). 4362–4364. 54 indexed citations
9.
10.
Ushio, Jiro, et al.. (1999). Calculation of hopping-conduction energy of holes in SiO2 based on molecular orbital theory. Materials Science in Semiconductor Processing. 2(3). 233–238. 1 indexed citations
11.
Ushio, Jiro, Takuya Maruizumi, & Masanobu Miyao. (1999). Incorporation of N into Si/SiO2 interfaces: Molecular orbital calculations to evaluate interface strain and heat of reaction. Applied Physics Letters. 75(5). 680–682. 13 indexed citations
12.
Ushio, Jiro, Kiyokazu Nakagawa, Masanobu Miyao, & Takuya Maruizumi. (1998). Surface Segregation Behaviors of B, Ga, and Sb during Si Molecular Beam Epitaxy: Calculation Using a First-Principles Method. Japanese Journal of Applied Physics. 37(3S). 1320–1320. 1 indexed citations
13.
Pápai, Imre, Jiro Ushio, & Dennis R. Salahub. (1993). Chemisorption of formate and acetate on cluster models of Rh and bimetallic RhSn clusters. Surface Science. 282(3). 262–272. 16 indexed citations
14.
Ushio, Jiro, Imre Pápai, Alain St‐Amant, & Dennis R. Salahub. (1992). Vibrational analysis of formate adsorbed on Ni(110): LCGTO-MCP-LSD study. Surface Science. 262(3). L134–L138. 21 indexed citations
15.
Kira, Mitsuo, Kazuhiko Sato, Hideki Sakurai, et al.. (1991). Chemistry of organosilicon compounds. 282. Ab initio MO study of the reaction of pentacoordinate allylsilicates with aldehydes.. Chemistry Letters. 387–390. 4 indexed citations
16.
Kira, Mitsuo, Kazuhiko Sato, Hideki Sakurai, et al.. (1991). Ab Initio MO Study of the Reaction of Pentacoordinate Allylsilicates with Aldehydes. Chemistry Letters. 20(3). 387–390. 15 indexed citations
17.
Pápai, Imre, Alain St‐Amant, Jiro Ushio, & Dennis R. Salahub. (1990). Calculation of equilibrium geometries and harmonic frequencies by theLCGTO-MCP-local spin density method. International Journal of Quantum Chemistry. 38(S24). 29–39. 30 indexed citations
18.
Nakatsuji, H., et al.. (1983). ChemInform Abstract: AB INITIO ELECTRONIC STRUCTURES AND REACTIVITIES OF METAL CARBENE COMPLEXES (CO)5CR:CHOH AND (CO)4FE:CHOH. Chemischer Informationsdienst. 14(21). 2 indexed citations
19.
Nakatsuji, Hiroshi, et al.. (1983). Ab initio electronic structures and reactivities of metal carbene complexes (CO)5Cr:CHOH and (CO)4Fe:CHOH. Journal of the American Chemical Society. 105(3). 426–434. 54 indexed citations
20.
Nakatsuji, H., Jiro Ushio, Katsuya Kanda, et al.. (1981). Electronic structure of dirhodium tetracarboxylate complexes by the AB initio SCF MO method. Chemical Physics Letters. 79(2). 299–304. 34 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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