G. Rajeswaran

559 total citations
46 papers, 440 citations indexed

About

G. Rajeswaran is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, G. Rajeswaran has authored 46 papers receiving a total of 440 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 15 papers in Materials Chemistry. Recurrent topics in G. Rajeswaran's work include Silicon and Solar Cell Technologies (27 papers), Semiconductor materials and interfaces (20 papers) and Thin-Film Transistor Technologies (20 papers). G. Rajeswaran is often cited by papers focused on Silicon and Solar Cell Technologies (27 papers), Semiconductor materials and interfaces (20 papers) and Thin-Film Transistor Technologies (20 papers). G. Rajeswaran collaborates with scholars based in United States, India and Japan. G. Rajeswaran's co-authors include K. B. Kahen, P. E. Vanier, D. L. Peterson, D. J. Lawrence, F. J. Kampas, Wayne A. Anderson, Reed R. Corderman, Hisakazu Takahashi, T. K. Hatwar and J. Taftø and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

G. Rajeswaran

44 papers receiving 413 citations

Peers

G. Rajeswaran
Gordon Wood Anderson United States
Helmut Mäckel Australia
Kevin M. Brunson United Kingdom
Y. Hida Japan
E. Daub Germany
M. Janai Israel
Waqar Mahmood Pakistan
Gordon Wood Anderson United States
G. Rajeswaran
Citations per year, relative to G. Rajeswaran G. Rajeswaran (= 1×) peers Gordon Wood Anderson

Countries citing papers authored by G. Rajeswaran

Since Specialization
Citations

This map shows the geographic impact of G. Rajeswaran's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Rajeswaran with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Rajeswaran more than expected).

Fields of papers citing papers by G. Rajeswaran

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Rajeswaran. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Rajeswaran. The network helps show where G. Rajeswaran may publish in the future.

Co-authorship network of co-authors of G. Rajeswaran

This figure shows the co-authorship network connecting the top 25 collaborators of G. Rajeswaran. A scholar is included among the top collaborators of G. Rajeswaran based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Rajeswaran. G. Rajeswaran is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Karthikeyan, S., et al.. (2011). 2-Azidomethyl-3-methyl-1-phenylsulfonyl-1H-indole. Acta Crystallographica Section E Structure Reports Online. 67(9). o2245–o2246. 1 indexed citations
3.
Karthikeyan, S., et al.. (2011). (E)-3-(2-Nitrophenyl)-1-{1-phenylsulfonyl-2-[(phenylsulfonyl)methyl]-1H-indol-3-yl}prop-2-en-1-one. Acta Crystallographica Section E Structure Reports Online. 68(1). o9–o9.
4.
Hatwar, T. K., Jeffrey Spindler, Ralph H. Young, et al.. (2004). High-efficiency white OLEDs based on small molecules. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5214. 233–233. 18 indexed citations
5.
Rajeswaran, G., Masahiro Itoh, Kiyoshi Yoneda, et al.. (2000). 40.1:Active Matrix Low Temperature Poly-Si TFT/OLED Full Color Displays:Development States(2-2.セッション40 OLED DEVICES)(Society for Information Display 00 Report). 24(42). 66. 1 indexed citations
6.
Jiao, K.L., Ribhu Sharma, Wayne A. Anderson, et al.. (1991). Microstructural analysis of Pd-based ohmic contacts to p-type GaAs. Journal of materials research/Pratt's guide to venture capital sources. 6(3). 553–559. 3 indexed citations
7.
Kahen, K. B., et al.. (1991). Mechanism for zinc diffusion in n-type gallium arsenide. Journal of Applied Physics. 70(4). 2464–2466. 9 indexed citations
8.
Kahen, K. B., D. L. Peterson, & G. Rajeswaran. (1990). Effect of ion implantation dose on the interdiffusion of GaAs-AlGaAs interfaces. Journal of Applied Physics. 68(5). 2087–2090. 16 indexed citations
9.
Braunstein, G., et al.. (1989). Influence of the Temperature of Implantation on the Morphology of Defects in MeV Implanted GaAs.. MRS Proceedings. 147. 2 indexed citations
10.
Chen, Samuel, et al.. (1989). Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices. MRS Proceedings. 147. 2 indexed citations
11.
Kahen, K. B., D. L. Peterson, G. Rajeswaran, & D. J. Lawrence. (1989). Properties of Ga vacancies in AlGaAs materials. Applied Physics Letters. 55(7). 651–653. 51 indexed citations
12.
Rajeswaran, G., D. J. Lawrence, S.-Tong Lee, & K. B. Kahen. (1988). Rapid Thermal Techniques for Zinc Diffusion and Metal/Gallium Arsenide Alloying to Produce Low Resistance Ohmic Contacts. MRS Proceedings. 144. 2 indexed citations
13.
Braunstein, G., et al.. (1988). Relationship Between Electrical Activation and Residual Defects in MeV Si Implanted GaAs.. MRS Proceedings. 144. 2 indexed citations
14.
Taftø, J., G. Rajeswaran, & P. E. Vanier. (1986). The local structure of amorphous SnO2 by electron microscope techniques. Journal of Applied Physics. 60(2). 602–606. 11 indexed citations
15.
Rajeswaran, G., P. E. Vanier, Reed R. Corderman, & F. J. Kampas. (1985). Improved blue response and efficiency of A-Si:H solar cells deposited from disilane using a dual-chamber plasma system. NASA STI/Recon Technical Report N. 86. 10649. 1 indexed citations
16.
Rajeswaran, G., P. E. Vanier, Reed R. Corderman, & F. J. Kampas. (1985). Dual-Chamber Plasma Deposition of a-Si:H Solar Cells at High Rates Using Disilane. MRS Proceedings. 49. 1 indexed citations
17.
Rajeswaran, G., et al.. (1982). Grain boundary effects and Li passivation in polycrystalline silicon. 543–547.
18.
Rajeswaran, G., et al.. (1982). Stability Analysis of Cr-MIS Solar Cells. IEEE Transactions on Reliability. R-31(3). 276–280. 4 indexed citations
19.
Rao, V. Jayathirtha, et al.. (1981). Grain boundary effects in poly-Si as determined by low frequency capacitance and conductance data. physica status solidi (a). 67(2). 709–715. 1 indexed citations
20.
Rajkanan, K., Wayne A. Anderson, & G. Rajeswaran. (1981). Loss mechanism analysis in single-crystal and polycrystalline silicon MIS solar cells to produce 13% efficiency. Solar Cells. 3(1). 17–25. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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