Faouzi Nasri

541 total citations
31 papers, 357 citations indexed

About

Faouzi Nasri is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Mechanical Engineering. According to data from OpenAlex, Faouzi Nasri has authored 31 papers receiving a total of 357 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Materials Chemistry, 17 papers in Electrical and Electronic Engineering and 8 papers in Mechanical Engineering. Recurrent topics in Faouzi Nasri's work include Thermal properties of materials (23 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Heat Transfer and Optimization (8 papers). Faouzi Nasri is often cited by papers focused on Thermal properties of materials (23 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Heat Transfer and Optimization (8 papers). Faouzi Nasri collaborates with scholars based in Tunisia, Saudi Arabia and United States. Faouzi Nasri's co-authors include Hafedh Belmabrouk, Mohamed Fadhel Ben Aissa, Amen Allah Guizani, Mohamed Hichem Gazzah, Abdessalem Ben Haj Ali, Amenallah Guizani, Irina Graur, Fraj Echouchene, Mohamed Bouzid and Abdullah Bajahzar and has published in prestigious journals such as International Journal of Hydrogen Energy, Journal of Physics D Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Faouzi Nasri

30 papers receiving 339 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Faouzi Nasri Tunisia 13 279 144 90 87 53 31 357
Shin Kikuchi Japan 10 158 0.6× 38 0.3× 128 1.4× 41 0.5× 50 0.9× 63 329
Janak Tiwari United States 10 213 0.8× 116 0.8× 70 0.8× 41 0.5× 41 0.8× 14 349
Ziqi Tang China 11 129 0.5× 101 0.7× 33 0.4× 47 0.5× 35 0.7× 39 271
Keiko Ikoma Japan 9 271 1.0× 127 0.9× 80 0.9× 78 0.9× 35 0.7× 15 362
Luciana W. da Silva United States 5 292 1.0× 66 0.5× 88 1.0× 163 1.9× 18 0.3× 7 353
Shugo Miyake Japan 11 180 0.6× 81 0.6× 96 1.1× 49 0.6× 38 0.7× 46 301
M. Zergoug Algeria 9 164 0.6× 123 0.9× 165 1.8× 25 0.3× 12 0.2× 40 367
Xiaonan Wang United States 9 288 1.0× 66 0.5× 18 0.2× 53 0.6× 28 0.5× 17 369
Renhong Liang China 8 254 0.9× 80 0.6× 56 0.6× 48 0.6× 77 1.5× 17 315
Jia-Hong Ke United States 14 292 1.0× 295 2.0× 315 3.5× 17 0.2× 57 1.1× 34 603

Countries citing papers authored by Faouzi Nasri

Since Specialization
Citations

This map shows the geographic impact of Faouzi Nasri's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Faouzi Nasri with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Faouzi Nasri more than expected).

Fields of papers citing papers by Faouzi Nasri

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Faouzi Nasri. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Faouzi Nasri. The network helps show where Faouzi Nasri may publish in the future.

Co-authorship network of co-authors of Faouzi Nasri

This figure shows the co-authorship network connecting the top 25 collaborators of Faouzi Nasri. A scholar is included among the top collaborators of Faouzi Nasri based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Faouzi Nasri. Faouzi Nasri is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
3.
Nasri, Faouzi, et al.. (2023). Nanotechnology and Quantum Dot Lasers. Journal of Computer Science and Technology Studies. 5(1). 45–51. 2 indexed citations
4.
Nasri, Faouzi, et al.. (2023). Numerical Analysis of Self-Heating Effect in HEMT Transistors. 1–5. 1 indexed citations
5.
Nasri, Faouzi, et al.. (2023). Temperature Effects on Electrical Response of FinFET Transistors in the Static Regime. IEEE Transactions on Electron Devices. 70(4). 1595–1600. 4 indexed citations
6.
Almoneef, Maha M., et al.. (2022). Optimization of the heat conduction process in a double-gate MOSFET using an enhanced electrothermal model. Journal of Computational Electronics. 21(6). 1275–1281. 2 indexed citations
8.
Nasri, Faouzi, et al.. (2021). Investigation of nanoscale heat transport in sub-10 nm carbon nanotube field-effect transistors based on the finite element method. Thermal Science and Engineering Progress. 25. 100938–100938. 7 indexed citations
9.
Nasri, Faouzi, Mohamed Fadhel Ben Aissa, Youssef Trabelsi, et al.. (2021). Influence of Joule effect on thermal response of nano FinFET transistors. Superlattices and Microstructures. 156. 106980–106980. 5 indexed citations
10.
Nasri, Faouzi, et al.. (2020). Design optimization of nanoscale electrothermal transport in 10 nm SOI FinFET technology node. Journal of Physics D Applied Physics. 53(49). 495103–495103. 14 indexed citations
11.
Nasri, Faouzi, et al.. (2020). Analysis of the Ultrafast Transient Heat Transport in Sub 7-nm SOI FinFETs Technology Nodes Using Phonon Hydrodynamic Equation. IEEE Transactions on Electron Devices. 68(1). 10–16. 28 indexed citations
12.
Aissa, Mohamed Fadhel Ben, et al.. (2019). Thermal transport in graphene field-effect transistors with ultrashort channel length. Superlattices and Microstructures. 128. 265–273. 25 indexed citations
13.
Nasri, Faouzi, et al.. (2018). Modeling Thermal Performance of Nano-GNRFET Transistors Using Ballistic-Diffusive Equation. IEEE Transactions on Electron Devices. 65(4). 1611–1616. 32 indexed citations
14.
Nasri, Faouzi, Mohamed Fadhel Ben Aissa, & Hafedh Belmabrouk. (2017). Nanoheat Conduction Performance of Black Phosphorus Field-Effect Transistor. IEEE Transactions on Electron Devices. 64(6). 2765–2769. 10 indexed citations
15.
Nasri, Faouzi, Mohamed Fadhel Ben Aissa, & Hafedh Belmabrouk. (2017). Nonlinear Electrothermal Model for Investigation of Heat Transfer Process in a 22-nm FD-SOI MOSFET. IEEE Transactions on Electron Devices. 64(4). 1461–1466. 21 indexed citations
16.
Abdallah, Mariem Ben, et al.. (2017). Computer method for tracking the centerline curve of the human retinal blood vessel. 38. 1–6. 3 indexed citations
17.
Nasri, Faouzi & Mohamed Atri. (2017). Channel length effect on heat transfer process in nano MOSFETs. 1–4. 3 indexed citations
18.
Bouzid, Mohamed, Faouzi Nasri, & Hafedh Belmabrouk. (2016). Numerical Study of Electro-Chemical System for Enzymatic Activities Detection. Sensor Letters. 14(11). 1079–1083. 5 indexed citations
19.
Nasri, Faouzi, Fraj Echouchene, Mohamed Fadhel Ben Aissa, Irina Graur, & Hafedh Belmabrouk. (2015). Investigation of Self-Heating Effects in a 10-nm SOI-MOSFET With an Insulator Region Using Electrothermal Modeling. IEEE Transactions on Electron Devices. 62(8). 2410–2415. 25 indexed citations
20.
Nasri, Faouzi, Mohamed Fadhel Ben Aissa, & Hafedh Belmabrouk. (2014). Microscale thermal conduction based on Cattaneo-Vernotte model in silicon on insulator and Double Gate MOSFETs. Applied Thermal Engineering. 76. 206–211. 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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