J. Sone

820 total citations
40 papers, 586 citations indexed

About

J. Sone is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, J. Sone has authored 40 papers receiving a total of 586 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 10 papers in Biomedical Engineering. Recurrent topics in J. Sone's work include Advancements in Semiconductor Devices and Circuit Design (11 papers), Semiconductor materials and devices (11 papers) and Semiconductor Quantum Structures and Devices (9 papers). J. Sone is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (11 papers), Semiconductor materials and devices (11 papers) and Semiconductor Quantum Structures and Devices (9 papers). J. Sone collaborates with scholars based in Japan, Australia and United States. J. Sone's co-authors include Satoshi Ishizaka, Hiroyuki Abé, Tsuneya Ando, Yukinori Ochiai, Taichi Yoshida, T. Baba, Toshitsugu Sakamoto, Jun‐ichi Fujita, Benjamin J. Eggleton and Timothy Malloy and has published in prestigious journals such as Physical review. B, Condensed matter, ACS Nano and Applied Physics Letters.

In The Last Decade

J. Sone

40 papers receiving 567 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Sone Japan	13	284	244	173	130	113	40	586
Fabio Pulizzi United Kingdom	12	247 0.9×	322 1.3×	279 1.6×	62 0.5×	53 0.5×	45	555
Eric R. Evarts United States	9	123 0.4×	150 0.6×	77 0.4×	144 1.1×	55 0.5×	15	380
Muhammad Haider Saudi Arabia	14	416 1.5×	206 0.8×	368 2.1×	142 1.1×	228 2.0×	37	815
A.N. North United Kingdom	10	87 0.3×	83 0.3×	144 0.8×	130 1.0×	19 0.2×	20	427
R. Lavín Chile	10	104 0.4×	296 1.2×	373 2.2×	73 0.6×	38 0.3×	20	528
A. van der Pol Netherlands	12	40 0.1×	154 0.6×	98 0.6×	36 0.3×	45 0.4×	17	431
Yandong He China	14	527 1.9×	89 0.4×	113 0.7×	66 0.5×	80 0.7×	107	656
H. Mártin Argentina	12	237 0.8×	42 0.2×	171 1.0×	53 0.4×	73 0.6×	21	424
Mohammed Lach-hab United States	10	130 0.5×	65 0.3×	316 1.8×	32 0.2×	67 0.6×	20	440
Chi-Hsuan Cheng Taiwan	13	421 1.5×	72 0.3×	291 1.7×	68 0.5×	29 0.3×	40	723

Countries citing papers authored by J. Sone

Since Specialization

Citations

This map shows the geographic impact of J. Sone's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Sone with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Sone more than expected).

Fields of papers citing papers by J. Sone

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Sone. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Sone. The network helps show where J. Sone may publish in the future.

Co-authorship network of co-authors of J. Sone

This figure shows the co-authorship network connecting the top 25 collaborators of J. Sone. A scholar is included among the top collaborators of J. Sone based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Sone. J. Sone is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Kawaura, H., Toshitsugu Sakamoto, T. Baba, et al.. (2002). Transistor operations in 30-nm-gate-length EJ-MOSFETs. 14–15. 2 indexed citations

Kawaura, H., Toshitsugu Sakamoto, T. Baba, et al.. (2000). Transistor characteristics of 14-nm-gate-length EJ-MOSFETs. IEEE Transactions on Electron Devices. 47(4). 856–860. 33 indexed citations

Sakamoto, Toshitsugu, T. Baba, Yukinori Ochiai, et al.. (1998). Transistor operation of 30-nm gate-length EJ-MOSFETs. IEEE Electron Device Letters. 19(3). 74–76. 29 indexed citations

Sone, J., et al.. (1996). 112-GHz collector-up Ge/GaAs heterojunction bipolar transistors with low turn-on voltage. IEEE Transactions on Electron Devices. 43(5). 670–675. 8 indexed citations

Furukawa, Akira, et al.. (1994). Small-sized collector-up Ge/GaAs heterojunction bipolar transistors with high gain, low base resistance, and high f/sub max/. IEEE Electron Device Letters. 15(2). 54–56. 2 indexed citations

Sone, J.. (1992). Electron transport in quantum wires and its device applications. Semiconductor Science and Technology. 7(3B). B210–B214. 9 indexed citations

Sone, J., et al.. (1991). High-Gain Collector-Top Ge/GaAs Heterojunction Bipolar Transistors with a Base Layer Fabricated by Suppressing Ga Atom Diffusion at Ge/GaAs Heterojunctions. Japanese Journal of Applied Physics. 30(8R). 1659–1659. 7 indexed citations

Sone, J., et al.. (1989). Doping properties of Ge on GaAs (100) grown by MBE. Journal of Crystal Growth. 95(1-4). 421–424. 22 indexed citations

Sone, J., Jaw-Shen Tsai, S. Ema, & Hiroyuki Abé. (1985). A 280ps Josephson 4b × 4b parallel multiplier. 220–221. 3 indexed citations

10.

Sone, J., J. S. Tsai, & Hiroyuki Abé. (1985). A 280-ps Josephson 4-bitx4-bit parallel multiplier. IEEE Journal of Solid-State Circuits. 20(5). 1056–1060. 4 indexed citations

11.

Sone, J.. (1985). Turn-on delay analysis of current-injection Josephson logic circuits. Journal of Applied Physics. 57(11). 5028–5035. 3 indexed citations

12.

Sone, J., Taichi Yoshida, & Hiroyuki Abé. (1983). High speed four-bit full adder with resistor coupled Josephson logic. 682–685. 3 indexed citations

13.

Sone, J., Taichi Yoshida, S. Tahara, & Hiroyuki Abé. (1982). Logic delays of 5-μm resistor coupled Josephson logic. Applied Physics Letters. 41(9). 886–888. 15 indexed citations

14.

Sone, J., Taichi Yoshida, S. Tahara, & Hiroyuki Abé. (1982). Resistor coupled Josephson logic full adder circuit. 762–765. 1 indexed citations

15.

Sone, J., Taichi Yoshida, & Hiroyuki Abé. (1982). Resistor coupled Josephson logic. Applied Physics Letters. 40(8). 741–744. 27 indexed citations

16.

Sone, J. & Yuzo Takayama. (1981). K-Band High-Power GaAs FET Amplifiers. IEEE Transactions on Microwave Theory and Techniques. 29(4). 309–313. 5 indexed citations

17.

Sone, J. & Yoichiro Takayama. (1979). Ku- and K-band internally matched high-power GaAs f.e.t. amplifiers. Electronics Letters. 15(18). 562–564. 5 indexed citations

18.

Sone, J., et al.. (1979). 14-GHz band 1 watt GaAs f.e.t. amplifier. Electronics Letters. 15(7). 212–213. 2 indexed citations

19.

Sone, J. & Yuzo Takayama. (1978). A small-signal analytical theory for GaAs field-effect transistors at large drain voltages. IEEE Transactions on Electron Devices. 25(3). 329–337. 7 indexed citations

20.

Sone, J.. (1977). Effect of Spin-Orbit Interaction on the Spin Susceptibility of Small Particles. Journal of the Physical Society of Japan. 42(5). 1457–1462. 31 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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