J. Pouzet

1.1k total citations
43 papers, 939 citations indexed

About

J. Pouzet is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. Pouzet has authored 43 papers receiving a total of 939 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 36 papers in Materials Chemistry and 20 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J. Pouzet's work include Chalcogenide Semiconductor Thin Films (39 papers), Semiconductor materials and interfaces (20 papers) and Quantum Dots Synthesis And Properties (16 papers). J. Pouzet is often cited by papers focused on Chalcogenide Semiconductor Thin Films (39 papers), Semiconductor materials and interfaces (20 papers) and Quantum Dots Synthesis And Properties (16 papers). J. Pouzet collaborates with scholars based in France, Algeria and Morocco. J. Pouzet's co-authors include J.C. Bérnède, Sylvain Marsillac, J. Salardenne, G. Couturier, J. Pinel, Xavier Castel, A. Barreau, P. Lacombe, A. Khelil and M. Morsli and has published in prestigious journals such as Journal of Applied Physics, Journal of Materials Science and Corrosion Science.

In The Last Decade

J. Pouzet

42 papers receiving 898 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Pouzet France 17 810 702 188 63 59 43 939
Raghu N. Bhattacharya United States 15 707 0.9× 818 1.2× 232 1.2× 18 0.3× 55 0.9× 46 983
Jessica M. Owens United States 10 444 0.5× 375 0.5× 53 0.3× 27 0.4× 17 0.3× 21 575
Suhit Ranjan Das Canada 5 420 0.5× 498 0.7× 128 0.7× 16 0.3× 41 0.7× 8 595
K. R. Gunasekhar India 20 1.2k 1.5× 1.2k 1.7× 265 1.4× 59 0.9× 75 1.3× 45 1.3k
Z. G. Wang China 12 332 0.4× 234 0.3× 124 0.7× 29 0.5× 10 0.2× 30 543
A.A. Wronkowska Poland 12 154 0.2× 232 0.3× 120 0.6× 51 0.8× 31 0.5× 38 378
M. Regula Switzerland 9 512 0.6× 303 0.4× 68 0.4× 212 3.4× 41 0.7× 14 625
Mohit Raghuwanshi Germany 16 614 0.8× 557 0.8× 161 0.9× 14 0.2× 54 0.9× 32 737
R. Würz Germany 15 558 0.7× 543 0.8× 149 0.8× 10 0.2× 25 0.4× 27 679
I. Konovalov Germany 14 442 0.5× 539 0.8× 102 0.5× 31 0.5× 48 0.8× 41 636

Countries citing papers authored by J. Pouzet

Since Specialization
Citations

This map shows the geographic impact of J. Pouzet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Pouzet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Pouzet more than expected).

Fields of papers citing papers by J. Pouzet

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Pouzet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Pouzet. The network helps show where J. Pouzet may publish in the future.

Co-authorship network of co-authors of J. Pouzet

This figure shows the co-authorship network connecting the top 25 collaborators of J. Pouzet. A scholar is included among the top collaborators of J. Pouzet based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Pouzet. J. Pouzet is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bérnède, J.C., et al.. (2005). Structural and optical properties of CuAlTe2thin films prepared by RF. sputtering. International Journal of Electronics. 92(8). 445–449. 6 indexed citations
2.
Bérnède, J.C., et al.. (2003). Study of the influence of annealing on the properties of CBD-CdS thin films. Applied Surface Science. 205(1-4). 65–79. 123 indexed citations
3.
Bérnède, J.C., et al.. (2000). New buffer layers, large band gap ternary compounds: CuAlTe2. The European Physical Journal Applied Physics. 10(1). 9–14. 16 indexed citations
4.
5.
Bérnède, J.C., et al.. (1999). Recent studies on photoconductive thin films of binary compounds. Synthetic Metals. 99(1). 45–52. 22 indexed citations
6.
Ouerfelli, J., et al.. (1998). De la nécessité d'une fine couche de nickel pour obtenir des couches minces de MoSe2photoconductrices. The European Physical Journal Applied Physics. 3(2). 135–139. 1 indexed citations
7.
Ouerfelli, J., et al.. (1998). Photoconductive WSe2 thin films obtained by solid state reaction in the presence of a thin nickel layer. Materials Chemistry and Physics. 52(1). 83–88. 11 indexed citations
8.
Marsillac, Sylvain, et al.. (1997). CuAlSe2 Thin Films Obtained by Chalcogenization. Journal de Physique III. 7(11). 2165–2169. 3 indexed citations
9.
Couturier, G., et al.. (1997). MS2 (M = W, Mo) photosensitive thin films for solar cells. Solar Energy Materials and Solar Cells. 46(2). 115–121. 220 indexed citations
10.
Bérnède, J.C., et al.. (1997). Physicochemical characterization of MoS2 films obtained by solid state reaction between the constituents of a multilayer Mo/S…/Mo/S structure. Materials Science and Engineering B. 45(1-3). 9–16. 6 indexed citations
11.
Marsillac, Sylvain, et al.. (1997). Physico-chemical characterization of CuAlSe2 films obtained by reaction, induced by annealing, between Se vapour and Al/Cu/AI…Cu/Al/Cu thin films sequentially deposited. Materials Science and Engineering B. 45(1-3). 69–75. 14 indexed citations
12.
Bérnède, J.C., et al.. (1996). thin films prepared by solid state reaction (induced by annealing) between the constituents in thin film form. Journal of Physics Condensed Matter. 8(14). 2291–2304. 41 indexed citations
13.
Pouzet, J., et al.. (1996). MoS2 thin films obtained by a new technique: Solid state reaction between the constituents in thin film form. Journal of Physics and Chemistry of Solids. 57(9). 1363–1369. 18 indexed citations
14.
Bérnède, J.C., et al.. (1994). Tungsten diselenide thin films synthesized on tungsten foils. Materials Science and Engineering B. 26(1). 67–71. 2 indexed citations
15.
Bérnède, J.C., et al.. (1994). Grain boundary conductivity in different polycrystalline MoSe2 thin films. Journal de Physique III. 4(4). 677–684. 14 indexed citations
16.
Khelil, A., et al.. (1994). WSe2thin-film realization by synthesis and by tarnishing. Journal of Physics Condensed Matter. 6(41). 8527–8537. 9 indexed citations
17.
Bérnède, J.C., et al.. (1993). Optimization of the technique of synthesis of WSe2 thin films by solid state reaction between W and Se thin films. Thin Solid Films. 224(1). 39–45. 18 indexed citations
18.
Bérnède, J.C., et al.. (1991). Physico-chemical characterization of molybdenum dichalcogenide thin films. Materials Chemistry and Physics. 28(4). 347–354. 2 indexed citations
19.
Bérnède, J.C., et al.. (1990). Structural characterization of synthesized molybdenum ditelluride thin films. Materials Research Bulletin. 25(1). 31–42. 13 indexed citations
20.
Pouzet, J., et al.. (1966). Potentiostatic study of structural modifications caused in a Ni-Cr-Fe alloy by heat treatment at 650 °C. Corrosion Science. 6(2). 83–85. 32 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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