J. G. Wilkes

703 total citations
19 papers, 526 citations indexed

About

J. G. Wilkes is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. G. Wilkes has authored 19 papers receiving a total of 526 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J. G. Wilkes's work include Silicon and Solar Cell Technologies (14 papers), Thin-Film Transistor Technologies (9 papers) and Silicon Nanostructures and Photoluminescence (8 papers). J. G. Wilkes is often cited by papers focused on Silicon and Solar Cell Technologies (14 papers), Thin-Film Transistor Technologies (9 papers) and Silicon Nanostructures and Photoluminescence (8 papers). J. G. Wilkes collaborates with scholars based in United Kingdom, India and Germany. J. G. Wilkes's co-authors include M. J. Binns, R. C. Newman, S. Messoloras, R. J. Stewart, P. Capper, E C Lightowlers, W. P. Brown, G. Davies, A. S. Oates and Aled Jones and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

J. G. Wilkes

19 papers receiving 449 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. G. Wilkes United Kingdom	12	464	245	142	45	37	19	526
A. Poudoulec France	11	302 0.7×	53 0.2×	218 1.5×	37 0.8×	56 1.5×	32	414
W.S. Khokle India	10	268 0.6×	98 0.4×	128 0.9×	16 0.4×	67 1.8×	75	391
M. Duseaux France	11	185 0.4×	162 0.7×	176 1.2×	42 0.9×	32 0.9×	12	341
E. Bedel France	14	287 0.6×	133 0.5×	357 2.5×	27 0.6×	69 1.9×	38	463
T. O. Yep United States	12	273 0.6×	90 0.4×	229 1.6×	14 0.3×	39 1.1×	14	376
T. Shioda Japan	9	344 0.7×	223 0.9×	143 1.0×	8 0.2×	29 0.8×	17	430
W. A. Westdorp United States	6	387 0.8×	207 0.8×	139 1.0×	42 0.9×	49 1.3×	7	452
T. Hirai Japan	12	222 0.5×	200 0.8×	64 0.5×	4 0.1×	27 0.7×	28	331
Miklós Serényi Hungary	12	355 0.8×	208 0.8×	152 1.1×	31 0.7×	53 1.4×	58	459
H. Schlötterer Germany	10	385 0.8×	128 0.5×	128 0.9×	25 0.6×	73 2.0×	15	436

Countries citing papers authored by J. G. Wilkes

Since Specialization

Citations

This map shows the geographic impact of J. G. Wilkes's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. G. Wilkes with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. G. Wilkes more than expected).

Fields of papers citing papers by J. G. Wilkes

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. G. Wilkes. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. G. Wilkes. The network helps show where J. G. Wilkes may publish in the future.

Co-authorship network of co-authors of J. G. Wilkes

This figure shows the co-authorship network connecting the top 25 collaborators of J. G. Wilkes. A scholar is included among the top collaborators of J. G. Wilkes based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. G. Wilkes. J. G. Wilkes is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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19 of 19 papers shown

Bains, Santo, et al.. (1990). Oxygen Precipitation in Heavily Doped Silicon. Journal of The Electrochemical Society. 137(2). 647–652. 22 indexed citations

Bergholz, W., M. J. Binns, G. R. Booker, et al.. (1989). A study of oxygen precipitation in silicon using high-resolution transmission electron microscopy, small-angle neutron scattering and infrared absorption. Philosophical Magazine B. 59(5). 499–522. 52 indexed citations

Messoloras, S., et al.. (1989). Neutron reflectivity from a silicon nitride layer on a silicon substrate. Philosophical Magazine Letters. 60(2). 57–65. 1 indexed citations

Messoloras, S., et al.. (1989). Silicon oxide epitaxial films investigated by neutron reflectivity. Journal of Physics D Applied Physics. 22(12). 1862–1869. 4 indexed citations

Wilkes, J. G., et al.. (1989). The plasma oxidation of titanium thin films to form dielectric layers. Journal of Applied Physics. 66(6). 2320–2324. 42 indexed citations

Wilkes, J. G., et al.. (1988). Applications of rapid thermal processing to silicon epitaxy. Semiconductor Science and Technology. 3(5). 442–447. 6 indexed citations

Davies, G., E C Lightowlers, M.F. Thomaz, & J. G. Wilkes. (1988). A metastable precursor to the production of the two-carbon-atom 'G' centre in irradiated crystalline silicon. Semiconductor Science and Technology. 3(6). 608–611. 11 indexed citations

Davies, G., et al.. (1987). Room-temperature irradiation of silicon doped with carbon. Semiconductor Science and Technology. 2(8). 554–557. 11 indexed citations

Davies, G., A. S. Oates, R. C. Newman, et al.. (1986). Carbon-related radiation damage centres in Czochralski silicon. Journal of Physics C Solid State Physics. 19(6). 841–855. 68 indexed citations

10.

Oates, A. S., R.C. Newman, Rosemary Woolley, et al.. (1985). Determination of low levels of carbon in Czochralski silicon. Applied Physics Letters. 47(7). 705–707. 12 indexed citations

11.

Davies, Gordon, et al.. (1984). The production and destruction of the C-related 969 meV absorption band in Si. Solid State Communications. 50(12). 1057–1061. 20 indexed citations

12.

Wilkes, J. G.. (1984). Low pressure processes in chemical vapour deposition of silicon oxides. Journal of Crystal Growth. 70(1-2). 271–279. 8 indexed citations

13.

Messoloras, S., R. C. Newman, R. J. Stewart, et al.. (1984). An infrared and neutron scattering analysis of the precipitation of oxygen in dislocation-free silicon. Journal of Physics C Solid State Physics. 17(34). 6253–6276. 97 indexed citations

14.

Oates, A. S., et al.. (1984). The mechanism of radiation-enhanced diffusion of oxygen in silicon at room temperature. Journal of Physics C Solid State Physics. 17(32). 5695–5705. 30 indexed citations

15.

Binns, M. J., W. P. Brown, J. G. Wilkes, et al.. (1983). Diffusion limited precipitation of oxygen in dislocation-free silicon. Applied Physics Letters. 42(6). 525–527. 33 indexed citations

16.

Wilkes, J. G.. (1983). The precipitation of oxygen in silicon. Journal of Crystal Growth. 65(1-3). 214–230. 12 indexed citations

17.

Newman, R.C., M. J. Binns, W. P. Brown, et al.. (1983). Precipitation of oxygen in silicon kinetics, solubility, diffusivity and particle size. Physica B+C. 116(1-3). 264–270. 25 indexed citations

18.

Capper, P. & J. G. Wilkes. (1978). On the cooling rates of large-diameter silicon crystals. Applied Physics Letters. 32(3). 187–189. 11 indexed citations

19.

Capper, P., et al.. (1977). The effects of heat treatment on dislocation-free oxygen-containing silicon crystals. Journal of Applied Physics. 48(4). 1646–1655. 61 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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