James R. Ehrstein

1.1k total citations
19 papers, 778 citations indexed

About

James R. Ehrstein is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, James R. Ehrstein has authored 19 papers receiving a total of 778 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in James R. Ehrstein's work include Semiconductor materials and devices (10 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers) and Electronic and Structural Properties of Oxides (5 papers). James R. Ehrstein is often cited by papers focused on Semiconductor materials and devices (10 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers) and Electronic and Structural Properties of Oxides (5 papers). James R. Ehrstein collaborates with scholars based in United States, Belgium and Brazil. James R. Ehrstein's co-authors include Nhan V. Nguyen, Igor Levin, Şafak Sayan, Eric Garfunkel, Luigi Colombo, Douglas Yoder, Manuel Quevedo-López, Özgür Çelık, M. R. Visokay and Daniel A. Fischer and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

James R. Ehrstein

16 papers receiving 752 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
James R. Ehrstein United States 7 544 389 129 120 117 19 778
Marion Kelsch Germany 17 539 1.0× 371 1.0× 199 1.5× 121 1.0× 151 1.3× 38 867
Douglas Yoder United States 5 231 0.4× 249 0.6× 78 0.6× 100 0.8× 105 0.9× 7 497
Magali Putero France 16 474 0.9× 384 1.0× 250 1.9× 112 0.9× 202 1.7× 53 705
Konrad Jarausch United States 11 526 1.0× 395 1.0× 132 1.0× 205 1.7× 137 1.2× 24 871
Karol Végsö Slovakia 16 386 0.7× 379 1.0× 85 0.7× 127 1.1× 140 1.2× 74 697
Sung Keun Lim South Korea 15 302 0.6× 429 1.1× 174 1.3× 182 1.5× 337 2.9× 33 729
В. А. Лабунов Belarus 16 373 0.7× 631 1.6× 101 0.8× 100 0.8× 380 3.2× 123 882
Kyoung-Ik Cho South Korea 15 514 0.9× 563 1.4× 141 1.1× 68 0.6× 221 1.9× 58 864
Shin‐ichi Honda Japan 16 351 0.6× 723 1.9× 221 1.7× 81 0.7× 260 2.2× 78 965
Satyendra Kumar India 12 692 1.3× 858 2.2× 60 0.5× 186 1.6× 202 1.7× 25 997

Countries citing papers authored by James R. Ehrstein

Since Specialization
Citations

This map shows the geographic impact of James R. Ehrstein's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by James R. Ehrstein with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites James R. Ehrstein more than expected).

Fields of papers citing papers by James R. Ehrstein

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by James R. Ehrstein. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by James R. Ehrstein. The network helps show where James R. Ehrstein may publish in the future.

Co-authorship network of co-authors of James R. Ehrstein

This figure shows the co-authorship network connecting the top 25 collaborators of James R. Ehrstein. A scholar is included among the top collaborators of James R. Ehrstein based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with James R. Ehrstein. James R. Ehrstein is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Sayan, Şafak, et al.. (2008). High sensitivity attenuated total reflection Fourier transform infrared spectroscopy study of ultrathin ZrO2 films: A study of phase change. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 26(2). 270–273. 1 indexed citations
2.
Sayan, Şafak, Nhan V. Nguyen, James R. Ehrstein, et al.. (2005). Effect of nitrogen on band alignment in HfSiON gate dielectrics. Applied Physics Letters. 87(21). 395 indexed citations
3.
Sayan, Şafak, Nhan V. Nguyen, James R. Ehrstein, et al.. (2005). Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon. Applied Physics Letters. 86(15). 92 indexed citations
4.
Nguyen, Nhan V., Şafak Sayan, Igor Levin, et al.. (2005). Optical band gaps and composition dependence of hafnium–aluminate thin films grown by atomic layer chemical vapor deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 23(6). 1706–1713. 54 indexed citations
5.
Ehrstein, James R., Curt A. Richter, D. Chandler‐Horowitz, et al.. (2005). A Comparison of Thickness Values for Very Thin SiO[sub 2] Films by Using Ellipsometric, Capacitance-Voltage, and HRTEM Measurements. Journal of The Electrochemical Society. 153(1). F12–F12. 6 indexed citations
6.
Lin, Yi, Ragesh Puthenkovilakam, Jane P. Chang, et al.. (2003). Interfacial properties of ZrO2 on silicon. Journal of Applied Physics. 93(10). 5945–5952. 55 indexed citations
7.
Ehrstein, James R.. (2003). Thickness Evaluation for 2nm SiO2 Films, a Comparison of Ellipsometric, Capacitance-Voltage and HRTEM Measurements. AIP conference proceedings. 683. 331–336. 5 indexed citations
8.
9.
Diebold, Alain C., Jesse D. Canterbury, Curt A. Richter, et al.. (2001). Characterization and Production Metrology of Gate Dielectric Films: Optical Models for Oxynitrides and High Dielectric Constant Films. Materials Science in Semiconductor Processing. 4. 2 indexed citations
10.
Ehrstein, James R., et al.. (1998). Thin film ellipsometry metrology. 121–131. 7 indexed citations
11.
Eberhardt, Keith R., et al.. (1998). Semiconductor Measurement Technology: Thin Film Reference Materials Development; Final Report for CRADA CN-1364 | NIST. 1 indexed citations
12.
13.
Thurber, W. R., Jeremiah R. Lowney, Robert D. Larrabee, & James R. Ehrstein. (1991). AC Impedance Method for High‐Resistivity Measurements of Silicon. Journal of The Electrochemical Society. 138(10). 3081–3085. 3 indexed citations
14.
Kopanski, Joseph J., et al.. (1990). Verification of the Relation Between Two‐Probe and Four‐Probe Resistances as Measured on Silicon Wafers. Journal of The Electrochemical Society. 137(12). 3935–3941. 8 indexed citations
15.
Simons, David S., et al.. (1988). Progress Toward a Semiconductor Depth-Profiling Standard. 1 indexed citations
16.
Kang, Songbai, et al.. (1987). Well‐Defined Contacts Produce Accurate Spreading Resistance Measurements. Journal of The Electrochemical Society. 134(11). 2878–2882. 4 indexed citations
17.
Roitman, P., David R. Myers, John Albers, et al.. (1981). IVB-7 direct observation of lateral redistribution profiles of shallow ion implants. IEEE Transactions on Electron Devices. 28(10). 1240–1241.
18.
Ehrstein, James R.. (1980). Spreading Resistance Calibration for Gallium‐ or Aluminum‐Doped Silicon. Journal of The Electrochemical Society. 127(6). 1403–1404.
19.
Ehrstein, James R.. (1974). Semiconductor Measurement Technology: Spreading Resistance Symposium. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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