A. Bousetta

615 citations
21 papers · 550 · h-index 11

Impact in

    • Metal and Thin Film Mechanics
    • Diamond and Carbon-based Materials Research
    • Boron and Carbon Nanomaterials Research
    • Graphene research and applications

Papers in

A. Bousetta

21 papers receiving 529 citations

Peers

A. Bousetta
Comparison fields: 5 of 41
  • Mechanics of Materials 302
  • Materials Chemistry 387
  • Electrical and Electronic Engineering 239
  • Computational Mechanics 81
  • Condensed Matter Physics 45
Replace H. Huomo with:
H. Huomo Finland
Masaaki Yoshitake Japan
U. Lambert Germany
Masanaga Fukasawa Japan
Masaru Shimada Japan
Mitsuru Okigawa Japan
James W. McCamy United States
Robert K. Waits United States
Sohei Okada Japan
Mark Wiggins United States
A. Bousetta relative to H. Huomo Finland H. Huomo's profile →
Citations per field
00.5×2.8×
H. Huomo · 1×
Citations per year

Countries citing papers authored by A. Bousetta

Since Specialization
Citations

This map shows the geographic impact of A. Bousetta's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Bousetta with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Bousetta more than expected).

Fields of papers citing papers by A. Bousetta

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Bousetta. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Bousetta. The network helps show where A. Bousetta may publish in the future.

Co-authors

The 21 scholars most cited alongside A. Bousetta, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Bousetta Line = papers co-authored together A. Bousetta links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 21 papers — load more, or switch the sort, to bring in the rest.

#Work
1 1994189
2 199579
3 199658
4 199444
5 199233
6 200528
7 199126
8 199124
9 199313
10 199611
11 199610
12 19968
13 19918
14 19926
15 19904
16 19923
17 20022
18 19961
19
Effect of the growth process on boron nitride thin films electrical properties
19951
20
Synthesis and characterization of co-deposited carbon nitride and boron materials
19951

About A. Bousetta

A. Bousetta is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Mechanics of Materials, Condensed Matter Physics and Atomic and Molecular Physics, and Optics, having authored 21 papers that have together received 550 indexed citations. Recurring topics across this work include Semiconductor materials and devices (8 papers), Metal and Thin Film Mechanics (7 papers), Diamond and Carbon-based Materials Research (5 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers), Ion-surface interactions and analysis (4 papers), Boron and Carbon Nanomaterials Research (4 papers), Silicon and Solar Cell Technologies (4 papers) and GaN-based semiconductor devices and materials (3 papers). The work is most often cited by research in Mechanics of Materials (302 citations), Materials Chemistry (387 citations), Electrical and Electronic Engineering (239 citations), Computational Mechanics (81 citations) and Condensed Matter Physics (45 citations). A. Bousetta has collaborated with scholars based in United States, United Kingdom and Netherlands. Frequent co-authors include A. Bensaoula, Ming Lü, Albert J. Schultz, Jaap van den Berg, Andrew Cross, J. Schultz, P. C. Zalm, D.G. Armour, J. W. Rabalais and Peter Nordlander. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, IEEE Electron Device Letters and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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