G. Schumm

429 total citations
22 papers, 375 citations indexed

About

G. Schumm is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, G. Schumm has authored 22 papers receiving a total of 375 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in G. Schumm's work include Thin-Film Transistor Technologies (21 papers), Silicon and Solar Cell Technologies (17 papers) and Silicon Nanostructures and Photoluminescence (16 papers). G. Schumm is often cited by papers focused on Thin-Film Transistor Technologies (21 papers), Silicon and Solar Cell Technologies (17 papers) and Silicon Nanostructures and Photoluminescence (16 papers). G. Schumm collaborates with scholars based in Germany, United States and Poland. G. Schumm's co-authors include G.H. Bauer, R. A. Street, W. B. Jackson, K. Nitsch, E. Lotter, M.B. Schubert, Christoph E. Nebel, Marcel Schubert, R. Brüggemann and C. Main and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Non-Crystalline Solids.

In The Last Decade

G. Schumm

20 papers receiving 356 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
G. Schumm Germany	10	362	262	47	25	18	22	375
Mitsuo Matsumura Japan	8	343 0.9×	286 1.1×	26 0.6×	20 0.8×	18 1.0×	12	372
H. Kida Japan	9	324 0.9×	241 0.9×	61 1.3×	16 0.6×	10 0.6×	22	332
O. Štika Czechia	6	382 1.1×	308 1.2×	30 0.6×	27 1.1×	19 1.1×	11	405
Brent P. Nelson United States	12	340 0.9×	295 1.1×	15 0.3×	12 0.5×	14 0.8×	25	356
N. Ibaraki Japan	8	330 0.9×	240 0.9×	54 1.1×	9 0.4×	11 0.6×	14	351
Hisaki Tarui Japan	13	409 1.1×	305 1.2×	44 0.9×	12 0.5×	5 0.3×	43	426
Dusit Kruangam Japan	12	398 1.1×	332 1.3×	32 0.7×	5 0.2×	19 1.1×	24	412
Mike Oertel Germany	6	306 0.8×	280 1.1×	19 0.4×	11 0.4×	3 0.2×	10	348
Yannick Wimmer Austria	12	571 1.6×	105 0.4×	51 1.1×	5 0.2×	13 0.7×	30	598
E. Gourvest France	6	188 0.5×	162 0.6×	16 0.3×	25 1.0×	7 0.4×	12	219

Countries citing papers authored by G. Schumm

Since Specialization

Citations

This map shows the geographic impact of G. Schumm's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Schumm with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Schumm more than expected).

Fields of papers citing papers by G. Schumm

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Schumm. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Schumm. The network helps show where G. Schumm may publish in the future.

Co-authorship network of co-authors of G. Schumm

This figure shows the co-authorship network connecting the top 25 collaborators of G. Schumm. A scholar is included among the top collaborators of G. Schumm based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Schumm. G. Schumm is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Schumm, G. & G.H. Bauer. (2002). Equilibrium and light-induced gap-state distribution in a-Si:H. 144. 1225–1230.

Schumm, G.. (1995). Common origin of thermal and light-induced defect kinetics in amorphous silicon. Applied Physics Letters. 66(20). 2706–2708. 6 indexed citations

Schumm, G.. (1994). Chemical equilibrium description of stable and metastable defect structures ina-Si:H. Physical review. B, Condensed matter. 49(4). 2427–2442. 48 indexed citations

Schumm, G., W. B. Jackson, & R. A. Street. (1993). Nonequilibrium occupancy of tail states and defects ina-Si:H: Implications for defect structure. Physical review. B, Condensed matter. 48(19). 14198–14207. 33 indexed citations

Schumm, G.. (1993). The defect-pool model and charged defects in amorphous silicon. Journal of Non-Crystalline Solids. 164-166. 317–322. 17 indexed citations

Schumm, G., E. Lotter, & G.H. Bauer. (1992). Charged dangling bonds in undoped amorphous silicon. Applied Physics Letters. 60(26). 3262–3264. 19 indexed citations

Schumm, G., et al.. (1992). Defect Kinetics and Saturation in Amorphous Silicon-Germanium Alloys. MRS Proceedings. 258. 8 indexed citations

Bauer, G.H., et al.. (1992). Defect pool gap-state distribution in a-Si:H in equilibrium and under photoexcitation. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1729. 124–124. 1 indexed citations

Schubert, M.B., G. Schumm, E. Lotter, Κ. Eberhardt, & G.H. Bauer. (1991). Defect Structure and Network Disorder in Boron Doped Amorphous Silicon. MRS Proceedings. 219.

10.

Brüggemann, R., et al.. (1991). Simulation of modulated photoconductivity in sandwich configuration. Journal of Non-Crystalline Solids. 137-138. 359–362. 5 indexed citations

11.

Schumm, G. & G.H. Bauer. (1991). Equilibrium and non-equilibrium gap state distribution in a-Si:H. Journal of Non-Crystalline Solids. 137-138. 315–318. 27 indexed citations

12.

Schumm, G. & G.H. Bauer. (1991). Thermodynamical equilibrium gap-state distribution in undoped a-Si: H. Philosophical Magazine B. 64(4). 515–527. 44 indexed citations

13.

Schumm, G. & G.H. Bauer. (1990). The Influence of Interfaces on the Gap State Distribution of Undoped a-Si:H. MRS Proceedings. 192. 4 indexed citations

14.

Schumm, G. & G.H. Bauer. (1989). Defect structure and stability of a-Si:H by modulated photocurrent studies. Journal of Non-Crystalline Solids. 114. 660–662. 9 indexed citations

15.

Schumm, G. & G.H. Bauer. (1989). Spatially resolved and energy-resolved defect kinetics ina-Si:H: A comprehensive study by phase-shift analysis of modulated photocurrents. Physical review. B, Condensed matter. 39(8). 5311–5326. 75 indexed citations

16.

Schumm, G. & G.H. Bauer. (1989). Defect Distribution and Defect Kinetics in Undoped and Boron-Doped A-Si:H Investigated by Modulated Photocurrents. MRS Proceedings. 149. 1 indexed citations

17.

Bauer, G.H., Christoph E. Nebel, M.B. Schubert, & G. Schumm. (1989). Band Tailing and Transport in a-SiGe:H-Alloys. MRS Proceedings. 149. 16 indexed citations

18.

Schumm, G., K. Nitsch, M.B. Schubert, & G.H. Bauer. (1988). Gap State Distribution and Interface States in a-Si:H and a-SiGe:H by Modulated Photocurrent. MRS Proceedings. 118. 5 indexed citations

19.

Schumm, G., K. Nitsch, & G.H. Bauer. (1988). Gap-state distribution in a-Si:H by modulated photocurrent: Shallow-state-deep-state conversion and temperature shift of the electron-transport path. Philosophical Magazine B. 58(4). 411–420. 19 indexed citations

20.

Schubert, Marcel, et al.. (1987). Electronic and optical effects of boron doping by plasma assisted diffusion in a-SiC : H. Journal of Non-Crystalline Solids. 97-98. 1415–1418. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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