Ablat Abliz

1.2k total citations
49 papers, 929 citations indexed

About

Ablat Abliz is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Ablat Abliz has authored 49 papers receiving a total of 929 indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Electrical and Electronic Engineering, 31 papers in Materials Chemistry and 11 papers in Biomedical Engineering. Recurrent topics in Ablat Abliz's work include Thin-Film Transistor Technologies (32 papers), ZnO doping and properties (25 papers) and Nanowire Synthesis and Applications (10 papers). Ablat Abliz is often cited by papers focused on Thin-Film Transistor Technologies (32 papers), ZnO doping and properties (25 papers) and Nanowire Synthesis and Applications (10 papers). Ablat Abliz collaborates with scholars based in China, France and Taiwan. Ablat Abliz's co-authors include Da Wan, Lei Xu, Lei Liao, Chuansheng Liu, Tailiang Guo, Changzhong Jiang, Xingqiang Liu, Linyu Yang, Jingli Wang and Huipeng Chen and has published in prestigious journals such as Applied Physics Letters, Advanced Functional Materials and Journal of Power Sources.

In The Last Decade

Ablat Abliz

45 papers receiving 914 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ablat Abliz China 18 804 551 152 139 114 49 929
Vinay Kumar India 13 424 0.5× 255 0.5× 216 1.4× 89 0.6× 123 1.1× 30 711
Yulin Kong China 10 312 0.4× 208 0.4× 44 0.3× 50 0.4× 149 1.3× 15 477
Subhajit Pal India 14 181 0.2× 294 0.5× 214 1.4× 37 0.3× 84 0.7× 39 490
Jingqin Mao China 10 324 0.4× 139 0.3× 36 0.2× 64 0.5× 124 1.1× 19 503
Tengfei Duan China 13 309 0.4× 192 0.3× 85 0.6× 26 0.2× 83 0.7× 28 519
Zeng Chen China 15 347 0.4× 364 0.7× 101 0.7× 131 0.9× 25 0.2× 57 711
Sumita Choudhary India 8 152 0.2× 433 0.8× 49 0.3× 25 0.2× 128 1.1× 15 604
Asaf Rotbart Australia 5 686 0.9× 478 0.9× 29 0.2× 104 0.7× 271 2.4× 6 884
Arpana Agrawal India 14 171 0.2× 266 0.5× 107 0.7× 51 0.4× 221 1.9× 32 493
Anwesha Mukherjee India 11 299 0.4× 402 0.7× 195 1.3× 35 0.3× 200 1.8× 24 582

Countries citing papers authored by Ablat Abliz

Since Specialization
Citations

This map shows the geographic impact of Ablat Abliz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ablat Abliz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ablat Abliz more than expected).

Fields of papers citing papers by Ablat Abliz

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ablat Abliz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ablat Abliz. The network helps show where Ablat Abliz may publish in the future.

Co-authorship network of co-authors of Ablat Abliz

This figure shows the co-authorship network connecting the top 25 collaborators of Ablat Abliz. A scholar is included among the top collaborators of Ablat Abliz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ablat Abliz. Ablat Abliz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Qu, C.C., et al.. (2025). Effects of different metal electrode layer on the electrical performances of InGaSnO thin-film transistors. Materials Science in Semiconductor Processing. 204. 110304–110304.
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Abliz, Ablat, et al.. (2025). Design of High-Performance Dual-Channel-Layered InGaZnO Thin-Film Transistors With Different Indium Contents. IEEE Transactions on Electron Devices. 72(4). 1802–1808. 4 indexed citations
4.
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6.
Zheng, Maojun, Ablat Abliz, & Da Wan. (2024). Design of different oxygen content and high performance bilayer In2O3 thin-film transistors at room temperature for flexible electronics. Applied Surface Science. 681. 161510–161510. 2 indexed citations
7.
Yang, Linyu, Shuying Wang, Jun Wang, et al.. (2024). Zinc ion modulation of hydrated vanadium pentoxide for high-performance aqueous zinc ion batteries. Journal of Power Sources. 595. 234057–234057. 25 indexed citations
8.
Yang, Linyu, Shuang Zhou, Ablat Abliz, et al.. (2024). Long-lasting Zn metal anode coated with an industrially available amorphous InGaZnO layer. Chemical Engineering Journal. 501. 157729–157729. 4 indexed citations
9.
Li, Rui, et al.. (2024). Effects of N2O plasma treatment on the performance and stability of high indium content InGaZnO thin-film transistors. Journal of Physics D Applied Physics. 58(8). 85308–85308. 1 indexed citations
10.
Abliz, Ablat, et al.. (2024). Rational Design of Different Ga Content Bilayer InGaZnO Thin-Film Transistors With Al₂O₃/HfO₂ Passivation Layer. IEEE Transactions on Electron Devices. 71(5). 3032–3038. 10 indexed citations
11.
Abliz, Ablat, et al.. (2023). Fabrication and investigation of the electrical performance of nitrogenated bilayer ZnO:N/ZnO thin-film transistors. Chinese Journal of Physics. 85. 318–325. 4 indexed citations
12.
Yang, Linyu, et al.. (2022). Capacity-enhanced and kinetic-expedited zinc-ion storage ability in a Zn3V3O8/VO2cathode enabled by heterostructural design. Dalton Transactions. 51(40). 15436–15445. 6 indexed citations
13.
Abliz, Ablat, et al.. (2022). Rational design of oxide heterostructure InGaZnO/TiO2 for high-performance thin-film transistors. Applied Surface Science. 609. 155257–155257. 25 indexed citations
14.
Abliz, Ablat. (2021). Hydrogenation of Mg-Doped InGaZnO Thin-Film Transistors for Enhanced Electrical Performance and Stability. IEEE Transactions on Electron Devices. 68(7). 3379–3383. 23 indexed citations
15.
Abliz, Ablat, Da Wan, Haiming Duan, et al.. (2020). Low-frequency noise in high performance and stability of Li-doped ZnO thin-film transistors. Journal of Physics D Applied Physics. 53(41). 415110–415110. 15 indexed citations
16.
Guo, Xiaolin, Haiming Duan, Mengqiu Long, et al.. (2020). Cd12O12 cage cluster-assembled nanowires and band gap regulation: A first-principles investigation. Physics Letters A. 384(25). 126463–126463. 3 indexed citations
17.
Wan, Da, Bei Jiang, Hao Huang, et al.. (2020). High Voltage Gain WSe2 Complementary Compact Inverter With Buried Gate for Local Doping. IEEE Electron Device Letters. 41(6). 944–947. 16 indexed citations
18.
Zhang, Chuanchuan, Haiming Duan, Xin Lv, et al.. (2019). Static and dynamical isomerization of Cu38 cluster. Scientific Reports. 9(1). 7564–7564. 15 indexed citations
19.
Yang, Linyu, et al.. (2019). Hollow paramecium-like SnO2/TiO2 heterostructure designed for sodium storage. Journal of Solid State Chemistry. 274. 176–181. 16 indexed citations
20.
Abliz, Ablat, Jingli Wang, Lei Xu, et al.. (2016). Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer. Applied Physics Letters. 108(21). 66 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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