F. S. Terra

422 total citations
28 papers, 370 citations indexed

About

F. S. Terra is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, F. S. Terra has authored 28 papers receiving a total of 370 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 17 papers in Materials Chemistry and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in F. S. Terra's work include Chalcogenide Semiconductor Thin Films (17 papers), Semiconductor materials and interfaces (13 papers) and Quantum Dots Synthesis And Properties (11 papers). F. S. Terra is often cited by papers focused on Chalcogenide Semiconductor Thin Films (17 papers), Semiconductor materials and interfaces (13 papers) and Quantum Dots Synthesis And Properties (11 papers). F. S. Terra collaborates with scholars based in Egypt, India and Colombia. F. S. Terra's co-authors include A. M. Mansour, A.A.M. Farag, I. K. El Zawawi, Mohamed Mounir, A. Ashery, A. A. Azab, E.M. El-Menyawy, H. H. Afify, H. El-Zahed and N. Okasha and has published in prestigious journals such as Journal of Physics D Applied Physics, Journal of Alloys and Compounds and Thin Solid Films.

In The Last Decade

F. S. Terra

28 papers receiving 363 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
F. S. Terra Egypt	12	290	281	143	50	46	28	370
A.S. Riad Egypt	11	381 1.3×	270 1.0×	186 1.3×	109 2.2×	35 0.8×	17	472
T. G. Abdel‐Malik Egypt	12	261 0.9×	153 0.5×	132 0.9×	133 2.7×	36 0.8×	18	364
M. Terlemezoğlu Türkiye	13	339 1.2×	302 1.1×	147 1.0×	44 0.9×	27 0.6×	36	408
S. Mergulhão Brazil	11	265 0.9×	222 0.8×	121 0.8×	64 1.3×	55 1.2×	21	371
Tahirzeb Khan Pakistan	11	361 1.2×	391 1.4×	63 0.4×	52 1.0×	114 2.5×	23	496
Mustapha Sahal Morocco	14	505 1.7×	519 1.8×	56 0.4×	51 1.0×	59 1.3×	36	621
A. Hafdallah Algeria	9	325 1.1×	389 1.4×	43 0.3×	80 1.6×	83 1.8×	25	462
Matteo Balestrieri France	10	276 1.0×	345 1.2×	45 0.3×	44 0.9×	55 1.2×	23	431
Hyeon-Seag Kim United States	4	420 1.4×	211 0.8×	97 0.7×	13 0.3×	52 1.1×	6	460
A.M. Abdel Hakeem Egypt	13	225 0.8×	362 1.3×	44 0.3×	52 1.0×	102 2.2×	31	402

Countries citing papers authored by F. S. Terra

Since Specialization

Citations

This map shows the geographic impact of F. S. Terra's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. S. Terra with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. S. Terra more than expected).

Fields of papers citing papers by F. S. Terra

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. S. Terra. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. S. Terra. The network helps show where F. S. Terra may publish in the future.

Co-authorship network of co-authors of F. S. Terra

This figure shows the co-authorship network connecting the top 25 collaborators of F. S. Terra. A scholar is included among the top collaborators of F. S. Terra based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. S. Terra. F. S. Terra is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Farag, A.A.M., et al.. (2018). Temperature dependence of J–V and C–V characteristics of n-InAs/p-GaAs heterojunctions prepared by flash evaporation technique and liquid phase epitaxy. Indian Journal of Pure & Applied Physics. 56(3). 203–209. 10 indexed citations

Azab, A. A., et al.. (2018). Structural and dielectric properties of prepared PbS and PbTe nanomaterials. Journal of Semiconductors. 39(12). 123006–123006. 14 indexed citations

El-Menyawy, E.M., et al.. (2018). Influence of annealing temperatures on the structural, optical and electrical properties of SnSe films. Journal of Materials Science Materials in Electronics. 29(10). 8354–8363. 13 indexed citations

Mansour, A. M., et al.. (2017). Structural, optical and galvanomagnetic properties of nanocrystalline Se_51.43In_44.67Pb_3.9thin films. Materials Research Express. 4(11). 115903–115903. 15 indexed citations

El-Menyawy, E.M., et al.. (2016). Structural, optical and electrical properties of PbS and PbSe quantum dot thin films. Journal of Materials Science Materials in Electronics. 27(10). 10070–10077. 16 indexed citations

Terra, F. S., et al.. (2012). Structural and electrical properties of In–Se films deposited by thermal evaporation. Indian Journal of Physics. 86(12). 1093–1100. 12 indexed citations

Farag, A.A.M., et al.. (2012). Current transport and capacitance-voltage characteristics of n-InSb/p-GaP prepared by flash evaporation and liquid phase epitaxy. Metals and Materials International. 18(3). 509–515. 14 indexed citations

Terra, F. S., et al.. (2010). (InSb/GaAs)-Au hybrid macro-structure prepared by flash evaporation. Indian Journal of Physics. 84(3). 265–277. 11 indexed citations

Farag, A.A.M., et al.. (2010). Structure, DC and AC conductivity of oxazine thin films prepared by thermal evaporation technique. Synthetic Metals. 160(7-8). 743–749. 6 indexed citations

10.

Farag, A.A.M., et al.. (2009). Electrical and photoelectrical characterizations of isotype GaAs15P85/GaP heterojunctions prepared by liquid phase epitaxy. Sensors and Actuators A Physical. 150(2). 231–236. 9 indexed citations

11.

Terra, F. S., et al.. (2009). Study of Gaussian distribution of inhomogeneous barrier height for n-InSb/p-GaAs heterojunction prepared by flash evaporation. Journal of Alloys and Compounds. 481(1-2). 427–433. 43 indexed citations

12.

Farag, A.A.M., A. Ashery, & F. S. Terra. (2008). Fabrication and electrical characterization of n-InSb on porous Si heterojunctions prepared by liquid phase epitaxy. Microelectronics Journal. 39(2). 253–260. 8 indexed citations

13.

Terra, F. S., et al.. (2003). Fabrication, Investigation, and Application of Doped Indium Antimonide Microcrystals in Radiation-Resistant Sensors. Russian Physics Journal. 46(6). 601–608. 4 indexed citations

14.

Zawawi, I. K. El, et al.. (1998). Substrate temperature effect on the optical and electrical properties of antimony trisulfide thin films. Thin Solid Films. 324(1-2). 300–304. 50 indexed citations

15.

Terra, F. S., et al.. (1997). Low temperature effects on the galvanomagnetic properties of thin PbTe films. Journal of Materials Science Materials in Electronics. 8(1). 43–46. 2 indexed citations

16.

Afify, H. H., et al.. (1996). Substrate temperature effects on the tin oxide films prepared by spray pyrolysis. Journal of Materials Science Materials in Electronics. 7(2). 15 indexed citations

17.

Terra, F. S., et al.. (1996). Optical characteristics of thin ZnSe films of different thicknesses. Journal of Materials Science Materials in Electronics. 7(6). 391–395. 35 indexed citations

18.

Terra, F. S.. (1996). Structural and galvanomagnetic properties of CuInS2 films. Applied Physics A. 62(2). 169–173. 2 indexed citations

19.

Terra, F. S.. (1994). EFFECT OF γ RADIATION ON SOME PHYSICAL PROPERTIES OF THE SPINEL FERRITE SYSTEM Ni_0.65Zn_0.35Cu_xFe₂₋_xO₄. Modern Physics Letters B. 8(28). 1781–1790. 3 indexed citations

20.

Terra, F. S., et al.. (1994). Optical properties of amorphous chalcogenide thin films: The effect of Te isovalence substitution in the Ge-S-Se system. Journal of Physics D Applied Physics. 27(1). 156–159. 30 indexed citations

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