Jichao Hu

927 total citations
63 papers, 718 citations indexed

About

Jichao Hu is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Jichao Hu has authored 63 papers receiving a total of 718 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Materials Chemistry, 34 papers in Electrical and Electronic Engineering and 30 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Jichao Hu's work include ZnO doping and properties (23 papers), Ga2O3 and related materials (23 papers) and Silicon Carbide Semiconductor Technologies (18 papers). Jichao Hu is often cited by papers focused on ZnO doping and properties (23 papers), Ga2O3 and related materials (23 papers) and Silicon Carbide Semiconductor Technologies (18 papers). Jichao Hu collaborates with scholars based in China, Sweden and United States. Jichao Hu's co-authors include Renxu Jia, Yuming Zhang, Jianwu Sun, Lei Yuan, Jiangang Yu, Yimen Zhang, Xiao-Yan Tang, Hongpeng Zhang, Linpeng Dong and Lianbi Li and has published in prestigious journals such as SHILAP Revista de lepidopterología, Journal of Applied Physics and Carbon.

In The Last Decade

Jichao Hu

52 papers receiving 692 citations

Peers

Jichao Hu
А. В. Тимофеев Russia
Sin‐Liang Ou Taiwan
Su-Shia Lin Taiwan
Vishal Kumar Chakradhary India
M. Noor‐A‐Alam United States
Federico Baiutti Spain
Edvinas Navickas Austria
Hae-Weon Lee South Korea
Hongzhou Song China
Chia‐Hsun Hsu Taiwan
А. В. Тимофеев Russia
Jichao Hu
Citations per year, relative to Jichao Hu Jichao Hu (= 1×) peers А. В. Тимофеев

Countries citing papers authored by Jichao Hu

Since Specialization
Citations

This map shows the geographic impact of Jichao Hu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jichao Hu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jichao Hu more than expected).

Fields of papers citing papers by Jichao Hu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jichao Hu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jichao Hu. The network helps show where Jichao Hu may publish in the future.

Co-authorship network of co-authors of Jichao Hu

This figure shows the co-authorship network connecting the top 25 collaborators of Jichao Hu. A scholar is included among the top collaborators of Jichao Hu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jichao Hu. Jichao Hu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lan, Yucheng, Bo Peng, Yutian Wang, et al.. (2025). Temperature dependence of deep level positions and capture cross sections in vanadium-doped 4H-SiC. Journal of Applied Physics. 137(17).
2.
Hu, Jichao, Qi Zhang, Yao Li, et al.. (2025). Synthesis and characterization of β-Ga2O3 nanowires on 4H-SiC substrates via Au-catalyzed low-pressure chemical vapor deposition. Journal of Crystal Growth. 668. 128287–128287.
3.
Li, Lianbi, Hao Zhang, Zelong Li, et al.. (2025). Study on self-folding mechanism and photoelectric property of three-dimensional graphene cubic structure. Chemical Physics Letters. 876. 142216–142216.
4.
Hu, Jichao, Kewei Zhang, Xiaodong Yang, et al.. (2024). Effect of growth temperature on properties of β-Ga2O3 films grown on AlN by low-pressure chemical vapor deposition. Journal of Luminescence. 274. 120709–120709. 2 indexed citations
5.
Zhang, Haitao, et al.. (2024). Simulation study on temperature characteristics of AlN/ β-Ga2O3 HEMT. Microelectronics Journal. 152. 106386–106386. 4 indexed citations
6.
Hu, Jichao, Qi Zhang, Xiaomin He, et al.. (2024). Band alignment and electronic structure of β-Ga2O3 (−201) grown on Si- and C-faces of 4H–SiC substrates. Vacuum. 224. 113164–113164. 13 indexed citations
7.
Wang, Xi, Juan Xiong, Hongbin Pu, et al.. (2024). A 4H-SiC n-p-n Phototransistor With On-Line Temperature Monitoring Characteristic. IEEE Transactions on Electron Devices. 71(10). 6299–6306.
8.
Hu, Jichao, Xiaodong Yang, Jiaqi Meng, et al.. (2024). Effects of off-axis angles of 4H-SiC substrates on properties of β-Ga2O3 films grown by low-pressure chemical vapor deposition. Applied Surface Science. 680. 161377–161377. 3 indexed citations
9.
Hu, Jichao, et al.. (2023). The effect of vacancy defects on the electronic characteristics of the β-Ga2O3/AlN interface. Journal of Crystal Growth. 627. 127509–127509. 1 indexed citations
10.
Zhang, Hongpeng, Chengying Chen, Renxu Jia, et al.. (2023). Band Alignment of β-Ga2O3 with BaTiO3, SrTiO3, and Related Composites. ECS Journal of Solid State Science and Technology. 12(8). 85005–85005. 1 indexed citations
11.
Hu, Jichao, Zihan Zhang, Xiaomin He, et al.. (2023). Step flow growth of β-Ga2O3 films on off-axis 4H-SiC substrates by LPCVD. Surfaces and Interfaces. 37. 102732–102732. 14 indexed citations
12.
Hu, Jichao, et al.. (2023). Study of the Bonding Characteristics at β-Ga2O3(201)/4H-SiC(0001) Interfaces from First Principles and Experiment. Crystals. 13(2). 160–160. 6 indexed citations
13.
Peng, Bo, Kai Sun, Jiangang Yu, et al.. (2022). First principles investigation of photoelectric properties of Ga2O3 Doped with group IV elements (Si,Ge,Sn). Materials Today Communications. 34. 105127–105127. 13 indexed citations
14.
Wang, Rong, Lianbi Li, Lei Li, et al.. (2021). Fabrication and characterization of Ge/graphene heterojunction on a flexible polyimide substrate. Materials Letters. 308. 131155–131155. 5 indexed citations
15.
Zhang, Hongpeng, Lei Yuan, Xiao-Yan Tang, et al.. (2020). Influence of Metal Gate Electrodes on Electrical Properties of Atomic-Layer-Deposited Al-Rich HfAlO/Ga2O3 MOSCAPs. IEEE Transactions on Electron Devices. 67(4). 1730–1736. 12 indexed citations
16.
Wang, Xi, et al.. (2020). Hole-transmission enhancement in 4H-silicon carbide light triggered thyristor for low loss *. Semiconductor Science and Technology. 36(2). 25010–25010. 2 indexed citations
17.
Zhang, Hongpeng, Lei Yuan, Xiao-Yan Tang, et al.. (2019). Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs. IEEE Transactions on Power Electronics. 35(5). 5157–5179. 156 indexed citations
18.
Li, Lianbi, et al.. (2019). Fabrication and characterization of SiC/Ge/graphene heterojunction with Ge micro-nano structures. Nanotechnology. 31(14). 145202–145202. 4 indexed citations
19.
Zhang, Hongpeng, Lei Yuan, Renxu Jia, et al.. (2019). Stress-induced charge trapping and electrical properties of atomic-layer-deposited HfAlO/Ga 2 O 3 metal–oxide–semiconductor capacitors. Journal of Physics D Applied Physics. 52(21). 215104–215104. 15 indexed citations
20.
Chen, Yang, Zhiming Chen, Lianbi Li, et al.. (2011). The 4:5 Si-to-SiC atomic lattice matching interfaces in the system of Si(111) heteroepitaxially grown on 6H-SiC(001) substrates. Solid State Communications. 152(2). 68–70. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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