G.A. Armstrong

1.8k total citations
98 papers, 1.4k citations indexed

About

G.A. Armstrong is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, G.A. Armstrong has authored 98 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 83 papers in Electrical and Electronic Engineering, 13 papers in Biomedical Engineering and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in G.A. Armstrong's work include Advancements in Semiconductor Devices and Circuit Design (60 papers), Semiconductor materials and devices (57 papers) and Silicon Carbide Semiconductor Technologies (22 papers). G.A. Armstrong is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (60 papers), Semiconductor materials and devices (57 papers) and Silicon Carbide Semiconductor Technologies (22 papers). G.A. Armstrong collaborates with scholars based in United Kingdom, India and United States. G.A. Armstrong's co-authors include Abhinav Kranti, C. K. Maiti, J. R. Ayres, S. D. Brotherton, Dipankar Ghosh, Mukta Singh Parihar, Suresh Uppal, M. S. Alam, A. S. Greenberg and Jean‐Pierre Raskin and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

G.A. Armstrong

90 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G.A. Armstrong United Kingdom 23 1.3k 213 128 105 29 98 1.4k
T. Schulz Germany 23 1.2k 0.9× 140 0.7× 97 0.8× 233 2.2× 4 0.1× 76 1.5k
F. Andrieu France 20 1.5k 1.1× 273 1.3× 101 0.8× 170 1.6× 4 0.1× 128 1.6k
Steven H. Voldman United States 23 1.7k 1.3× 59 0.3× 49 0.4× 63 0.6× 6 0.2× 133 1.8k
Artur Jachimowicz Austria 11 288 0.2× 192 0.9× 195 1.5× 28 0.3× 6 0.2× 19 411
Kimmo Kokkonen Finland 15 323 0.2× 420 2.0× 277 2.2× 54 0.5× 16 0.6× 47 593
T. L. Linnik Ukraine 12 177 0.1× 118 0.6× 293 2.3× 78 0.7× 9 0.3× 33 403
C. B. Fleddermann United States 15 441 0.3× 83 0.4× 180 1.4× 139 1.3× 5 0.2× 41 588
Jens Reermann Germany 13 214 0.2× 286 1.3× 148 1.2× 249 2.4× 22 0.8× 22 604
Didit Yudistira Belgium 14 328 0.2× 244 1.1× 305 2.4× 140 1.3× 7 0.2× 47 550
Ben-Yuan Gu China 13 294 0.2× 180 0.8× 416 3.3× 65 0.6× 3 0.1× 52 631

Countries citing papers authored by G.A. Armstrong

Since Specialization
Citations

This map shows the geographic impact of G.A. Armstrong's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G.A. Armstrong with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G.A. Armstrong more than expected).

Fields of papers citing papers by G.A. Armstrong

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G.A. Armstrong. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G.A. Armstrong. The network helps show where G.A. Armstrong may publish in the future.

Co-authorship network of co-authors of G.A. Armstrong

This figure shows the co-authorship network connecting the top 25 collaborators of G.A. Armstrong. A scholar is included among the top collaborators of G.A. Armstrong based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G.A. Armstrong. G.A. Armstrong is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Parihar, Mukta Singh, Dipankar Ghosh, G.A. Armstrong, & Abhinav Kranti. (2012). Bipolar snapback in junctionless transistors for capacitorless dynamic random access memory. Applied Physics Letters. 101(26). 26 indexed citations
3.
Alam, M. S., et al.. (2011). Design of low noise Amplifier using 90nm gate underlap SOI MOSFET for millimeter wave applications. 19. 308–311. 2 indexed citations
4.
Kranti, Abhinav, et al.. (2010). Analog/RF performance of sub-100 nm SOI MOSFETs with non-classical gate-source/drain underlap channel design. Ghent University Academic Bibliography (Ghent University). 24. 45–48. 13 indexed citations
5.
Kranti, Abhinav & G.A. Armstrong. (2009). High temperature performance of OTA with non-ideal Double Gate SOI MOSFETs. 8. 1–2. 1 indexed citations
6.
Kranti, Abhinav, et al.. (2009). Underlap channel UTBB MOSFETs for low—power analog/RF applications. Ghent University Academic Bibliography (Ghent University). 173–176. 9 indexed citations
7.
Armstrong, G.A., et al.. (2007). Optimisation of trench isolated bipolar transistors on SOI substrates by 3D electro-thermal simulations. Solid-State Electronics. 51(9). 1221–1228. 1 indexed citations
8.
Armstrong, G.A., et al.. (2007). Scaling issues for analogue circuits using Double Gate SOI transistors. Solid-State Electronics. 51(2). 320–327. 10 indexed citations
9.
Maiti, C. K. & G.A. Armstrong. (2007). Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits. Institution of Engineering and Technology eBooks. 8 indexed citations
10.
Kranti, Abhinav & G.A. Armstrong. (2007). Comparative analysis of nanoscale MOS device architectures for RF applications. Semiconductor Science and Technology. 22(5). 481–491. 25 indexed citations
11.
Blokland, Willem, et al.. (2006). SNS Ring and RTBT Beam Current Monitor. AIP conference proceedings. 868. 238–245. 2 indexed citations
12.
Kranti, Abhinav & G.A. Armstrong. (2006). Engineering source/drain extension regions in nanoscale double gate (DG) SOI MOSFETs: Analytical model and design considerations. Solid-State Electronics. 50(3). 437–447. 60 indexed citations
13.
Alam, M. S., et al.. (2003). Non‐linear modeling of 0.18‐μM CMOS using neural network. Microwave and Optical Technology Letters. 37(1). 53–56. 3 indexed citations
16.
Armstrong, G.A., S. D. Brotherton, & J. R. Ayres. (1996). A comparison of the kink effect in polysilicon thin film transistors and silicon on insulator transistors. Solid-State Electronics. 39(9). 1337–1346. 37 indexed citations
17.
Armstrong, G.A., et al.. (1992). Simulation of ultra thin film SOI transistors using a non-local ballistic model for impact ionisation. Solid-State Electronics. 35(12). 1761–1770. 4 indexed citations
18.
Armstrong, G.A., et al.. (1979). Boundary-limited thermal conductivity of hcpHe4. Physical review. B, Condensed matter. 20(3). 1061–1064. 21 indexed citations
19.
Armstrong, G.A. & Mairéad Butler. (1976). Engineering design and evaluation of s.a.w. pulse compression filters with low time sidelobes. Radio and Electronic Engineer. 46(5). 221–221. 6 indexed citations
20.
Armstrong, G.A., et al.. (1971). Pinch-off in insulated-gate field effect transistors. Solid-State Electronics. 14(8). 760–764. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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