Deshun Qu

2.5k total citations · 1 hit paper
17 papers, 2.2k citations indexed

About

Deshun Qu is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, Deshun Qu has authored 17 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Materials Chemistry, 7 papers in Electrical and Electronic Engineering and 4 papers in Biomedical Engineering. Recurrent topics in Deshun Qu's work include 2D Materials and Applications (16 papers), Graphene research and applications (11 papers) and MXene and MAX Phase Materials (8 papers). Deshun Qu is often cited by papers focused on 2D Materials and Applications (16 papers), Graphene research and applications (11 papers) and MXene and MAX Phase Materials (8 papers). Deshun Qu collaborates with scholars based in South Korea, China and United States. Deshun Qu's co-authors include Won Jong Yoo, Xiaochi Liu, Daeyeong Lee, Min Sup Choi, Huamin Li, Takashi Taniguchi, Kenji Watanabe, Jungjin Ryu, Faisal Ahmed and Ming Huang and has published in prestigious journals such as Advanced Materials, Nature Communications and Nano Letters.

In The Last Decade

Deshun Qu

17 papers receiving 2.1k citations

Hit Papers

Lateral MoS2 p–n Junction Formed by Chemical Doping for U... 2014 2026 2018 2022 2014 100 200 300 400 500

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Deshun Qu South Korea 15 2.0k 1.1k 433 161 160 17 2.2k
Amirhasan Nourbakhsh Belgium 16 1.5k 0.8× 1.0k 0.9× 429 1.0× 147 0.9× 137 0.9× 26 1.8k
Po‐Hsun Ho Taiwan 20 1.1k 0.6× 866 0.8× 441 1.0× 183 1.1× 157 1.0× 42 1.5k
Chun‐Chieh Lu Taiwan 14 1.5k 0.8× 797 0.7× 595 1.4× 232 1.4× 159 1.0× 22 1.7k
Ji Ho Sung South Korea 20 1.6k 0.8× 960 0.8× 284 0.7× 287 1.8× 296 1.9× 30 1.9k
Xi Wan China 21 1.6k 0.8× 1.0k 0.9× 424 1.0× 229 1.4× 188 1.2× 51 2.0k
Amit Pawbake India 20 1.1k 0.6× 982 0.9× 223 0.5× 107 0.7× 159 1.0× 53 1.5k
Chang Goo Kang South Korea 18 1.2k 0.6× 1.1k 1.0× 382 0.9× 129 0.8× 111 0.7× 43 1.5k
Andrew D. Dillon United States 7 1.5k 0.8× 1.1k 0.9× 324 0.7× 95 0.6× 283 1.8× 10 1.7k
Weiqi Dang China 18 1.2k 0.6× 759 0.7× 316 0.7× 127 0.8× 183 1.1× 22 1.4k
Victor Carôzo Brazil 16 1.1k 0.5× 533 0.5× 215 0.5× 166 1.0× 138 0.9× 27 1.2k

Countries citing papers authored by Deshun Qu

Since Specialization
Citations

This map shows the geographic impact of Deshun Qu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Deshun Qu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Deshun Qu more than expected).

Fields of papers citing papers by Deshun Qu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Deshun Qu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Deshun Qu. The network helps show where Deshun Qu may publish in the future.

Co-authorship network of co-authors of Deshun Qu

This figure shows the co-authorship network connecting the top 25 collaborators of Deshun Qu. A scholar is included among the top collaborators of Deshun Qu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Deshun Qu. Deshun Qu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Liu, Xiaochi, Junqiang Yang, Deshun Qu, et al.. (2021). High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p–n junctions. Applied Physics Letters. 118(23). 30 indexed citations
2.
Huang, Ming, Pavel Bakharev, Zhu‐Jun Wang, et al.. (2020). Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni(111) foil. Nature Nanotechnology. 15(4). 289–295. 167 indexed citations
3.
Liu, Xiaochi, Deshun Qu, Yahua Yuan, Jian Sun, & Won Jong Yoo. (2020). Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe2 for Low Contact Resistance. ACS Applied Materials & Interfaces. 12(23). 26586–26592. 41 indexed citations
4.
Liu, Xiaochi, Deshun Qu, Lu Wang, et al.. (2020). Charge Density Depinning in Defective MoTe2 Transistor by Oxygen Intercalation. Advanced Functional Materials. 30(50). 27 indexed citations
5.
Liu, Xiaochi, Yahua Yuan, Deshun Qu, & Jian Sun. (2019). Ambipolar MoS2 Field‐Effect Transistor by Spatially Controlled Chemical Doping. physica status solidi (RRL) - Rapid Research Letters. 13(9). 13 indexed citations
6.
Liu, Xiaochi, Deshun Qu, Min Sup Choi, et al.. (2018). Homogeneous molybdenum disulfide tunnel diode formed via chemical doping. Applied Physics Letters. 112(18). 14 indexed citations
7.
Huang, Ming, Mandakini Biswal, Hyo Ju Park, et al.. (2018). Highly Oriented Monolayer Graphene Grown on a Cu/Ni(111) Alloy Foil. ACS Nano. 12(6). 6117–6127. 142 indexed citations
8.
Liu, Xiaochi, Deshun Qu, Huamin Li, et al.. (2017). Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction. ACS Nano. 11(9). 9143–9150. 180 indexed citations
9.
Qu, Deshun, Xiaochi Liu, Ming Huang, et al.. (2017). Carrier‐Type Modulation and Mobility Improvement of Thin MoTe2. Advanced Materials. 29(39). 189 indexed citations
10.
Wang, Bin, Ming Huang, Na Yeon Kim, et al.. (2017). Controlled Folding of Single Crystal Graphene. Nano Letters. 17(3). 1467–1473. 94 indexed citations
11.
Choi, Min Sup, Deshun Qu, Chang Won Ho, et al.. (2016). Effects of plasma treatment on surface properties of ultrathin layered MoS 2. 2D Materials. 3(3). 35002–35002. 76 indexed citations
12.
Liu, Xiaochi, Deshun Qu, Jungjin Ryu, et al.. (2016). P‐Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor. Advanced Materials. 28(12). 2345–2351. 208 indexed citations
13.
Li, Huamin, Daeyeong Lee, Deshun Qu, et al.. (2015). Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide. Nature Communications. 6(1). 6564–6564. 313 indexed citations
14.
Qu, Deshun, Xiaochi Liu, Faisal Ahmed, Daeyeong Lee, & Won Jong Yoo. (2015). Self-screened high performance multi-layer MoS2transistor formed by using a bottom graphene electrode. Nanoscale. 7(45). 19273–19281. 29 indexed citations
15.
Choi, Min Sup, Deshun Qu, Daeyeong Lee, et al.. (2014). Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics. ACS Nano. 8(9). 9332–9340. 515 indexed citations breakdown →
16.
Li, Huamin, Daeyeong Lee, Min Sup Choi, et al.. (2014). Metal-Semiconductor Barrier Modulation for High Photoresponse in Transition Metal Dichalcogenide Field Effect Transistors. Scientific Reports. 4(1). 4041–4041. 119 indexed citations
17.
Li, Huamin, Daeyeong Lee, Deshun Qu, et al.. (2013). Gate-controlled Schottky barrier modulation for superior photoresponse of MoS<inf>2</inf> field effect transistor. 6. 19.6.1–19.6.4. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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