H. Eisele

1.6k total citations
72 papers, 1.1k citations indexed

About

H. Eisele is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Astronomy and Astrophysics. According to data from OpenAlex, H. Eisele has authored 72 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 66 papers in Electrical and Electronic Engineering, 51 papers in Atomic and Molecular Physics, and Optics and 42 papers in Astronomy and Astrophysics. Recurrent topics in H. Eisele's work include Semiconductor Quantum Structures and Devices (46 papers), Superconducting and THz Device Technology (42 papers) and Radio Frequency Integrated Circuit Design (31 papers). H. Eisele is often cited by papers focused on Semiconductor Quantum Structures and Devices (46 papers), Superconducting and THz Device Technology (42 papers) and Radio Frequency Integrated Circuit Design (31 papers). H. Eisele collaborates with scholars based in United States, United Kingdom and Germany. H. Eisele's co-authors include G.I. Haddad, Anders Rydberg, R.E. Miles, X.-C. Zhang, A. Krotkus, E. Zielinski, H. Schweizer, G. Weimann, K. Streubel and E. H. Linfield and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

H. Eisele

67 papers receiving 977 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Eisele United States 18 939 705 497 118 118 72 1.1k
Stephen Sarkozy United States 17 1.2k 1.3× 474 0.7× 403 0.8× 118 1.0× 38 0.3× 47 1.3k
E. Peytavit France 23 1.1k 1.2× 437 0.6× 200 0.4× 32 0.3× 235 2.0× 88 1.3k
C. K. Walker United States 10 516 0.5× 301 0.4× 258 0.5× 33 0.3× 38 0.3× 35 753
W.L. Bishop United States 17 977 1.0× 384 0.5× 702 1.4× 67 0.6× 67 0.6× 54 1.1k
J. Łusakowski Poland 18 1.0k 1.1× 822 1.2× 332 0.7× 210 1.8× 90 0.8× 117 1.3k
V. Gruz̆inskis Lithuania 18 683 0.7× 619 0.9× 123 0.2× 218 1.8× 54 0.5× 99 857
Kaveh Delfanazari United Kingdom 18 657 0.7× 375 0.5× 334 0.7× 453 3.8× 118 1.0× 53 974
E. Starikov France 19 835 0.9× 762 1.1× 126 0.3× 262 2.2× 76 0.6× 124 1.0k
Satoshi Kohjiro Japan 13 300 0.3× 186 0.3× 198 0.4× 285 2.4× 42 0.4× 73 508
A. E. Zhukov Russia 20 1.2k 1.3× 1.3k 1.9× 99 0.2× 94 0.8× 124 1.1× 64 1.5k

Countries citing papers authored by H. Eisele

Since Specialization
Citations

This map shows the geographic impact of H. Eisele's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Eisele with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Eisele more than expected).

Fields of papers citing papers by H. Eisele

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Eisele. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Eisele. The network helps show where H. Eisele may publish in the future.

Co-authorship network of co-authors of H. Eisele

This figure shows the co-authorship network connecting the top 25 collaborators of H. Eisele. A scholar is included among the top collaborators of H. Eisele based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Eisele. H. Eisele is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Eisele, H.. (2015). Negative differential resistance devices for generation of terahertz radiation. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9585. 958508–958508. 1 indexed citations
2.
Eisele, H.. (2009). Third-Harmonic Power Extraction From InP Gunn Devices up to 455 GHz. IEEE Microwave and Wireless Components Letters. 19(6). 416–418. 18 indexed citations
4.
Eisele, H.. (2005). 355 GHz oscillator with GaAs TUNNETT diode. Electronics Letters. 41(6). 329–331. 21 indexed citations
5.
Eisele, H., et al.. (2004). The Study of Harmonic-Mode Operation of GaAs TUNNETT Diodes and InP Gunn Devices Using a Versatile Terahertz Interferometer. 336. 5 indexed citations
6.
Eisele, H., et al.. (2004). Submillimeter-Wave InP Gunn Devices. IEEE Transactions on Microwave Theory and Techniques. 52(10). 2371–2378. 65 indexed citations
8.
Eisele, H. & G.I. Haddad. (2000). State of the Art of Two Terminal Devices as Millimeter- and Submillimeter-Wave Sources. Softwaretechnik-Trends. 139. 1 indexed citations
9.
Eisele, H., et al.. (2000). Power Generation with Fundamental and Second-Harmonic Mode InP Gunn Oscillators - Performance Above 200 GHz and Upper Frequency Limits. Softwaretechnik-Trends. 155. 1 indexed citations
10.
Eisele, H., Anders Rydberg, & G.I. Haddad. (2000). Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above. IEEE Transactions on Microwave Theory and Techniques. 48(4). 626–631. 73 indexed citations
11.
Eisele, H.. (1998). Second-harmonic power extraction from InP Gunn deviceswith morethan 1 mW in 260-320 GHz frequency range. Electronics Letters. 34(25). 2412–2413. 14 indexed citations
12.
Goetz, Peter G., et al.. (1997). 1.55-?m optical phase-locked loop with integratedp-i-n / HBT photoreceiver in a flexible development platform. Microwave and Optical Technology Letters. 15(1). 4–7. 7 indexed citations
13.
Mains, R. K., et al.. (1994). High-Efficiency InP IMPATT Diodes for High-Frequency Power Generation. Softwaretechnik-Trends. 648. 2 indexed citations
14.
Eisele, H. & G.I. Haddad. (1994). D-band InP Gunn devices with second-harmonic powerextraction up to290 GHz. Electronics Letters. 30(23). 1950–1951. 18 indexed citations
15.
Mains, R. K., et al.. (1993). Numerical Simulation of TUNNETT and MITATT Devices in the Millimeter and Submillimeter Range. 362. 4 indexed citations
16.
Eisele, H., et al.. (1992). A CW GaAs TUNNETT Diode Source for 100 GHz and Above. 24. 467–472. 5 indexed citations
17.
Eisele, H.. (1991). GaAs W-band IMPATT diodes - The first step to higher frequencies. MiJo. 34. 275. 7 indexed citations
18.
Eisele, H., et al.. (1991). GaAs IMPATT Diodes for Frequencies above 100 GHz: Technology and Performance. 145. 1 indexed citations
19.
Eisele, H., et al.. (1983). Fading properties of a NaF:F+2* color center laser. Journal of Applied Physics. 54(9). 4821–4825. 12 indexed citations
20.
Eisele, H., et al.. (1983). In 0.53 Ga 0.47 As liquid phase epitaxy on (100)-InP substrates at low growth temperatures. Electronics Letters. 19(24). 1035–1036. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026