H. E. Scheibler

690 total citations
32 papers, 601 citations indexed

About

H. E. Scheibler is a scholar working on Biomedical Engineering, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, H. E. Scheibler has authored 32 papers receiving a total of 601 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Biomedical Engineering, 15 papers in Atomic and Molecular Physics, and Optics and 14 papers in Electrical and Electronic Engineering. Recurrent topics in H. E. Scheibler's work include Photocathodes and Microchannel Plates (23 papers), Electron and X-Ray Spectroscopy Techniques (10 papers) and Semiconductor Quantum Structures and Devices (7 papers). H. E. Scheibler is often cited by papers focused on Photocathodes and Microchannel Plates (23 papers), Electron and X-Ray Spectroscopy Techniques (10 papers) and Semiconductor Quantum Structures and Devices (7 papers). H. E. Scheibler collaborates with scholars based in Russia, United Kingdom and Germany. H. E. Scheibler's co-authors include A. S. Terekhov, A. S. Jaroshevich, S. N. Kosolobov, C. Krantz, Alexander Wolf, D. A. Orlov, V. L. Alperovich, L. B. Jones, Boris Militsyn and А. Г. Паулиш and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

H. E. Scheibler

30 papers receiving 595 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. E. Scheibler Russia 11 303 209 171 162 98 32 601
A. S. Jaroshevich Russia 10 245 0.8× 215 1.0× 179 1.0× 231 1.4× 97 1.0× 36 606
S. N. Kosolobov Russia 7 230 0.8× 134 0.6× 155 0.9× 79 0.5× 97 1.0× 18 458
T. Rao United States 14 294 1.0× 261 1.2× 106 0.6× 215 1.3× 47 0.5× 54 643
L. Cultrera United States 17 458 1.5× 430 2.1× 154 0.9× 349 2.2× 23 0.2× 64 888
N. Gordillo Spain 17 103 0.3× 195 0.9× 493 2.9× 65 0.4× 67 0.7× 50 787
Jared Schwede United States 9 180 0.6× 271 1.3× 444 2.6× 154 1.0× 23 0.2× 11 799
D. A. Orlov Germany 5 158 0.5× 116 0.6× 150 0.9× 65 0.4× 101 1.0× 13 385
N. Onda Switzerland 18 281 0.9× 470 2.2× 146 0.9× 967 6.0× 137 1.4× 35 1.1k
Ch. Morawe France 17 121 0.4× 148 0.7× 151 0.9× 185 1.1× 40 0.4× 45 681
J. Steinbeck United States 11 105 0.3× 80 0.4× 266 1.6× 72 0.4× 29 0.3× 27 457

Countries citing papers authored by H. E. Scheibler

Since Specialization
Citations

This map shows the geographic impact of H. E. Scheibler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. E. Scheibler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. E. Scheibler more than expected).

Fields of papers citing papers by H. E. Scheibler

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. E. Scheibler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. E. Scheibler. The network helps show where H. E. Scheibler may publish in the future.

Co-authorship network of co-authors of H. E. Scheibler

This figure shows the co-authorship network connecting the top 25 collaborators of H. E. Scheibler. A scholar is included among the top collaborators of H. E. Scheibler based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. E. Scheibler. H. E. Scheibler is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Терещенко, О. Е., et al.. (2025). Direct Spin-Imaging Detector Based on Freestanding Magnetic Nanomembranes. Physical Review Letters. 134(15). 157002–157002.
2.
Golyashov, V. A., et al.. (2024). Na2KSb/CsxSb interface engineering for high-efficiency photocathodes. Physical Review Applied. 22(2). 4 indexed citations
3.
Jones, L. B., H. E. Scheibler, A. S. Terekhov, et al.. (2022). The measurement of photocathode transverse energy distribution curves (TEDCs) using the transverse energy spread spectrometer (TESS) experimental system. Review of Scientific Instruments. 93(11). 113314–113314. 3 indexed citations
4.
Jones, L. B., H. E. Scheibler, S. N. Kosolobov, et al.. (2021). Non–monotonic behaviour in the mean transverse energy of electrons emitted from a reflection–mode p-GaAs(Cs,O) photocathode during its QE degradation through oxygen exposure. Journal of Physics D Applied Physics. 54(20). 205301–205301. 10 indexed citations
5.
Kosolobov, S. N., et al.. (2020). The increase in band bending at the p-GaN(Cs) – vacuum interface due to the photoemission from surface states. Journal of Physics Conference Series. 1482(1). 12008–12008.
6.
Kosolobov, S. N., et al.. (2018). Photoelectron scattering in a p-GaN(Cs,O) photocathode. Journal of Physics Conference Series. 993. 12027–12027. 1 indexed citations
8.
Kosolobov, S. N., et al.. (2016). Optical phonon cascade emission by photoelectrons at a p-GaN (Cs,O)–vacuum interface. Journal of Experimental and Theoretical Physics Letters. 104(2). 135–139. 6 indexed citations
9.
Scheibler, H. E., et al.. (2015). p-GaAs(Cs,O)-photocathodes: Demarcation of domains of validity for practical models of the activation layer. Applied Physics Letters. 106(18). 16 indexed citations
10.
Militsyn, Boris, I. Burrows, Narong Chanlek, et al.. (2011). Development of high brightness, high repetition rate photoelectron injectors at STFC Daresbury Laboratory. Journal of Physics Conference Series. 298. 12006–12006. 3 indexed citations
11.
Scheibler, H. E., et al.. (2010). Spectroscopy of systems with time variable parameters: photoreflectance of GaAs(001) under cesium adsorption. Journal of Physics Condensed Matter. 22(18). 185801–185801. 9 indexed citations
12.
Jones, L. B., S. N. Kosolobov, Boris Militsyn, et al.. (2009). Cooled Transmission-Mode NEA-Photocathode with a Band-Graded Active Layer for High Brightness Electron Source. AIP conference proceedings. 17 indexed citations
13.
Orlov, D. A., C. Krantz, Alexander Wolf, et al.. (2009). Long term operation of high quantum efficiency GaAs(Cs,O) photocathodes using multiple recleaning by atomic hydrogen. Journal of Applied Physics. 106(5). 347 indexed citations
14.
Shornikov, A., et al.. (2007). Semiconductor surfaces with negative electron affinity. e-Journal of Surface Science and Nanotechnology. 5. 80–88. 21 indexed citations
15.
Терещенко, О. Е., et al.. (2005). QUALITY CHARACTERIZATION OF NEA-PHOTOCATHODE FOR PES BY MEANS OF PHOTOEMISSION FROM DEFECT STATES. 959–963. 1 indexed citations
16.
Kosolobov, S. N., et al.. (2003). Refraction of thermalized electrons emitted ballistically into vacuum from p +-GaAs-(Cs,O). Journal of Experimental and Theoretical Physics Letters. 77(4). 167–171. 9 indexed citations
17.
Schwalm, D., A. Wolf, D. A. Orlov, et al.. (1998). Elucidation of activation layer model by means of measurements of photoelectron energy distribution curves. AIP conference proceedings. 493–494. 1 indexed citations
18.
Alperovich, V. L., A. S. Jaroshevich, H. E. Scheibler, A. S. Terekhov, & Richard L. Tober. (1997). Fourier transform analysis of electromodulation spectra: Effects of the modulation amplitude. Applied Physics Letters. 71(19). 2788–2790. 5 indexed citations
19.
Bolkhovityanov, Yu. B., et al.. (1996). Shear deformation potential of elastically strained InGaP/GaAs(111)B and InGaAsP/GaAs(111)B films. Semiconductor Science and Technology. 11(12). 1847–1849. 3 indexed citations
20.
Alperovich, V. L., A. S. Jaroshevich, H. E. Scheibler, & A. S. Terekhov. (1994). Determination of built-in electric fields in delta-doped GaAs structures by phase-sensitive photoreflectance. Solid-State Electronics. 37(4-6). 657–660. 42 indexed citations

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