Hao Ge

1.3k total citations · 1 hit paper
17 papers, 1.1k citations indexed

About

Hao Ge is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Organic Chemistry. According to data from OpenAlex, Hao Ge has authored 17 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 6 papers in Materials Chemistry and 3 papers in Organic Chemistry. Recurrent topics in Hao Ge's work include Semiconductor materials and devices (6 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Advanced Battery Materials and Technologies (3 papers). Hao Ge is often cited by papers focused on Semiconductor materials and devices (6 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Advanced Battery Materials and Technologies (3 papers). Hao Ge collaborates with scholars based in China and United States. Hao Ge's co-authors include K.‐X. Su, Qing Xia, Zixi Liu, Guangwen Chen, Quan Yuan, Dianlong Wang, Ning Li, Zhe Li, Changsong Dai and Deyu Li and has published in prestigious journals such as Chemical Reviews, Chemical Engineering Journal and ACS Applied Materials & Interfaces.

In The Last Decade

Hao Ge

16 papers receiving 1.1k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Advances in Homogeneous and Heterogeneous Catalytic Asymmetric Epoxidation

2005 858 citations Qing Xia, Hao Ge et al. Chemical Reviews profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Hao Ge China	8	601	534	318	137	107	17	1.1k
Koji Yonehara Japan	19	791 1.3×	714 1.3×	620 1.9×	243 1.8×	75 0.7×	32	1.5k
Lai‐Hon Chung China	23	455 0.8×	544 1.0×	430 1.4×	511 3.7×	296 2.8×	72	1.4k
Elizabeth Gómez Mexico	19	660 1.1×	263 0.5×	293 0.9×	83 0.6×	53 0.5×	65	971
Colin W. Anson United States	12	235 0.4×	208 0.4×	143 0.4×	342 2.5×	411 3.8×	12	944
Zhonggao Zhou China	18	416 0.7×	500 0.9×	199 0.6×	366 2.7×	285 2.7×	71	1.3k
Chan Song China	17	160 0.3×	640 1.2×	336 1.1×	285 2.1×	118 1.1×	33	1.2k
Sedat Yaşar Türkiye	26	1.3k 2.2×	339 0.6×	311 1.0×	555 4.1×	72 0.7×	113	2.0k
Sai V. C. Vummaleti Saudi Arabia	21	896 1.5×	193 0.4×	458 1.4×	70 0.5×	397 3.7×	43	1.6k
Natarajan Saravanan India	11	146 0.2×	148 0.3×	106 0.3×	95 0.7×	107 1.0×	34	457

Countries citing papers authored by Hao Ge

Since Specialization

Citations

This map shows the geographic impact of Hao Ge's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hao Ge with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hao Ge more than expected).

Fields of papers citing papers by Hao Ge

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hao Ge. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hao Ge. The network helps show where Hao Ge may publish in the future.

Co-authorship network of co-authors of Hao Ge

This figure shows the co-authorship network connecting the top 25 collaborators of Hao Ge. A scholar is included among the top collaborators of Hao Ge based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hao Ge. Hao Ge is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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17 of 17 papers shown

Ge, Hao, et al.. (2025). Optical property modulation and applications of Tm3+-Doped CsPbBr3 quantum dot glass. Ceramics International. 51(26). 51078–51088.

Hu, Yibo, et al.. (2024). Modeling of Threshold Voltage Degradation of 22nm FD-SOI nMOSFETs Under Dynamic Voltage Scaling. IEEE Transactions on Device and Materials Reliability. 24(3). 463–465. 1 indexed citations

Zhang, Wenfeng, Hao Ge, Guangyuan Yan, et al.. (2023). Preparation of High Geometric Filling Factor Perovskite Module and Feasibility Study on Electrocatalytic Hydrogen Production. Catalysts. 13(6). 953–953. 3 indexed citations

Ge, Hao, Zhijia Sun, Qin Zhao, et al.. (2022). Chemical coupling of manganese–cobalt oxide and oxidized multi-walled carbon nanotubes for enhanced lithium storage. Journal of Colloid and Interface Science. 618. 322–332. 12 indexed citations

Ge, Hao, et al.. (2022). Analysis of back-gate bias impact on 22 nm FDSOI SRAM cell. Solid-State Electronics. 196. 108418–108418. 2 indexed citations

Dong, Peng, et al.. (2021). Capacity plunge of lithium-ion batteries induced by electrolyte drying-out: Experimental and Modeling Study. Journal of Energy Storage. 42. 103013–103013. 46 indexed citations

Wang, Qing, et al.. (2021). Characterization of 22 nm FDSOI nMOSFETs With Different Backplane Doping at Cryogenic Temperature. IEEE Journal of the Electron Devices Society. 9. 1030–1035. 4 indexed citations

Wang, Qing, et al.. (2021). A highly reliable radiation hardened 8T SRAM cell design. Microelectronics Reliability. 125. 114376–114376. 7 indexed citations

Ge, Hao, et al.. (2020). The impact of total ionizing dose on RF performance of 130 nm PD SOI I/O nMOSFETs. Microelectronics Reliability. 116. 114001–114001. 3 indexed citations

10.

Ge, Hao, En Xia Zhang, Jing Chen, et al.. (2019). Comparing the TID-induced RF performance degradation of floating body and body contacted 130 nm SOI NMOS transistors. Microelectronics Reliability. 104. 113547–113547. 3 indexed citations

11.

Ge, Hao, Hui Tian, Yangen Zhou, et al.. (2014). Influence of Surface States on the Evaluation of the Flat Band Potential of TiO₂. ACS Applied Materials & Interfaces. 6(4). 2401–2406. 37 indexed citations

12.

Ge, Hao, Ning Li, Deyu Li, Changsong Dai, & Dianlong Wang. (2008). Study on the effect of Li doping in spinel Li4+xTi5−xO12 (0⩽x⩽0.2) materials for lithium-ion batteries. Electrochemistry Communications. 10(7). 1031–1034. 41 indexed citations

13.

Singhal, Raj K., et al.. (2007). Proceedings of the sixteenth international symposium on mine planning and equipment selection (MPES 2007) and the tenth international symposium on environmental issues and waste management in energy and mineral production (SWEMP 2007). OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 1 indexed citations

14.

Ge, Hao, et al.. (2006). Gas phase partial oxidation of toluene over modified V2O5/TiO2 catalysts in a microreactor. Chemical Engineering Journal. 127(1-3). 39–46. 36 indexed citations

15.

Ge, Hao, et al.. (2005). Gas phase catalytic partial oxidation of toluene in a microchannel reactor. Catalysis Today. 110(1-2). 171–178. 35 indexed citations

16.

Xia, Qinghua, et al.. (2005). Advances in Homogeneous and Heterogeneous Catalytic Asymmetric Epoxidation. ChemInform. 36(36). 1 indexed citations

17.

Xia, Qing, et al.. (2005). Advances in Homogeneous and Heterogeneous Catalytic Asymmetric Epoxidation. Chemical Reviews. 105(5). 1603–1662. 858 indexed citations breakdown →

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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