I. V. Grekhov

525 total citations
53 papers, 405 citations indexed

About

I. V. Grekhov is a scholar working on Electrical and Electronic Engineering, Control and Systems Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, I. V. Grekhov has authored 53 papers receiving a total of 405 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 22 papers in Control and Systems Engineering and 19 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in I. V. Grekhov's work include Pulsed Power Technology Applications (21 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Silicon Carbide Semiconductor Technologies (11 papers). I. V. Grekhov is often cited by papers focused on Pulsed Power Technology Applications (21 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Silicon Carbide Semiconductor Technologies (11 papers). I. V. Grekhov collaborates with scholars based in Russia, Netherlands and Germany. I. V. Grekhov's co-authors include G. Mesyats, A.F. Kardo-Sysoev, S.V. Shenderey, S. V. Korotkov, Alexander Kozlov, P. A. Ivanov, A. S. Zubrilov, S.A. Nair, A.J.M. Pemen and А. С. Потапов and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and Review of Scientific Instruments.

In The Last Decade

I. V. Grekhov

52 papers receiving 379 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
I. V. Grekhov Russia	9	283	263	171	64	61	53	405
Liansheng Xia China	12	216 0.8×	139 0.5×	121 0.7×	198 3.1×	30 0.5×	58	380
M. Ruebush United States	11	355 1.3×	383 1.5×	379 2.2×	52 0.8×	84 1.4×	17	519
M. LaCour United States	12	303 1.1×	314 1.2×	378 2.2×	89 1.4×	88 1.4×	22	512
Richard Ness United States	12	236 0.8×	148 0.6×	133 0.8×	24 0.4×	12 0.2×	42	337
S. Mitra India	11	245 0.9×	271 1.0×	238 1.4×	24 0.4×	51 0.8×	55	362
Peitian Cong China	11	226 0.8×	168 0.6×	132 0.8×	30 0.5×	20 0.3×	74	321
K. Ramaswamy United States	10	265 0.9×	46 0.2×	98 0.6×	42 0.7×	88 1.4×	14	308
Wilkin Tang United States	12	220 0.8×	34 0.1×	132 0.8×	113 1.8×	11 0.2×	22	328
M.W. O'Malley United States	14	616 2.2×	553 2.1×	388 2.3×	37 0.6×	5 0.1×	53	718
Xinbing Cheng China	11	252 0.9×	271 1.0×	240 1.4×	41 0.6×	37 0.6×	48	364

Countries citing papers authored by I. V. Grekhov

Since Specialization

Citations

This map shows the geographic impact of I. V. Grekhov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. V. Grekhov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. V. Grekhov more than expected).

Fields of papers citing papers by I. V. Grekhov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. V. Grekhov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. V. Grekhov. The network helps show where I. V. Grekhov may publish in the future.

Co-authorship network of co-authors of I. V. Grekhov

This figure shows the co-authorship network connecting the top 25 collaborators of I. V. Grekhov. A scholar is included among the top collaborators of I. V. Grekhov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. V. Grekhov. I. V. Grekhov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Grekhov, I. V., et al.. (2020). Prospects for the use of ultrasonic influence in the process of preparation of oil at the Priobskoye field. Neftyanoe khozyaystvo - Oil Industry. 3. 28–30.

Grekhov, I. V., et al.. (2020). Case of Physical Fields Application to Accelerate Oil Preprocessing (Russian). SPE Russian Petroleum Technology Conference. 1 indexed citations

Grekhov, I. V., et al.. (2017). The Numerical Simulation of the Nanosecond Switching of a p-SOS Diode. Technical Physics. 62(12). 1787–1790. 1 indexed citations

Grekhov, I. V., et al.. (2016). Powerful diode nanosecond current opening switch made of p-silicon (p-SOS). Technical Physics. 61(3). 424–427. 3 indexed citations

Ivanov, P. A. & I. V. Grekhov. (2016). Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation. Technical Physics. 61(2). 240–243. 4 indexed citations

Grekhov, I. V., et al.. (2011). High-voltage fast diode with “soft” recovery. Technical Physics. 56(10). 1429–1433. 3 indexed citations

Grekhov, I. V., et al.. (2009). Distributed microgate bipolar switches: Onset conditions for dynamic breakdown at turn-off. Technical Physics. 54(10). 1481–1489. 1 indexed citations

Grekhov, I. V., et al.. (2008). Decreasing dynamic turn-off losses in high-power distributed microgate bipolar switches. Technical Physics Letters. 34(5). 435–438. 1 indexed citations

Grekhov, I. V., et al.. (2007). A high-frequency semiconductor generator of high-voltage nanosecond pulses. Instruments and Experimental Techniques. 50(3). 356–358. 6 indexed citations

10.

Grekhov, I. V., et al.. (2007). Semiconductor formers of high-voltage pulses of nanosecond duration. Instruments and Experimental Techniques. 50(3). 350–352. 3 indexed citations

11.

Grekhov, I. V., et al.. (2003). Deep modulation of conductance in Ag/PLZT/LSCO ferroelectric field-effect transistor. Physica E Low-dimensional Systems and Nanostructures. 17. 640–642. 2 indexed citations

12.

Grekhov, I. V., et al.. (2003). Ion-beam mixing at Ni/n-6H–SiC interface under irradiation by H+-ions. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 215(3-4). 385–388. 4 indexed citations

13.

Grekhov, I. V., et al.. (2003). High-Voltage RSD Switches of Submegaampere Current Pulses of Microsecond Duration. Instruments and Experimental Techniques. 46(1). 48–53. 8 indexed citations

14.

Grekhov, I. V. & G. Mesyats. (2003). Physical basis for high power semiconductor nanosecond opening switches. 2. 1158–1161. 1 indexed citations

15.

Grekhov, I. V. & G. Mesyats. (2000). Physical basis for high-power semiconductor nanosecond opening switches. IEEE Transactions on Plasma Science. 28(5). 1540–1544. 68 indexed citations

16.

Grekhov, I. V., et al.. (2000). A high-frequency reverse switch-on dynistor generator for high-power induction heating systems. Instruments and Experimental Techniques. 43(1). 63–65. 2 indexed citations

17.

Grekhov, I. V., et al.. (1998). Operation of a bipolar transistor with a tunnel MOS emitter and an induced base from 4.2 to 300K. Cryogenics. 38(6). 613–618. 3 indexed citations

18.

Argunova, T. S., et al.. (1996). Dislocations in silicon structures prepared by direct bonding of surfaces with a relief. Physics of the Solid State. 38(11). 1832–1834. 6 indexed citations

19.

Alfërov, Zh. I., et al.. (1987). Formation of high-voltage potential drops in the picosecond range on GaAs diodes. 13. 1089–1093. 1 indexed citations

20.

Grekhov, I. V., et al.. (1985). Power drift step recovery diodes (DSRD). Solid-State Electronics. 28(6). 597–599. 100 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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