I‐Jhen Lin

499 total citations
6 papers, 438 citations indexed

About

I‐Jhen Lin is a scholar working on Geophysics, Electrical and Electronic Engineering and Artificial Intelligence. According to data from OpenAlex, I‐Jhen Lin has authored 6 papers receiving a total of 438 indexed citations (citations by other indexed papers that have themselves been cited), including 3 papers in Geophysics, 3 papers in Electrical and Electronic Engineering and 1 paper in Artificial Intelligence. Recurrent topics in I‐Jhen Lin's work include Advancements in Semiconductor Devices and Circuit Design (3 papers), High-pressure geophysics and materials (3 papers) and Geological and Geochemical Analysis (3 papers). I‐Jhen Lin is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (3 papers), High-pressure geophysics and materials (3 papers) and Geological and Geochemical Analysis (3 papers). I‐Jhen Lin collaborates with scholars based in Taiwan, China and India. I‐Jhen Lin's co-authors include Sun‐Lin Chung, Fu‐Yuan Wu, Han‐Yi Chiu, Yu-Hsuan Liang, Dunyi Liu, Yoshiyuki Iizuka, Lie‐Wen Xie, Yanbin Wang, Mei‐Fei Chu and Sylvain Gallet and has published in prestigious journals such as Tectonophysics, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

I‐Jhen Lin

6 papers receiving 429 citations

Peers

I‐Jhen Lin
Feng Cong China
I‐Jhen Lin
Citations per year, relative to I‐Jhen Lin I‐Jhen Lin (= 1×) peers Feng Cong

Countries citing papers authored by I‐Jhen Lin

Since Specialization
Citations

This map shows the geographic impact of I‐Jhen Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I‐Jhen Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I‐Jhen Lin more than expected).

Fields of papers citing papers by I‐Jhen Lin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I‐Jhen Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I‐Jhen Lin. The network helps show where I‐Jhen Lin may publish in the future.

Co-authorship network of co-authors of I‐Jhen Lin

This figure shows the co-authorship network connecting the top 25 collaborators of I‐Jhen Lin. A scholar is included among the top collaborators of I‐Jhen Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I‐Jhen Lin. I‐Jhen Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

6 of 6 papers shown
1.
Lin, Te‐Hsien, Sun‐Lin Chung, Anil Kumar, et al.. (2013). Linking a prolonged Neo‐Tethyan magmatic arc in South Asia: Zircon U‐Pb and Hf isotopic constraints from the Lohit Batholith, NE India. Terra Nova. 25(6). 453–458. 49 indexed citations
2.
Lin, I‐Jhen, Sun‐Lin Chung, Hao-Yang Lee, et al.. (2012). Geochemical and Sr–Nd isotopic characteristics of Cretaceous to Paleocene granitoids and volcanic rocks, SE Tibet: Petrogenesis and tectonic implications. Journal of Asian Earth Sciences. 53. 131–150. 69 indexed citations
3.
Chiu, Han‐Yi, Sun‐Lin Chung, Fu‐Yuan Wu, et al.. (2009). Zircon U–Pb and Hf isotopic constraints from eastern Transhimalayan batholiths on the precollisional magmatic and tectonic evolution in southern Tibet. Tectonophysics. 477(1-2). 3–19. 311 indexed citations
4.
Lin, I‐Jhen, et al.. (2008). Analysis of STI-induced mechanical stress-related Kink effect of 40nm PD SOI NMOS devices biased in saturation region. Solid-State Electronics. 52(12). 1884–1888. 4 indexed citations
5.
Kuo, J.B., et al.. (2008). Shallow-Trench-Isolation (STI)-Induced Mechanical-Stress-Related Kink-Effect Behaviors of 40-nm PD SOI NMOS Device. IEEE Transactions on Electron Devices. 55(6). 1558–1562. 2 indexed citations
6.
Lin, I‐Jhen, et al.. (2008). Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect. IEEE Electron Device Letters. 29(6). 612–614. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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