Hardhyan Sheoran

458 total citations
15 papers, 358 citations indexed

About

Hardhyan Sheoran is a scholar working on Materials Chemistry, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Hardhyan Sheoran has authored 15 papers receiving a total of 358 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Materials Chemistry, 11 papers in Electronic, Optical and Magnetic Materials and 9 papers in Electrical and Electronic Engineering. Recurrent topics in Hardhyan Sheoran's work include Ga2O3 and related materials (11 papers), ZnO doping and properties (7 papers) and Semiconductor materials and devices (6 papers). Hardhyan Sheoran is often cited by papers focused on Ga2O3 and related materials (11 papers), ZnO doping and properties (7 papers) and Semiconductor materials and devices (6 papers). Hardhyan Sheoran collaborates with scholars based in India, Taiwan and Australia. Hardhyan Sheoran's co-authors include Rajendra Singh, N. Manikanthababu, Ashutosh Kumar, Shuchi Kaushik, Bhera Ram Tak, Sanju Rani, Manoj Kumar, Vidya Nand Singh, Shi Fang and Haiding Sun and has published in prestigious journals such as ACS Applied Materials & Interfaces, Nanoscale and Journal of Physics D Applied Physics.

In The Last Decade

Hardhyan Sheoran

14 papers receiving 349 citations

Peers

Hardhyan Sheoran
Pardeep K. Jha India
N.K. Hassan Iraq
Urvashi Varshney India
Yongxue Zhu China
Manoj K. Yadav India
Yongkuan Xu China
Sam‐Dong Lee Japan
Qiuju Feng China
Shuchi Kaushik India
Wenbo Tang China
Pardeep K. Jha India
Hardhyan Sheoran
Citations per year, relative to Hardhyan Sheoran Hardhyan Sheoran (= 1×) peers Pardeep K. Jha

Countries citing papers authored by Hardhyan Sheoran

Since Specialization
Citations

This map shows the geographic impact of Hardhyan Sheoran's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hardhyan Sheoran with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hardhyan Sheoran more than expected).

Fields of papers citing papers by Hardhyan Sheoran

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hardhyan Sheoran. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hardhyan Sheoran. The network helps show where Hardhyan Sheoran may publish in the future.

Co-authorship network of co-authors of Hardhyan Sheoran

This figure shows the co-authorship network connecting the top 25 collaborators of Hardhyan Sheoran. A scholar is included among the top collaborators of Hardhyan Sheoran based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hardhyan Sheoran. Hardhyan Sheoran is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Sheoran, Hardhyan, et al.. (2024). High-performance and low-power consumption deep UV photodetectors based on MOCVD-grown ZnGaO epilayers with high temperature functionality. Materials Science in Semiconductor Processing. 179. 108418–108418. 12 indexed citations
2.
Sheoran, Hardhyan, et al.. (2024). MBE-grown ZnTe epitaxial layer based broadband photodetector with high response and excellent switching characteristics. Semiconductor Science and Technology. 39(9). 95005–95005. 2 indexed citations
3.
Sheoran, Hardhyan, et al.. (2024). Investigation of traps in halide vapor-phase epitaxy-grown β-Ga2O3 epilayers/n+-Ga2O3 using deep-level transient spectroscopy. Semiconductor Science and Technology. 39(12). 125007–125007.
4.
Sheoran, Hardhyan, et al.. (2023). Study of electrical characteristics of high quality Pt SBDs fabricated on HVPE-Grown β-Ga2O3 epilayers in a wide temperature range (80–525 K). Materials Science in Semiconductor Processing. 165. 107606–107606. 7 indexed citations
5.
Sheoran, Hardhyan & Rajendra Singh. (2023). Investigation of high-performance Schottky diodes on a Ga2O3 epilayer using Cu with high barrier height, high temperature stability and repeatability. Journal of Physics D Applied Physics. 56(40). 405113–405113. 4 indexed citations
6.
7.
Sheoran, Hardhyan, Shi Fang, Fangzhou Liang, et al.. (2022). High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga2O3-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities. ACS Applied Materials & Interfaces. 14(46). 52096–52107. 66 indexed citations
8.
Kaushik, Shuchi, et al.. (2022). Investigation of a vertical 2D/3D semiconductor heterostructure based on GaSe and Ga2O3. Journal of Physics D Applied Physics. 55(36). 365105–365105. 17 indexed citations
9.
Manikanthababu, N., et al.. (2022). Review of Radiation-Induced Effects on β-Ga2O3 Materials and Devices. Crystals. 12(7). 1009–1009. 39 indexed citations
10.
Manikanthababu, N., Hardhyan Sheoran, Shahjahan Khan, et al.. (2022). Electrical Characteristics and Defect Dynamics Induced by Swift Heavy Ion Irradiation in Pt/PtO/-Ga₂O₃ Vertical Schottky Barrier Diodes . IEEE Transactions on Electron Devices. 69(11). 5996–6001. 14 indexed citations
11.
Rani, Sanju, Manoj Kumar, Hardhyan Sheoran, Rajendra Singh, & Vidya Nand Singh. (2022). Rapidly responding room temperature NO2 gas sensor based on SnSe nanostructured film. Materials Today Communications. 30. 103135–103135. 40 indexed citations
12.
Kaushik, Shuchi, Subhajit Karmakar, R. K. Varshney, et al.. (2022). Deep-Ultraviolet Photodetectors Based on Hexagonal Boron Nitride Nanosheets Enhanced by Localized Surface Plasmon Resonance in Al Nanoparticles. ACS Applied Nano Materials. 5(5). 7481–7491. 26 indexed citations
13.
Sheoran, Hardhyan, Ashutosh Kumar, & Rajendra Singh. (2022). A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications. ACS Applied Electronic Materials. 4(6). 2589–2628. 75 indexed citations
14.
15.
Sheoran, Hardhyan, Bhera Ram Tak, N. Manikanthababu, & Rajendra Singh. (2020). Temperature-Dependent Electrical Characteristics of Ni/Au Vertical Schottky Barrier Diodes on β-Ga2O3 Epilayers. ECS Journal of Solid State Science and Technology. 9(5). 55004–55004. 41 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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