Fenning Liu

422 total citations
18 papers, 317 citations indexed

About

Fenning Liu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Artificial Intelligence. According to data from OpenAlex, Fenning Liu has authored 18 papers receiving a total of 317 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 10 papers in Materials Chemistry and 1 paper in Artificial Intelligence. Recurrent topics in Fenning Liu's work include Ferroelectric and Negative Capacitance Devices (17 papers), Advanced Memory and Neural Computing (13 papers) and Semiconductor materials and devices (11 papers). Fenning Liu is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (17 papers), Advanced Memory and Neural Computing (13 papers) and Semiconductor materials and devices (11 papers). Fenning Liu collaborates with scholars based in China, Germany and South Korea. Fenning Liu's co-authors include Yan Liu, Yue Peng, Genquan Han, Wenwu Xiao, Yue Hao, Fuchun Zhang, Junfeng Yan, Xiao Yu, Sifan Chen and Jiangni Yun and has published in prestigious journals such as SHILAP Revista de lepidopterología, ACS Applied Materials & Interfaces and Journal of Colloid and Interface Science.

In The Last Decade

Fenning Liu

17 papers receiving 310 citations

Peers

Fenning Liu

EEE

RESE

CMN

Neha Mishra India

Roman R. Khakimov Russia

Yasir Hassan South Korea

Lance Kavalsky United States

Tianhua Ren Singapore

Ashish Sharma India

Dengke Cheng China

Bor Li Germany

Yaochen Sheng China

Kaustubh Basu Canada

Neha Mishra India

Fenning Liu

208 ×0.8

EEE

126 ×0.7

80 ×1.1

RESE

20 ×1.4

4 ×0.4

CMN

Citations per year, relative to Fenning Liu Fenning Liu (= 1×) peers Neha Mishra

Countries citing papers authored by Fenning Liu

Since Specialization

Citations

This map shows the geographic impact of Fenning Liu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Fenning Liu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Fenning Liu more than expected).

Fields of papers citing papers by Fenning Liu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Fenning Liu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Fenning Liu. The network helps show where Fenning Liu may publish in the future.

Co-authorship network of co-authors of Fenning Liu

This figure shows the co-authorship network connecting the top 25 collaborators of Fenning Liu. A scholar is included among the top collaborators of Fenning Liu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Fenning Liu. Fenning Liu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

18 of 18 papers shown

Peng, Yue, Wenwu Xiao, Hao Jiang, et al.. (2024). HfO₂–ZrO₂ Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed. ACS Applied Materials & Interfaces. 16(2). 2954–2963. 17 indexed citations

Peng, Yue, Wenwu Xiao, Fenning Liu, et al.. (2023). HfO₂–ZrO₂ Superlattice Ferroelectric Field-Effect Transistor With Improved Endurance and Fatigue Recovery Performance. IEEE Transactions on Electron Devices. 70(7). 3979–3982. 20 indexed citations

Peng, Yue, Fenning Liu, Ni Zhong, et al.. (2023). Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO₂ Capacitors. IEEE Transactions on Electron Devices. 70(7). 3788–3793. 4 indexed citations

Liu, Fenning, Yue Peng, Wenwu Xiao, et al.. (2023). Impact of multi-domain effect on the effective carrier mobility of ferroelectric field-effect transistor. Nanotechnology. 35(9). 95706–95706.

Liu, Fenning, Yue Peng, Yan Liu, et al.. (2023). Performance improvement of a tunnel junction memristor with amorphous insulator film. Discover Nano. 18(1). 20–20. 1 indexed citations

Liu, Fenning, Yue Peng, Wenwu Xiao, et al.. (2023). Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor. Science China Information Sciences. 66(6). 1 indexed citations

Peng, Yue, Wenwu Xiao, Fenning Liu, et al.. (2023). A Comparative Study on the Polarization, Reliability, and Switching Dynamics of HfO₂-ZrO₂-HfO₂ and ZrO₂-HfO₂-ZrO₂ Superlattice Ferroelectric Films. IEEE Transactions on Electron Devices. 70(4). 1802–1807. 9 indexed citations

Peng, Yue, Wenwu Xiao, Yu Ma, et al.. (2022). Effect of thickness scaling on the switching dynamics of ferroelectric HfO2–ZrO2 capacitors. Ceramics International. 48(19). 28489–28495. 12 indexed citations

Peng, Yue, Qiuxia Wu, Fenning Liu, et al.. (2022). HfZrO_x Hybrid DRAM/FRAM Arrays Featuring Excellent Endurance and Low Latency. IEEE Electron Device Letters. 43(12). 2101–2104. 3 indexed citations

10.

Han, Genquan, Yue Peng, Huan Liu, et al.. (2022). Ferroelectric Devices for Intelligent Computing. SHILAP Revista de lepidopterología. 2022. 11 indexed citations

11.

Peng, Yue, Wenwu Xiao, Yan Liu, et al.. (2021). HfO₂-ZrO₂ Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability. IEEE Electron Device Letters. 43(2). 216–219. 63 indexed citations

12.

Peng, Yue, Guoqing Zhang, Wenwu Xiao, et al.. (2021). Ferroelectric-Like Non-Volatile FET With Amorphous Gate Insulator for Supervised Learning Applications. IEEE Journal of the Electron Devices Society. 9. 1145–1150. 7 indexed citations

13.

Liu, Fenning, Yue Peng, Yan Liu, et al.. (2021). Amorphous ZrO₂ Tunnel Junction Memristor With a Tunneling Electroresistance Ratio Above 400. IEEE Electron Device Letters. 42(5). 696–699. 7 indexed citations

14.

Zhang, Guoqing, Yue Peng, Wenwu Xiao, et al.. (2021). Synaptic Plasticity in Novel Non-Volatile FET with Amorphous Gate Insulator Enabled by Oxygen Vacancy Related Dipoles. 1–3. 2 indexed citations

15.

Peng, Yue, Genquan Han, Fenning Liu, et al.. (2020). Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory. Nanoscale Research Letters. 15(1). 134–134. 24 indexed citations

16.

Peng, Yue, Wenwu Xiao, Fenning Liu, et al.. (2020). Non-Volatile Field-Effect Transistors Enabled by Oxygen Vacancy-Related Dipoles for Memory and Synapse Applications. IEEE Transactions on Electron Devices. 67(9). 3632–3636. 16 indexed citations

17.

Peng, Yue, Wenwu Xiao, Genquan Han, et al.. (2020). Memory Behavior of an Al₂O₃ Gate Dielectric Non-Volatile Field-Effect Transistor. IEEE Electron Device Letters. 41(9). 1340–1343. 25 indexed citations

18.

Chen, Sifan, Fenning Liu, Manzhang Xu, et al.. (2019). First-principles calculations and experimental investigation on SnO2@ZnO heterojunction photocatalyst with enhanced photocatalytic performance. Journal of Colloid and Interface Science. 553. 613–621. 95 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact