D.Q. Kelly

2.5k total citations · 1 hit paper
24 papers, 2.0k citations indexed

About

D.Q. Kelly is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, D.Q. Kelly has authored 24 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 7 papers in Biomedical Engineering. Recurrent topics in D.Q. Kelly's work include Semiconductor materials and devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Nanowire Synthesis and Applications (6 papers). D.Q. Kelly is often cited by papers focused on Semiconductor materials and devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Nanowire Synthesis and Applications (6 papers). D.Q. Kelly collaborates with scholars based in United States, Singapore and United Kingdom. D.Q. Kelly's co-authors include David Shirvanyants, Rima Janusziewicz, Kai Chen, Ashley R. Johnson, Joseph M. DeSimone, John R. Tumbleston, Edward T. Samulski, Jason P. Rolland, Robert K. Pinschmidt and Sanjay K. Banerjee and has published in prestigious journals such as Science, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

D.Q. Kelly

23 papers receiving 1.9k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Continuous liquid interface production of 3D objects

2015 1.7k citations John R. Tumbleston, David Shirvanyants et al. Science profile →

Peers

D.Q. Kelly

BE

AE

OC

EEE

ME

Ashley R. Johnson United States

Rima Janusziewicz United States

Yuelong Fu China

Robert K. Pinschmidt United States

Kavin Kowsari United States

Martin Schwentenwein Austria

Xiangnan He China

Rouhollah D. Farahani Canada

Ido Cooperstein Israel

Ashley R. Johnson United States

D.Q. Kelly

1.3k ×1.1

BE

1.2k ×1.1

AE

397 ×1.1

OC

158 ×0.5

EEE

330 ×1.0

ME

Citations per year, relative to D.Q. Kelly D.Q. Kelly (= 1×) peers Ashley R. Johnson

Countries citing papers authored by D.Q. Kelly

Since Specialization

Citations

This map shows the geographic impact of D.Q. Kelly's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.Q. Kelly with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.Q. Kelly more than expected).

Fields of papers citing papers by D.Q. Kelly

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.Q. Kelly. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.Q. Kelly. The network helps show where D.Q. Kelly may publish in the future.

Co-authorship network of co-authors of D.Q. Kelly

This figure shows the co-authorship network connecting the top 25 collaborators of D.Q. Kelly. A scholar is included among the top collaborators of D.Q. Kelly based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D.Q. Kelly. D.Q. Kelly is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

1.

Graham, Luke A., Hao Chen, James K. Guenter, et al.. (2015). High-power VCSEL arrays for consumer electronics. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9381. 93810A–93810A. 11 indexed citations

2.

Tumbleston, John R., David Shirvanyants, Rima Janusziewicz, et al.. (2015). Continuous liquid interface production of 3D objects. Science. 347(6228). 1349–1352. 1748 indexed citations breakdown →

3.

Kelly, D.Q., et al.. (2008). High mobility strained Ge PMOSFETs with high-κ gate dielectric and metal gate on Si substrate. Electronics Letters. 44(3). 240–241. 3 indexed citations

4.

Kelly, D.Q., et al.. (2007). シリコン上に直接堆積した金属-酸化物-半導体素子用の薄いゲルマニウム-炭素層. Semiconductor Science and Technology. 22(1). 204–207. 1 indexed citations

5.

Oh, Jungwoo, Prashant Majhi, Raj Jammy, et al.. (2007). Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation. Thin Solid Films. 516(12). 4107–4110. 4 indexed citations

6.

Kelly, D.Q., Rusty Harris, Jungwoo Oh, et al.. (2007). Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs. Microelectronic Engineering. 84(9-10). 2054–2057. 2 indexed citations

7.

Majhi, P., Guangyu Sun, H. R. Harris, et al.. (2007). High Performance pMOSFETs Using Si/Si<inf>1-x</inf>Ge<inf>x</inf>/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node. National University of Singapore. 727–730. 12 indexed citations

8.

Harris, H. R., Prashant Majhi, Muhammad Hussain, et al.. (2007). Band-Engineered Low PMOS V<inf>T</inf> with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme. 154–155. 27 indexed citations

9.

Tang, Shan, et al.. (2007). Protein-Mediated Nanocrystal Assembly for Flash Memory Fabrication. IEEE Transactions on Electron Devices. 54(3). 433–438. 40 indexed citations

10.

Oye, Michael M., Davood Shahrjerdi, Injo Ok, et al.. (2007). Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80nm) Si1−xGex step-graded buffer layers for high-κ III-V metal-oxide-semiconductor field effect transistor applications. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 25(3). 1098–1102. 16 indexed citations

11.

Kelly, D.Q., et al.. (2006). Thin Germanium-Carbon Layers on Silicon for MOS Applications. ECS Transactions. 3(7). 1077–1086.

12.

Tang, Shan, et al.. (2006). Improved performance of SiGe nanocrystal memory with VARIOT tunnel barrier. IEEE Transactions on Electron Devices. 53(10). 2598–2602. 19 indexed citations

13.

Tang, Shan, et al.. (2006). Nanocrystal flash memory fabricated with protein-mediated assembly. 1. 174–177. 8 indexed citations

14.

Kelly, D.Q., et al.. (2006). Thin Germanium-Carbon Layers on Silicon for Metal-Oxide-Semiconductor Devices. 8. 1–2. 1 indexed citations

15.

García-Gutiérrez, Domingo I., Miguel José–Yacamán, Shi-Feng Lu, D.Q. Kelly, & Sanjay K. Banerjee. (2006). Carbon segregation as a strain relaxation mechanism in thin germanium-carbon layers deposited directly on silicon. Journal of Applied Physics. 100(4). 6 indexed citations

16.

Kelly, D.Q., et al.. (2006). Thin germanium–carbon layers deposited directly on silicon for metal–oxide–semiconductor devices. Semiconductor Science and Technology. 22(1). S204–S207. 8 indexed citations

17.

Kelly, D.Q., et al.. (2006). Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications. Applied Physics Letters. 88(15). 15 indexed citations

18.

Kelly, D.Q., et al.. (2005). Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs. Microelectronics Reliability. 45(7-8). 1033–1040. 5 indexed citations

19.

Kelly, D.Q., et al.. (2004). Enhanced hot-electron performance of strained Si NMOS over unstrained Si. 85. 455–462. 3 indexed citations

20.

Kelly, D.Q., et al.. (2004). Improved Hot-Electron Reliability in Strained-Si nMOS. IEEE Transactions on Electron Devices. 51(12). 2193–2199. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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