Changwu Hu

550 total citations
15 papers, 481 citations indexed

About

Changwu Hu is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Changwu Hu has authored 15 papers receiving a total of 481 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in Changwu Hu's work include Semiconductor materials and devices (6 papers), Semiconductor Quantum Structures and Devices (4 papers) and Graphene research and applications (3 papers). Changwu Hu is often cited by papers focused on Semiconductor materials and devices (6 papers), Semiconductor Quantum Structures and Devices (4 papers) and Graphene research and applications (3 papers). Changwu Hu collaborates with scholars based in United States, Japan and China. Changwu Hu's co-authors include John Kouvetakis, A. V. G. Chizmeshya, David J. Smith, J. L. Taraci, J. Tolle, J. Menéndez, Stefan Zollner, Matthew R. Bauer, S. Suto and A. Kasuya and has published in prestigious journals such as Journal of the American Chemical Society, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

Changwu Hu

14 papers receiving 467 citations

Peers

Changwu Hu
M. Zigone France
Jonathan Wyrick United States
A. Mlayah France
Rita John India
M. Zigone France
Changwu Hu
Citations per year, relative to Changwu Hu Changwu Hu (= 1×) peers M. Zigone

Countries citing papers authored by Changwu Hu

Since Specialization
Citations

This map shows the geographic impact of Changwu Hu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Changwu Hu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Changwu Hu more than expected).

Fields of papers citing papers by Changwu Hu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Changwu Hu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Changwu Hu. The network helps show where Changwu Hu may publish in the future.

Co-authorship network of co-authors of Changwu Hu

This figure shows the co-authorship network connecting the top 25 collaborators of Changwu Hu. A scholar is included among the top collaborators of Changwu Hu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Changwu Hu. Changwu Hu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Zhang, Tianhu, et al.. (2023). Feature selection algorithm for substation main equipment defect text mining based on natural language processing. IET Cyber-Physical Systems Theory & Applications. 9(3). 238–246.
2.
Yan, Yan, Yong Qian, Hongzhong Ma, & Changwu Hu. (2023). Research on imbalanced data fault diagnosis of on-load tap changers based on IGWO-WELM. Mathematical Biosciences & Engineering. 20(3). 4877–4895. 3 indexed citations
3.
Chizmeshya, A. V. G., Cole Ritter, Changwu Hu, et al.. (2006). Synthesis of Butane-Like SiGe Hydrides:  Enabling Precursors for CVD of Ge-Rich Semiconductors. Journal of the American Chemical Society. 128(21). 6919–6930. 25 indexed citations
4.
Ritter, Cole, Changwu Hu, A. V. G. Chizmeshya, et al.. (2005). Synthesis and Fundamental Studies of (H3Ge)xSiH4-x Molecules:  Precursors to Semiconductor Hetero- and Nanostructures on Si. Journal of the American Chemical Society. 127(27). 9855–9864. 31 indexed citations
5.
Hu, Changwu, Vijay Richard D’Costa, J. Menéndez, et al.. (2005). Synthesis of Si-Ge nanoscale structures via deposition of single-source (GeH3)4−nSiHn hydrides. Applied Physics Letters. 87(8). 2 indexed citations
6.
Hu, Changwu, J. L. Taraci, John Tolle, et al.. (2003). Synthesis of Highly Coherent SiGe and Si4Ge Nanostructures by Molecular Beam Epitaxy of H3SiGeH3 and Ge(SiH3)4. Chemistry of Materials. 15(19). 3569–3572. 9 indexed citations
7.
Bauer, Matthew R., J. L. Taraci, J. Tolle, et al.. (2002). Ge–Sn semiconductors for band-gap and lattice engineering. Applied Physics Letters. 81(16). 2992–2994. 237 indexed citations
8.
Hu, Changwu. (2000). Morphological Control of GaN Buffer Layers Grown by Molecular Beam Epitaxy on 6H-SiC(0001). Surface Review and Letters. 7(5-6). 565–570. 6 indexed citations
9.
Hu, Changwu, David J. Smith, R. Bruce Doak, & I. S. T. Tsong. (2000). MORPHOLOGICAL CONTROL OF GaN BUFFER LAYERS GROWN BY MOLECULAR BEAM EPITAXY ON 6H–SiC(0001). Surface Review and Letters. 7(05n06). 565–570. 6 indexed citations
10.
Jiang, Zuimin, Fang Lu, Jie Qin, et al.. (1998). Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100). Thin Solid Films. 321(1-2). 60–64. 19 indexed citations
11.
Suto, S., Kazuyuki Sakamoto, Takanori Wakita, Changwu Hu, & A. Kasuya. (1997). Vibrational properties and charge transfer ofC60adsorbed on Si(111)-(7×7)and Si(100)-(2×1)surfaces. Physical review. B, Condensed matter. 56(12). 7439–7445. 55 indexed citations
12.
Wang, Xun, Zuimin Jiang, Fang Lu, et al.. (1997). Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy. Applied Physics Letters. 71(24). 3543–3545. 60 indexed citations
13.
Suto, S., A. Kasuya, Changwu Hu, et al.. (1996). VIBRATIONAL PROPERTIES AND STRUCTURE OF C60 THIN FILMS ON Si(111)-(7×7) AND GRAPHITE SURFACES. Surface Review and Letters. 3(1). 927–931. 13 indexed citations
14.
Suto, S., et al.. (1994). Vibrational Modes of C60 Fullerene on Si(111)7×7 Surface: Estimation of Charge Transfer from Silicon Dangling Bonds to C60 Molecules. Japanese Journal of Applied Physics. 33(10B). L1489–L1489. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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