HoKwon Kim

4.2k total citations · 2 hit papers
27 papers, 3.1k citations indexed

About

HoKwon Kim is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, HoKwon Kim has authored 27 papers receiving a total of 3.1k indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Materials Chemistry, 16 papers in Electrical and Electronic Engineering and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in HoKwon Kim's work include Graphene research and applications (14 papers), 2D Materials and Applications (10 papers) and Advanced Memory and Neural Computing (4 papers). HoKwon Kim is often cited by papers focused on Graphene research and applications (14 papers), 2D Materials and Applications (10 papers) and Advanced Memory and Neural Computing (4 papers). HoKwon Kim collaborates with scholars based in United States, France and United Kingdom. HoKwon Kim's co-authors include Cecilia Mattevi, Manish Chhowalla, Goki Eda, Hisato Yamaguchi, András Kis, Eduardo Saiz, Dmitry Ovchinnikov, M. Reyes Calvo, Luca Artiglia and Stefano Agnoli and has published in prestigious journals such as Nano Letters, ACS Nano and Applied Physics Letters.

In The Last Decade

HoKwon Kim

26 papers receiving 3.1k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

A review of chemical vapour deposition of graphene on copper

2010 1.2k citations Cecilia Mattevi, HoKwon Kim et al. Journal of Materials Chemistry profile →
Insulator to Semimetal Transition in Graphene Oxide

2009 565 citations Goki Eda, Cecilia Mattevi et al. The Journal of Physical Chemistry C profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
HoKwon Kim United States	15	2.7k	1.4k	1.0k	419	271	27	3.1k
Zhixian Zhou United States	28	2.9k 1.1×	2.0k 1.4×	759 0.7×	519 1.2×	307 1.1×	72	3.8k
Yangbo Zhou China	27	2.4k 0.9×	1.5k 1.1×	885 0.8×	671 1.6×	480 1.8×	97	3.3k
Da Luo China	24	2.4k 0.9×	1.4k 1.0×	914 0.9×	568 1.4×	232 0.9×	42	3.2k
Un Jeong Kim South Korea	24	1.7k 0.7×	982 0.7×	676 0.6×	421 1.0×	252 0.9×	87	2.4k
Nihar Pradhan United States	27	2.8k 1.1×	1.7k 1.2×	651 0.6×	378 0.9×	336 1.2×	88	3.5k
Michael L. Geier United States	20	2.7k 1.0×	2.4k 1.7×	1.2k 1.1×	338 0.8×	312 1.2×	29	3.7k
Sang Hoon Chae South Korea	20	3.5k 1.3×	1.8k 1.2×	845 0.8×	380 0.9×	524 1.9×	47	4.1k
Dinh Loc Duong⧫ South Korea	34	3.6k 1.4×	2.1k 1.5×	902 0.9×	607 1.4×	481 1.8×	71	4.3k
Guibai Xie China	18	2.2k 0.8×	1.3k 0.9×	1.0k 1.0×	268 0.6×	372 1.4×	30	2.9k
Cormac Ó Coileáin Ireland	26	1.8k 0.7×	1.5k 1.1×	815 0.8×	659 1.6×	265 1.0×	79	2.6k

Countries citing papers authored by HoKwon Kim

Since Specialization

Citations

This map shows the geographic impact of HoKwon Kim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by HoKwon Kim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites HoKwon Kim more than expected).

Fields of papers citing papers by HoKwon Kim

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by HoKwon Kim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by HoKwon Kim. The network helps show where HoKwon Kim may publish in the future.

Co-authorship network of co-authors of HoKwon Kim

This figure shows the co-authorship network connecting the top 25 collaborators of HoKwon Kim. A scholar is included among the top collaborators of HoKwon Kim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with HoKwon Kim. HoKwon Kim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Kim, HoKwon, et al.. (2026). A monolithic three-dimensional integrated red micro-LED display on silicon using AlInP/GaInP epilayers. Nature Electronics. 9(2). 170–179.

Cho, Ara, et al.. (2023). 32‐4: Late‐News Paper: A 1.03‐inch 2560x2560 3514 PPI Low Power OLEDoS Backplane with In‐pixel Up‐scaling Technique. SID Symposium Digest of Technical Papers. 54(1). 465–468. 3 indexed citations

Kim, HoKwon, et al.. (2022). Orientation Prediction for VR and AR Devices Using Inertial Sensors Based on Kalman-Like Error Compensation. IEEE Access. 10. 114306–114317. 1 indexed citations

Renault, O., HoKwon Kim, Dumitru Dumcenco, et al.. (2021). Correlating chemical and electronic states from quantitative photoemission electron microscopy of transition-metal dichalcogenide heterostructures. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 39(5). 4 indexed citations

Cun, Huanyao, Michał Macha, HoKwon Kim, et al.. (2019). Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2. Nano Research. 12(10). 2646–2652. 129 indexed citations

Cho, Hyunsu, Chun‐Won Byun, Chan‐mo Kang, et al.. (2019). White organic light-emitting diode (OLED) microdisplay with a tandem structure. Journal of Information Display. 20(4). 249–255. 33 indexed citations

Chen, Mingwei, HoKwon Kim, Dmitry Ovchinnikov, et al.. (2018). Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion. npj 2D Materials and Applications. 2(1). 66 indexed citations

Kim, HoKwon, et al.. (2017). A decoupled bit shifting technique using data encoding/decoding for DRAM redundancy repair. IEICE Electronics Express. 14(13). 20170385–20170385. 2 indexed citations

Kim, HoKwon, Dmitry Ovchinnikov, Davide Deiana, Dmitrii Unuchek, & András Kis. (2017). Suppressing Nucleation in Metal–Organic Chemical Vapor Deposition of MoS₂ Monolayers by Alkali Metal Halides. Nano Letters. 17(8). 5056–5063. 188 indexed citations

10.

Kim, HoKwon, Dumitru Dumcenco, Mathieu Frégnaux, et al.. (2016). Free-standing electronic character of monolayerMoS2in van der Waals epitaxy. Physical review. B.. 94(8). 10 indexed citations

11.

Kim, HoKwon, O. Renault, Anastasia V. Tyurnina, et al.. (2015). Doping characteristics of iodine on as-grown chemical vapor deposited graphene on Pt. Ultramicroscopy. 159. 470–475. 3 indexed citations

12.

Kim, HoKwon, O. Renault, Anastasia V. Tyurnina, et al.. (2014). Doping efficiency of single and randomly stacked bilayer graphene by iodine adsorption. Applied Physics Letters. 105(1). 39 indexed citations

13.

Kim, HoKwon, Cecilia Mattevi, Hyun‐Jun Kim, et al.. (2013). Optoelectronic properties of graphene thin films deposited by a Langmuir–Blodgett assembly. Nanoscale. 5(24). 12365–12365. 43 indexed citations

14.

Kim, HoKwon, Eduardo Saiz, Manish Chhowalla, & Cecilia Mattevi. (2013). Modeling of the self-limited growth in catalytic chemical vapor deposition of graphene. New Journal of Physics. 15(5). 53012–53012. 44 indexed citations

15.

Xiao, Ye, HoKwon Kim, Cecilia Mattevi, et al.. (2013). Influence of Cu substrate topography on the growth morphology of chemical vapour deposited graphene. Carbon. 65. 7–12. 14 indexed citations

16.

Mattevi, Cecilia, et al.. (2012). Solution-processable organic dielectrics for graphene electronics. Nanotechnology. 23(34). 344017–344017. 34 indexed citations

17.

Kim, HoKwon, Cecilia Mattevi, M. Reyes Calvo, et al.. (2012). Activation Energy Paths for Graphene Nucleation and Growth on Cu. ACS Nano. 6(4). 3614–3623. 369 indexed citations

18.

Mattevi, Cecilia, HoKwon Kim, & Manish Chhowalla. (2010). A review of chemical vapour deposition of graphene on copper. Journal of Materials Chemistry. 21(10). 3324–3334. 1169 indexed citations breakdown →

19.

Yamaguchi, Hisato, Goki Eda, Cecilia Mattevi, HoKwon Kim, & Manish Chhowalla. (2010). Highly Uniform 300 mm Wafer-Scale Deposition of Single and Multilayered Chemically Derived Graphene Thin Films. ACS Nano. 4(1). 524–528. 187 indexed citations

20.

Eda, Goki, Cecilia Mattevi, Hisato Yamaguchi, HoKwon Kim, & Manish Chhowalla. (2009). Insulator to Semimetal Transition in Graphene Oxide. The Journal of Physical Chemistry C. 113(35). 15768–15771. 565 indexed citations breakdown →

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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