B. V. Olson

920 total citations
30 papers, 742 citations indexed

About

B. V. Olson is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, B. V. Olson has authored 30 papers receiving a total of 742 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 26 papers in Atomic and Molecular Physics, and Optics and 3 papers in Materials Chemistry. Recurrent topics in B. V. Olson's work include Advanced Semiconductor Detectors and Materials (28 papers), Semiconductor Quantum Structures and Devices (26 papers) and Chalcogenide Semiconductor Thin Films (21 papers). B. V. Olson is often cited by papers focused on Advanced Semiconductor Detectors and Materials (28 papers), Semiconductor Quantum Structures and Devices (26 papers) and Chalcogenide Semiconductor Thin Films (21 papers). B. V. Olson collaborates with scholars based in United States. B. V. Olson's co-authors include Eric A. Shaner, Samuel D. Hawkins, Thomas F. Boggess, Michael E. Flatté, John F. Klem, J. P. Prineas, L. M. Murray, Emil Kadlec, Jungkwun Kim and J. T. Olesberg and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Quantum Electronics.

In The Last Decade

B. V. Olson

30 papers receiving 710 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. V. Olson United States 17 699 571 121 93 66 30 742
Elizabeth H. Steenbergen United States 17 1.0k 1.4× 784 1.4× 189 1.6× 117 1.3× 93 1.4× 53 1.1k
A. Glozman Israel 17 651 0.9× 443 0.8× 207 1.7× 166 1.8× 49 0.7× 28 722
H. J. Haugan United States 18 854 1.2× 742 1.3× 246 2.0× 42 0.5× 60 0.9× 77 918
Y.-H. Zhang United States 11 472 0.7× 452 0.8× 111 0.9× 46 0.5× 47 0.7× 19 547
A. M. Hoang United States 15 779 1.1× 591 1.0× 89 0.7× 178 1.9× 77 1.2× 28 833
C. Besikci Türkiye 17 559 0.8× 441 0.8× 89 0.7× 64 0.7× 127 1.9× 44 640
C. Cervera France 13 433 0.6× 284 0.5× 62 0.5× 135 1.5× 45 0.7× 37 456
K. Kosai United States 13 545 0.8× 397 0.7× 185 1.5× 108 1.2× 35 0.5× 23 601
A. Kębłowski Poland 13 379 0.5× 208 0.4× 76 0.6× 134 1.4× 44 0.7× 41 399
O. K. Wu United States 17 585 0.8× 404 0.7× 151 1.2× 73 0.8× 44 0.7× 58 648

Countries citing papers authored by B. V. Olson

Since Specialization
Citations

This map shows the geographic impact of B. V. Olson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. V. Olson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. V. Olson more than expected).

Fields of papers citing papers by B. V. Olson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. V. Olson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. V. Olson. The network helps show where B. V. Olson may publish in the future.

Co-authorship network of co-authors of B. V. Olson

This figure shows the co-authorship network connecting the top 25 collaborators of B. V. Olson. A scholar is included among the top collaborators of B. V. Olson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. V. Olson. B. V. Olson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hammond, J. O. S., et al.. (2022). MRI of a middle ear cholesteatoma in a cat. Veterinary Radiology & Ultrasound. 63(5). E16–E20. 2 indexed citations
2.
Haugan, H. J., B. V. Olson, Gail J. Brown, et al.. (2017). Significantly enhanced carrier lifetimes of very long-wave infrared absorbers based on strained-layer InAs/GaInSb superlattices. Optical Engineering. 56(9). 91604–91604. 5 indexed citations
3.
Olson, B. V., John F. Klem, Emil Kadlec, et al.. (2017). Vertical Hole Transport and Carrier Localization inInAs/InAs1−xSbxType-II Superlattice Heterojunction Bipolar Transistors. Physical Review Applied. 7(2). 27 indexed citations
4.
Goldflam, Michael, Emil Kadlec, B. V. Olson, et al.. (2016). Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers. Applied Physics Letters. 109(25). 44 indexed citations
5.
Olson, B. V., Eric A. Shaner, Samuel D. Hawkins, et al.. (2016). Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy inInAs/In(As,Sb)Type-II Superlattices. Physical Review Applied. 5(5). 20 indexed citations
6.
Kadlec, Emil, B. V. Olson, Michael Goldflam, et al.. (2016). Effects of electron doping level on minority carrier lifetimes in n-type mid-wave infrared InAs/InAs1−xSbx type-II superlattices. Applied Physics Letters. 109(26). 24 indexed citations
7.
Haugan, H. J., Gail J. Brown, B. V. Olson, et al.. (2016). Minority carrier lifetimes in very long-wave infrared InAs/GaInSb superlattices. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 34(2). 3 indexed citations
8.
Dyer, Gregory C., Xiaoyan Shi, B. V. Olson, et al.. (2016). Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure. Applied Physics Letters. 108(1). 8 indexed citations
9.
Liu, Runyu, Daniel Wasserman, James C. Mabon, et al.. (2015). Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors. Applied Physics Letters. 106(7). 32 indexed citations
10.
Olson, B. V., C. H. Grein, Emil Kadlec, et al.. (2015). Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices. Applied Physics Letters. 107(26). 30 indexed citations
11.
Olson, B. V., Emil Kadlec, J. F. Klem, et al.. (2015). Intensity- and Temperature-Dependent Carrier Recombination inInAs/InAs1−xSbxType-II Superlattices. Physical Review Applied. 3(4). 45 indexed citations
12.
Haugan, H. J., et al.. (2015). Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices. Applied Physics Letters. 107(13). 7 indexed citations
13.
Olson, B. V., Eric A. Shaner, Samuel D. Hawkins, et al.. (2015). Temperature dependent carrier lifetime measurements of InAs/InAsSb T2SLs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9370. 93700J–93700J. 2 indexed citations
14.
Olson, B. V., Eric A. Shaner, Samuel D. Hawkins, et al.. (2014). Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices. Applied Physics Letters. 105(2). 62 indexed citations
15.
Olson, B. V., Emil Kadlec, Jin K. Kim, et al.. (2014). Intensity and temperature dependent carrier recombination in InAs/InAsSb type-II superlattices.. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 3 indexed citations
16.
Olson, B. V., et al.. (2013). Nondegenerate two-photon absorption in GaSb. Optics Communications. 304. 54–57. 7 indexed citations
17.
Olson, B. V., Eric A. Shaner, Jungkwun Kim, et al.. (2013). Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys. Applied Physics Letters. 103(5). 74 indexed citations
18.
Haugan, H. J., Gail J. Brown, S. Elhamri, et al.. (2012). Annealing effect on the long wavelength infrared InAs/GaSb superlattice materials. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8512. 85120K–85120K. 1 indexed citations
19.
Olson, B. V., Eric A. Shaner, John F. Klem, et al.. (2012). Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice. Applied Physics Letters. 101(9). 92109–92109. 185 indexed citations
20.
Haugan, H. J., Gail J. Brown, Frank Szmulowicz, et al.. (2011). The role of InAs thickness on the material properties of InAs/GaSb superlattices. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8154. 81540J–81540J. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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