Benjamin Huet

553 total citations
22 papers, 338 citations indexed

About

Benjamin Huet is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, Benjamin Huet has authored 22 papers receiving a total of 338 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Materials Chemistry, 11 papers in Electrical and Electronic Engineering and 6 papers in Biomedical Engineering. Recurrent topics in Benjamin Huet's work include Graphene research and applications (13 papers), 2D Materials and Applications (7 papers) and MXene and MAX Phase Materials (5 papers). Benjamin Huet is often cited by papers focused on Graphene research and applications (13 papers), 2D Materials and Applications (7 papers) and MXene and MAX Phase Materials (5 papers). Benjamin Huet collaborates with scholars based in United States, Belgium and France. Benjamin Huet's co-authors include Jean‐Pierre Raskin, David W. Snyder, Joan M. Redwing, Saiphaneendra Bachu, Nasim Alem, Xiaotian Zhang, Thomas Pardoen, Jean-Joseph Adjizian, Alejandro L. Briseño and Jean‐Christophe Charlier and has published in prestigious journals such as Nature Communications, ACS Nano and Applied Physics Letters.

In The Last Decade

Benjamin Huet

21 papers receiving 328 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Benjamin Huet United States 11 277 129 113 38 35 22 338
Satoru Fukamachi Japan 6 271 1.0× 112 0.9× 85 0.8× 36 0.9× 35 1.0× 9 335
Hong Goo Kim South Korea 8 255 0.9× 68 0.5× 75 0.7× 40 1.1× 37 1.1× 8 323
Igor Bejenari Germany 6 295 1.1× 90 0.7× 75 0.7× 44 1.2× 59 1.7× 11 336
Jean-Roch Huntzinger France 10 249 0.9× 132 1.0× 98 0.9× 18 0.5× 90 2.6× 14 320
M. Precner Slovakia 8 285 1.0× 147 1.1× 58 0.5× 42 1.1× 38 1.1× 21 347
Stefanie Sergeant Belgium 11 197 0.7× 172 1.3× 65 0.6× 34 0.9× 31 0.9× 36 317
Jiahao Yan China 9 234 0.8× 142 1.1× 70 0.6× 40 1.1× 83 2.4× 33 317
Yukiko Mizuguchi Japan 3 341 1.2× 190 1.5× 198 1.8× 56 1.5× 28 0.8× 5 402
Ruikang Dong China 6 372 1.3× 199 1.5× 71 0.6× 39 1.0× 22 0.6× 11 426
P. Aghdasi Iran 17 525 1.9× 90 0.7× 48 0.4× 37 1.0× 55 1.6× 32 565

Countries citing papers authored by Benjamin Huet

Since Specialization
Citations

This map shows the geographic impact of Benjamin Huet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Benjamin Huet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Benjamin Huet more than expected).

Fields of papers citing papers by Benjamin Huet

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Benjamin Huet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Benjamin Huet. The network helps show where Benjamin Huet may publish in the future.

Co-authorship network of co-authors of Benjamin Huet

This figure shows the co-authorship network connecting the top 25 collaborators of Benjamin Huet. A scholar is included among the top collaborators of Benjamin Huet based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Benjamin Huet. Benjamin Huet is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bachu, Saiphaneendra, Benjamin Huet, Steffi Y. Woo, et al.. (2024). Quantum Confined Luminescence in Two Dimensions. ACS Photonics. 12(1). 364–374. 3 indexed citations
2.
Kim, Gwangwoo, Benjamin Huet, Christopher E. Stevens, et al.. (2024). Confinement of excited states in two-dimensional, in-plane, quantum heterostructures. Nature Communications. 15(1). 6361–6361. 12 indexed citations
3.
Lozano, Daniel Pérez, Jean-Philippe Soulié, A. Walke, et al.. (2024). Two Metal Level Semi-Damascene Interconnects for Superconducting Digital Logic. 1–3.
4.
Zimmermann, P., et al.. (2023). Space-charge limited and ultrafast dynamics in graphene-based nano-gaps. Applied Physics Letters. 123(1). 1 indexed citations
5.
Bachu, Saiphaneendra, Małgorzata Kowalik, Benjamin Huet, et al.. (2023). Role of Bilayer Graphene Microstructure on the Nucleation of WSe2 Overlayers. ACS Nano. 17(13). 12140–12150. 5 indexed citations
6.
Rack, Martin, et al.. (2023). High Resistivity Trap-Rich Substrate for RF MEMS Switches. Digital Access to Libraries (Université catholique de Louvain (UCL), l'Université de Namur (UNamur) and the Université Saint-Louis (USL-B)). 27. 1–4. 1 indexed citations
7.
Huet, Benjamin, et al.. (2023). Tuning the stochasticity of VO2 neurons firing-threshold through grain size engineering. Digital Access to Libraries (Université catholique de Louvain (UCL), l'Université de Namur (UNamur) and the Université Saint-Louis (USL-B)). 1 indexed citations
8.
Huet, Benjamin, Saiphaneendra Bachu, Nasim Alem, David W. Snyder, & Joan M. Redwing. (2022). MOCVD of WSe2 crystals on highly crystalline single- and multi-layer CVD graphene. Carbon. 202. 150–160. 9 indexed citations
9.
Huet, Benjamin, et al.. (2021). Influence of the Underlying Substrate on the Physical Vapor Deposition of Zn-Phthalocyanine on Graphene. ACS Omega. 6(31). 20598–20610. 6 indexed citations
10.
Bansal, Anushka, Maria Hilse, Benjamin Huet, et al.. (2021). Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire. ACS Applied Materials & Interfaces. 13(45). 54516–54526. 26 indexed citations
11.
Bachu, Saiphaneendra, et al.. (2021). S/TEM Characterization of Vertical Heterostructures Formed by Mono- to Multi-layer Graphene and WSe2. Microscopy and Microanalysis. 27(S1). 894–895. 1 indexed citations
12.
Chen, Xuegang, Benjamin Huet, Tanushree H. Choudhury, et al.. (2021). Orientation domain dispersions in wafer scale epitaxial monolayer WSe2 on sapphire. Applied Surface Science. 567. 150798–150798. 8 indexed citations
13.
Fivel, Marc, Benjamin Huet, Cécile D’Haese, et al.. (2021). Single layer graphene controlled surface and bulk indentation plasticity in copper. International Journal of Plasticity. 138. 102936–102936. 22 indexed citations
14.
Huet, Benjamin, Jean‐Pierre Raskin, David W. Snyder, & Joan M. Redwing. (2020). Fundamental limitations in transferred CVD graphene caused by Cu catalyst surface morphology. Carbon. 163. 95–104. 44 indexed citations
15.
Huet, Benjamin, et al.. (2020). Physical vapor deposition of zinc phthalocyanine nanostructures on oxidized silicon and graphene substrates. Journal of Crystal Growth. 533. 125484–125484. 10 indexed citations
16.
Li, Guoli, Nicolás André, Benjamin Huet, et al.. (2019). Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Si-based photodiode. Journal of Physics D Applied Physics. 52(24). 245101–245101. 15 indexed citations
17.
Huet, Benjamin, Xiaotian Zhang, Joan M. Redwing, David W. Snyder, & Jean‐Pierre Raskin. (2019). Multi-wafer batch synthesis of graphene on Cu films by quasi-static flow chemical vapor deposition. 2D Materials. 6(4). 45032–45032. 24 indexed citations
18.
Huet, Benjamin & Jean‐Pierre Raskin. (2017). Role of Cu foil in-situ annealing in controlling the size and thickness of CVD graphene domains. Carbon. 129. 270–280. 60 indexed citations
19.
Adjizian, Jean-Joseph, et al.. (2017). Adhesionless and near-ideal contact behavior of graphene on Cu thin film. Carbon. 122. 446–450. 18 indexed citations
20.
Huet, Benjamin & Jean‐Pierre Raskin. (2017). Pressure-Controlled Chemical Vapor Deposition of Single-Layer Graphene with Millimeter-Size Domains on Thin Copper Film. Chemistry of Materials. 29(8). 3431–3440. 32 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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