G. Parat

614 total citations
33 papers, 422 citations indexed

About

G. Parat is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, G. Parat has authored 33 papers receiving a total of 422 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 26 papers in Biomedical Engineering and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in G. Parat's work include Acoustic Wave Resonator Technologies (25 papers), Mechanical and Optical Resonators (12 papers) and Advanced MEMS and NEMS Technologies (11 papers). G. Parat is often cited by papers focused on Acoustic Wave Resonator Technologies (25 papers), Mechanical and Optical Resonators (12 papers) and Advanced MEMS and NEMS Technologies (11 papers). G. Parat collaborates with scholars based in France, Switzerland and India. G. Parat's co-authors include P. Ancey, Pierre Vincent, C. Billard, Claude Muller, Jean‐François Carpentier, Fabien Ndagijimana, M.-A. Dubois, R.Y. Fillit, Philippe Benech and Alexandre Reinhardt and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Solid-State Circuits.

In The Last Decade

G. Parat

31 papers receiving 397 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Parat France 11 332 292 135 88 71 33 422
C. Billard France 9 250 0.8× 220 0.8× 123 0.9× 42 0.5× 29 0.4× 23 312
Rashed Mahameed United States 10 314 0.9× 296 1.0× 200 1.5× 73 0.8× 73 1.0× 19 423
Pietro Simeoni United States 10 285 0.9× 177 0.6× 106 0.8× 106 1.2× 64 0.9× 36 323
A. Pezous Switzerland 7 324 1.0× 217 0.7× 123 0.9× 74 0.8× 135 1.9× 14 418
Jeronimo Segovia-Fernandez United States 14 579 1.7× 458 1.6× 399 3.0× 101 1.1× 91 1.3× 45 658
Ken-ya Hashimoto China 11 417 1.3× 224 0.8× 173 1.3× 131 1.5× 39 0.5× 58 444
Masafumi Iwaki Japan 12 342 1.0× 224 0.8× 180 1.3× 85 1.0× 68 1.0× 23 374
Norio Nakajima Japan 10 379 1.1× 288 1.0× 155 1.1× 201 2.3× 58 0.8× 21 506
Anming Gao United States 15 537 1.6× 419 1.4× 299 2.2× 181 2.1× 91 1.3× 47 680
Masatsune Yamaguchi Japan 13 572 1.7× 290 1.0× 220 1.6× 243 2.8× 44 0.6× 70 605

Countries citing papers authored by G. Parat

Since Specialization
Citations

This map shows the geographic impact of G. Parat's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Parat with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Parat more than expected).

Fields of papers citing papers by G. Parat

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Parat. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Parat. The network helps show where G. Parat may publish in the future.

Co-authorship network of co-authors of G. Parat

This figure shows the co-authorship network connecting the top 25 collaborators of G. Parat. A scholar is included among the top collaborators of G. Parat based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Parat. G. Parat is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Veillerot, M., et al.. (2017). Reliability improvements of TiN/Al2O3/TiN for linear high voltage metal–insulator–metal capacitors using an optimized thermal treatment. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 35(1). 3 indexed citations
2.
Walke, Pravin S., et al.. (2014). Giant dielectric constant in TiO2/Al2O3 nanolaminates grown on doped silicon substrate by pulsed laser deposition. Journal of Applied Physics. 115(9). 22 indexed citations
3.
Defaÿ, Emmanuel, et al.. (2011). Tunability of Alluminum Nitride Acoustic Resonators: A Phenomenological Approach. IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control. 58(12). 2516–2520. 20 indexed citations
4.
Gillot, C., et al.. (2010). Low cost Thin Film packaging for MEMS over molded. 1–4. 3 indexed citations
5.
Mercier, Denis, et al.. (2009). Dielectrical properties of metal-insulator-metal aluminum nitride structures: Measurement and modeling. Journal of Applied Physics. 105(4). 37 indexed citations
6.
Fillit, R.Y., et al.. (2008). Self-heating study of bulk acoustic wave resonators under high RF power. IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control. 55(1). 139–147. 25 indexed citations
7.
Parat, G., et al.. (2008). Stopband filters built in the BAW technology [Application Notes]. IEEE Microwave Magazine. 9(5). 104–116. 10 indexed citations
8.
Benech, Philippe, et al.. (2008). Modeling for temperature compensation and temperature characterizations of BAW resonators at GHz frequencies. IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control. 55(2). 421–430. 39 indexed citations
9.
10.
Giry, Alexandre, et al.. (2008). Full-Duplex Receiver And PA Integration With BAW Devices. 1 a. 9–12. 2 indexed citations
11.
Vincent, Pierre, et al.. (2008). A 1V 220MHz-Tuning-Range 2.2GHz VCO Using a BAW Resonator. 478–629. 7 indexed citations
12.
Gillot, C., et al.. (2007). Wafer Level Thin Film Encapsulation for BAW RF MEMS. 605–609. 17 indexed citations
13.
Reinhardt, Alexandre, et al.. (2007). P1I-4 Simulation of BAW Resonators Frequency Adjustment. 29. 1444–1447. 14 indexed citations
14.
Ndagijimana, Fabien, et al.. (2006). Solidly mounted resonators aging under harsh environmental conditions. Journal of Physics Conference Series. 34. 668–673. 5 indexed citations
15.
Fillit, R.Y., et al.. (2006). BAW resonators reliability in the GHz range. Proceedings of the Annual Conference of the IEEE Industrial Electronics Society. 1. 3133–3138. 6 indexed citations
16.
Parat, G., et al.. (2005). A Tunable Bandpass BAW-Filter Architecture and Its Application to WCDMA Filter. IEEE MTT-S International Microwave Symposium Digest, 2005.. 221–224. 6 indexed citations
17.
Carpentier, Jean‐François, Pierre Vincent, C. Billard, et al.. (2005). Monolithic Above-IC Resonator Technology for Integrated Architectures in Mobile and Wireless Communication. IEEE Journal of Solid-State Circuits. 41(1). 7–16. 71 indexed citations
18.
Cathelin, Andreia, P. Garcia, P. Ancey, et al.. (2005). A SiGe:C BiCMOS WCDMA zero-IF RF front-end using an above-IC BAW filter. 394–395. 30 indexed citations
19.
Dubois, M.-A., C. Billard, Claude Muller, G. Parat, & Pierre Vincent. (2005). Integration of high-Q BAW resonators and filters above IC. 392–394. 44 indexed citations
20.
Parat, G., et al.. (1995). Mechanical Behaviour of Two Sorts of MCM Structures. MRS Proceedings. 390.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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