E. Kuphal

1.4k total citations
63 papers, 1.1k citations indexed

About

E. Kuphal is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, E. Kuphal has authored 63 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Atomic and Molecular Physics, and Optics, 52 papers in Electrical and Electronic Engineering and 5 papers in Materials Chemistry. Recurrent topics in E. Kuphal's work include Semiconductor Quantum Structures and Devices (42 papers), Semiconductor Lasers and Optical Devices (21 papers) and Semiconductor materials and interfaces (20 papers). E. Kuphal is often cited by papers focused on Semiconductor Quantum Structures and Devices (42 papers), Semiconductor Lasers and Optical Devices (21 papers) and Semiconductor materials and interfaces (20 papers). E. Kuphal collaborates with scholars based in Germany, United States and United Kingdom. E. Kuphal's co-authors include H. Burkhard, D. Fritzsche, E. Kankeleit, P. W. Yu, H. Nickel, H.-G. Clerc, B. Martin, Y. Nakayama, A. Schlachetzki and L. Richter and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Surface Science.

In The Last Decade

E. Kuphal

59 papers receiving 975 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. Kuphal Germany 17 845 823 142 103 94 63 1.1k
T. Matsusue Japan 11 637 0.8× 919 1.1× 188 1.3× 65 0.6× 74 0.8× 25 1.1k
Maurice Glicksman United States 20 606 0.7× 735 0.9× 217 1.5× 65 0.6× 136 1.4× 42 1.0k
T. A. Rabson United States 15 493 0.6× 519 0.6× 254 1.8× 141 1.4× 85 0.9× 83 794
R. Spitzer United States 15 375 0.4× 478 0.6× 83 0.6× 48 0.5× 138 1.5× 31 726
W. Jantz Germany 17 581 0.7× 649 0.8× 135 1.0× 90 0.9× 27 0.3× 84 933
U. Lehnert Germany 13 455 0.5× 458 0.6× 120 0.8× 179 1.7× 150 1.6× 76 856
Hideo Sugai Hideo Sugai Japan 18 852 1.0× 369 0.4× 244 1.7× 62 0.6× 54 0.6× 26 1.0k
J. W. Beeman United States 15 340 0.4× 383 0.5× 232 1.6× 91 0.9× 38 0.4× 67 708
K. Ishi Japan 19 905 1.1× 580 0.7× 93 0.7× 60 0.6× 220 2.3× 43 1.1k
S. V. Kukhlevsky Hungary 14 241 0.3× 259 0.3× 79 0.6× 127 1.2× 121 1.3× 67 658

Countries citing papers authored by E. Kuphal

Since Specialization
Citations

This map shows the geographic impact of E. Kuphal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Kuphal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Kuphal more than expected).

Fields of papers citing papers by E. Kuphal

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Kuphal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Kuphal. The network helps show where E. Kuphal may publish in the future.

Co-authorship network of co-authors of E. Kuphal

This figure shows the co-authorship network connecting the top 25 collaborators of E. Kuphal. A scholar is included among the top collaborators of E. Kuphal based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Kuphal. E. Kuphal is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fritzsche, D., et al.. (2003). InP based HBTs-technology, performance and applications. 404–409.
3.
Ressel, P., P. H. Hao, W. Österle, et al.. (2000). Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties. Journal of Electronic Materials. 29(7). 964–972. 1 indexed citations
4.
Lindner, Andreas, W. Prost, E. Kuphal, et al.. (1997). The role of hydrogen in low-temperature MOVPE growth and carbon doping of In0.53Ga0.47As for InP-based HBT. Journal of Crystal Growth. 170(1-4). 287–291. 12 indexed citations
5.
Hansmann, S., R. Göbel, E. Kuphal, et al.. (1997). Properties of loss-coupled distributed feedback laser arrays for wavelength division multiplexing systems. Journal of Lightwave Technology. 15(7). 1191–1197. 8 indexed citations
6.
Ressel, P., Patrick W. Leech, G.K. Reeves, Weiying Zhou, & E. Kuphal. (1996). Pd/Zn/Pd/Au and Pd/Zn/Au/LaB6/Au ohmic contacts to p-type In0.53Ga0.47As. Applied Physics Letters. 68(13). 1841–1843. 1 indexed citations
7.
Zengerle, Roland, et al.. (1996). Large-Spot Laser Diodes with Stable Carrier Frequency by an External Fiber Grating. Integrated Photonics Research. IThD3–IThD3. 2 indexed citations
8.
Ressel, P., et al.. (1996). Shallow and low-resistive contacts to p -In 0.53 Ga 0.47 Asbased on Pd/Sb and Pd/Ge metallisations. Electronics Letters. 32(18). 1734–1735. 3 indexed citations
9.
Hansmann, S., et al.. (1995). Variation of coupling coefficients by sampled gratings in complex coupled distributed-feedback lasers. IEEE Journal of Selected Topics in Quantum Electronics. 1(2). 341–345. 21 indexed citations
10.
Myburg, G., et al.. (1995). The role of Ru in improving Schottky and ohmic contacts to InP. Vacuum. 46(8-10). 893–897. 6 indexed citations
11.
Hillmer, Hartmut, S. Hansmann, H. Burkhard, Anton Grabmaier, & E. Kuphal. (1995). Application of DFB lasers with individually chirped gratings. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2382. 211–211. 1 indexed citations
12.
Kuphal, E., et al.. (1995). Electron diffusion length in InGaAs:Zn derived from heterostructure bipolar transistors. Solid-State Electronics. 38(4). 795–799. 5 indexed citations
13.
Heime, K., et al.. (1988). Influence of p-InP buffer layers on submicron InGaAs/InP junction field-effect transistors. Applied Physics Letters. 53(25). 2513–2515. 3 indexed citations
14.
Schmitt, Randal L., et al.. (1986). CV profiling on p-p- and n-s.i.-In0.53Ga0.47As/InP heterointerfaces. Surface Science. 174(1-3). 331–336. 9 indexed citations
15.
Burkhard, H., et al.. (1986). Extremely low threshold current 1.52 μm InGaAsP/InP MS-DFB lasers with second-order grating. Electronics Letters. 22(15). 802–803. 15 indexed citations
16.
Kuphal, E. & D. Fritzsche. (1983). Lpe growth of high purity InP and N- and P-In0.53Ga0.47As. Journal of Electronic Materials. 12(4). 743–763. 30 indexed citations
17.
Burkhard, H. & E. Kuphal. (1983). InGaAsP/InP Mushroom Stripe Lasers with Low CW Threshold and High Output Power. Japanese Journal of Applied Physics. 22(11A). L721–L721. 11 indexed citations
18.
Nickel, H. & E. Kuphal. (1981). Deep level spectroscopy and schottky barrier characteristics of InP. physica status solidi (a). 65(2). 583–588. 12 indexed citations
19.
Kuphal, E.. (1972). Measurement of parity admixtures in nuclear forces in180Hf,181Ta and203Tl. The European Physical Journal A. 253(4). 314–334. 20 indexed citations
20.
Clerc, H.-G. & E. Kuphal. (1968). Unelastische Elektronenstreuung an14N für Anregungsenergien zwischen 8,5 und 11,5 MeV. Zeitschrift für Physik A Hadrons and Nuclei. 211(5). 452–468. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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