H.G. Parks

658 total citations
47 papers, 479 citations indexed

About

H.G. Parks is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, H.G. Parks has authored 47 papers receiving a total of 479 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in H.G. Parks's work include Integrated Circuits and Semiconductor Failure Analysis (24 papers), Semiconductor materials and devices (24 papers) and Silicon and Solar Cell Technologies (11 papers). H.G. Parks is often cited by papers focused on Integrated Circuits and Semiconductor Failure Analysis (24 papers), Semiconductor materials and devices (24 papers) and Silicon and Solar Cell Technologies (11 papers). H.G. Parks collaborates with scholars based in United States, Switzerland and Canada. H.G. Parks's co-authors include Bert Vermeire, John F. O’Hanlon, Srini Raghavan, S. Raghavan, G. Li, G. E. Possin, Mark F. Lythgoe, Andrew M. Taylor, Amaka C Offiah and Lyn S. Chitty and has published in prestigious journals such as The Lancet, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

H.G. Parks

41 papers receiving 441 citations

Peers

H.G. Parks

EEE

RNMI

MC

AMPO

BE

H.C. Karner Germany

David A. Cross United States

U. Hahn Germany

Günther Hannesschläger Austria

Taisuke Shiraishi Japan

Wei Jia China

Yoshio Yoshioka Japan

L. Gerzberg United States

S. Oikawa Japan

H.C. Karner Germany

H.G. Parks

333 ×1.2

EEE

19 ×0.2

RNMI

369 ×3.9

MC

112 ×1.8

AMPO

128 ×2.3

BE

Citations per year, relative to H.G. Parks H.G. Parks (= 1×) peers H.C. Karner

Countries citing papers authored by H.G. Parks

Since Specialization

Citations

This map shows the geographic impact of H.G. Parks's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.G. Parks with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.G. Parks more than expected).

Fields of papers citing papers by H.G. Parks

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.G. Parks. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.G. Parks. The network helps show where H.G. Parks may publish in the future.

Co-authorship network of co-authors of H.G. Parks

This figure shows the co-authorship network connecting the top 25 collaborators of H.G. Parks. A scholar is included among the top collaborators of H.G. Parks based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H.G. Parks. H.G. Parks is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

1.

Ramberg, John S., et al.. (2012). Semiconductor Contamination: Eliciting a Physical Model Through Factorial Experimentation. Journal of Quality Technology. 44(2). 161–174. 1 indexed citations

2.

Thayyil, Sudhin, Jon O. Cleary, Neil J. Sebire, et al.. (2009). Post-mortem examination of human fetuses: a comparison of whole-body high-field MRI at 9·4 T with conventional MRI and invasive autopsy. The Lancet. 374(9688). 467–475. 111 indexed citations

3.

Mikkola, Esko, et al.. (2007). VHDL-AMS Modeling of Total Ionizing Dose Radiation Effects on CMOS Mixed Signal Circuits. IEEE Transactions on Nuclear Science. 54(4). 929–934. 15 indexed citations

4.

Pandit, Viraj, H.G. Parks, Bert Vermeire, & Srini Raghavan. (2006). Wet Cleaning of Cross-Contamination of High-k Dielectrics in Plasma Etch Tool. Journal of The Electrochemical Society. 153(11). G970–G970. 2 indexed citations

5.

Raghavan, S., et al.. (2006). Contamination of silicon dioxide films by aqueous zirconium and hafnium species. Journal of Applied Physics. 99(2). 3 indexed citations

6.

Vermeire, Bert, et al.. (2003). The effect of hafnium or zirconium contamination on MOS processes. 299–303. 2 indexed citations

7.

Parks, H.G., et al.. (2002). Evaluation of metallization systems with test structures and yield modeling. 69–74.

8.

Vermeire, Bert & H.G. Parks. (2002). The influence of copper contamination on gate oxide integrity. 30–32. 1 indexed citations

9.

Schrimpf, Ronald D., et al.. (2001). A generalized model for the lifetime of microelectronic components, applied to storage conditions. Microelectronics Reliability. 41(2). 317–322. 7 indexed citations

10.

Vermeire, Bert, et al.. (1998). The effect of copper contamination on field overlap edges and perimeter junction leakage current. IEEE Transactions on Semiconductor Manufacturing. 11(2). 232–238. 32 indexed citations

11.

Workman, Richard K., et al.. (1998). Multi-step process control and characterization of scanning probe lithography. Applied Physics A. 66(7). S729–S733. 2 indexed citations

12.

Parks, H.G., et al.. (1995). Deposition of Copper from a Buffered Oxide Etchant onto Silicon Wafers. Journal of The Electrochemical Society. 142(2). 671–676. 19 indexed citations

13.

Parks, H.G., et al.. (1994). Quantifying the impact of homogeneous metal contamination using test structure metrology and device modeling. IEEE Transactions on Semiconductor Manufacturing. 7(3). 249–258. 15 indexed citations

14.

Possin, G. E., et al.. (1984). MOSFET's fabricated in laser-recrystallized Silicon on Quartz using selectively absorbing dielectrical layers. IEEE Transactions on Electron Devices. 31(1). 68–74. 6 indexed citations

15.

Possin, G. E., et al.. (1982). The Effects of Selectively Absorbing Dielectric Layers and Beam Shaping on Recrystallization and Fet Characteristics in Laser Recrystallized Silicon on Amorphous Substrates. MRS Proceedings. 13.

16.

Possin, G. E., et al.. (1980). Convection in Pulsed Laser Formed Melts. MRS Proceedings. 1. 2 indexed citations

17.

Kirkpatrick, C. G., J. F. Norton, H.G. Parks, & G. E. Possin. (1978). New concepts for electron–ion beam and electron–electron beam memories. Journal of Vacuum Science and Technology. 15(3). 841–844. 4 indexed citations

18.

Possin, G. E., et al.. (1975). BEAMOS&#8212;A new electron beam digital memory device. 305–308. 1 indexed citations

19.

Parks, H.G., et al.. (1975). Advances in matrix-lens technology. Journal of Vacuum Science and Technology. 12(6). 1161–1164. 2 indexed citations

20.

Parks, H.G., et al.. (1975). A semiconductor nonvolatile electron beam accessed mass memory. Proceedings of the IEEE. 63(8). 1230–1240. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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