I. V. Grekhov

52 papers receiving 379 citations

Peers

I. V. Grekhov
Comparison fields: 5 of 27
  • Electrical and Electronic Engineering 283
  • Control and Systems Engineering 263
  • Atomic and Molecular Physics, and Optics 171
  • Materials Chemistry 64
  • Radiology, Nuclear Medicine and Imaging 61
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M. Ruebush United States
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I. V. Grekhov relative to Liansheng Xia China Liansheng Xia's profile →
Citations per field
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Citations per year

Countries citing papers authored by I. V. Grekhov

Since Specialization
Citations

This map shows the geographic impact of I. V. Grekhov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. V. Grekhov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. V. Grekhov more than expected).

Fields of papers citing papers by I. V. Grekhov

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. V. Grekhov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. V. Grekhov. The network helps show where I. V. Grekhov may publish in the future.

Co-authorship network of co-authors of I. V. Grekhov

This figure shows the co-authorship network connecting the top 25 collaborators of I. V. Grekhov. A scholar is included among the top collaborators of I. V. Grekhov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. V. Grekhov. I. V. Grekhov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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Dislocations in silicon structures prepared by direct bonding of surfaces with a relief
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Formation of high-voltage potential drops in the picosecond range on GaAs diodes
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About I. V. Grekhov

I. V. Grekhov is a scholar working on Control and Systems Engineering, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 53 papers that have together received 405 indexed citations. Recurring topics across this work include Pulsed Power Technology Applications (21 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Silicon Carbide Semiconductor Technologies (11 papers). The work is most often cited by research in Control and Systems Engineering (263 citations), Atomic and Molecular Physics, and Optics (171 citations) and Electrical and Electronic Engineering (283 citations). I. V. Grekhov has collaborated with scholars based in Russia, Netherlands and Germany. Frequent co-authors include G. Mesyats, S.V. Shenderey, A.F. Kardo-Sysoev, S. V. Korotkov, Alexander Kozlov, P. A. Ivanov, A. S. Zubrilov, Keping Yan, E.J.M. van Heesch and S.A. Nair. Their work appears in journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and Review of Scientific Instruments.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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