D.A. Carder

890 total citations
39 papers, 740 citations indexed

About

D.A. Carder is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, D.A. Carder has authored 39 papers receiving a total of 740 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 16 papers in Materials Chemistry. Recurrent topics in D.A. Carder's work include Semiconductor Quantum Structures and Devices (14 papers), Spectroscopy and Laser Applications (13 papers) and Silicon Nanostructures and Photoluminescence (7 papers). D.A. Carder is often cited by papers focused on Semiconductor Quantum Structures and Devices (14 papers), Spectroscopy and Laser Applications (13 papers) and Silicon Nanostructures and Photoluminescence (7 papers). D.A. Carder collaborates with scholars based in United Kingdom, Netherlands and New Zealand. D.A. Carder's co-authors include J. Kennedy, A. Markwitz, Roger J. Reeves, P. J. Phillips, Fang Fang, M. Hopkinson, Peter P. Murmu, L. R. Wilson, Sergey Rubanov and J. W. Cockburn and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

D.A. Carder

37 papers receiving 716 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D.A. Carder United Kingdom 14 447 419 246 146 138 39 740
M. Niemeyer Germany 11 432 1.0× 204 0.5× 335 1.4× 74 0.5× 31 0.2× 20 697
B. Stahl Germany 11 104 0.2× 199 0.5× 248 1.0× 119 0.8× 47 0.3× 42 533
G. P. Luo United States 10 366 0.8× 318 0.8× 79 0.3× 169 1.2× 115 0.8× 20 628
Botao Fu China 19 180 0.4× 796 1.9× 604 2.5× 125 0.9× 50 0.4× 54 1.1k
Pascal Becker Germany 15 423 0.9× 401 1.0× 87 0.4× 139 1.0× 30 0.2× 29 694
Akio Toyoshima Japan 12 112 0.3× 183 0.4× 185 0.8× 54 0.4× 35 0.3× 22 449
Shiqi Hu China 12 211 0.5× 275 0.7× 367 1.5× 86 0.6× 29 0.2× 25 664
L. Masson France 16 152 0.3× 334 0.8× 370 1.5× 54 0.4× 15 0.1× 42 626
Anders Blom United States 12 413 0.9× 412 1.0× 291 1.2× 57 0.4× 42 0.3× 35 735
E. G. Seebauer United States 8 169 0.4× 236 0.6× 163 0.7× 39 0.3× 18 0.1× 10 467

Countries citing papers authored by D.A. Carder

Since Specialization
Citations

This map shows the geographic impact of D.A. Carder's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.A. Carder with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.A. Carder more than expected).

Fields of papers citing papers by D.A. Carder

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.A. Carder. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.A. Carder. The network helps show where D.A. Carder may publish in the future.

Co-authorship network of co-authors of D.A. Carder

This figure shows the co-authorship network connecting the top 25 collaborators of D.A. Carder. A scholar is included among the top collaborators of D.A. Carder based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D.A. Carder. D.A. Carder is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kennedy, J., Peter P. Murmu, D.A. Carder, et al.. (2014). Effects of annealing on the structural and optical properties of zinc sulfide thin films deposited by ion beam sputtering. Materials Science in Semiconductor Processing. 26. 561–566. 72 indexed citations
2.
Fang, Fang, J. Kennedy, D.A. Carder, J. Futter, & Sergey Rubanov. (2014). Investigations of near infrared reflective behaviour of TiO2 nanopowders synthesized by arc discharge. Optical Materials. 36(7). 1260–1265. 44 indexed citations
3.
Murmu, Peter P., Rueben J. Mendelsberg, J. Kennedy, et al.. (2011). Structural and photoluminescence properties of Gd implanted ZnO single crystals. Journal of Applied Physics. 110(3). 74 indexed citations
4.
Fang, Fang, et al.. (2010). Modulation of Field Emission Properties of ZnO Nanorods During Arc Discharge. Journal of Nanoscience and Nanotechnology. 10(12). 8239–8243. 56 indexed citations
5.
Markwitz, A., Fang Fang, Jozef Kaiser, et al.. (2010). Electron Beam Annealing of Fe+ Implanted Si Nanostructures. Journal of Nanoscience and Nanotechnology. 10(10). 6556–6561. 3 indexed citations
6.
Carder, D.A. & A. Markwitz. (2009). Field emission measured from nanostructured germanium and silicon thin films. Applied Surface Science. 256(4). 1003–1005. 1 indexed citations
7.
Swartz, C. H., S. M. Durbin, P. A. Anderson, et al.. (2008). Mg doping of InN and the use of yttrium‐stabilised zirconia substrates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(2). 508–510. 3 indexed citations
8.
Carder, D.A., A. Markwitz, H. Baumann, & J. Kennedy. (2007). Self-assembled germanium nanostructures formed using electron-beam annealing. Current Applied Physics. 8(3-4). 276–279. 6 indexed citations
9.
Wells, J.‐P. R., et al.. (2006). Relaxation processes of theGeHstretch modes in hydrogenated amorphous germanium. Physical Review B. 73(15). 14 indexed citations
10.
Murdin, B. N., K. L. Litvinenko, David G. Clarke, et al.. (2006). Spin Relaxation by Transient Monopolar and Bipolar Optical Orientation. Physical Review Letters. 96(9). 96603–96603. 10 indexed citations
11.
Павлов, С.Г., J. N. Hovenier, T.O. Klaassen, et al.. (2006). Generation of THz emission from donor centers in silicon under intracenter optical pumping. 301–302.
12.
Swartz, C. H., et al.. (2006). Buried p-type layers in Mg-doped InN. Applied Physics Letters. 89(18). 82 indexed citations
13.
Pavlov, S. G., H.-W. Hübers, J. N. Hovenier, et al.. (2006). Stimulated Terahertz Stokes Emission of Silicon Crystals Doped with Antimony Donors. Physical Review Letters. 96(3). 37404–37404. 34 indexed citations
14.
Kelsall, R. W., Z. Ikonić, C. R. Pidgeon, et al.. (2005). Intersubband lifetimes inpSiSiGeterahertz quantum cascade heterostructures. Physical Review B. 71(11). 23 indexed citations
15.
Halsall, Matthew P., P. Harrison, Vladimir Jovanović, et al.. (2005). Normal Incidence Mid-Infrared Photocurrent in AlGaN/GaN Quantum Well Infrared Photodetectors. Acta Physica Polonica A. 107(1). 174–178. 2 indexed citations
16.
Zibik, E. A., L. R. Wilson, G. Bastard, et al.. (2004). Polaron decay and inter‐level transfer in InAs/GaAs self‐assembled quantum dots. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 1(11). 2613–2616. 2 indexed citations
17.
Zibik, E. A., L. R. Wilson, G. Bastard, et al.. (2004). Intraband relaxation via polaron decay in InAs self-assembled quantum dots. Physical Review B. 70(16). 80 indexed citations
18.
Zibik, E. A., L. R. Wilson, J.‐P. R. Wells, et al.. (2004). Polaron relaxation channel in InAs/GaAs self-assembled quantum dots. Semiconductor Science and Technology. 19(4). S316–S318. 7 indexed citations
19.
Wilson, L. R., D.A. Carder, J. W. Cockburn, et al.. (2002). Room temperature GaAs-based quantum cascade laser with GaInP waveguide cladding. Electronics Letters. 38(24). 1539–1541. 6 indexed citations
20.
Wilson, L. R., J. W. Cockburn, D.A. Carder, et al.. (2001). λ = 8.3 µm GaAs/AlAs quantum cascadelasersincorporating InAs monolayers. Electronics Letters. 37(21). 1292–1293. 8 indexed citations

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