A. Bousetta

615 total citations
21 papers, 550 citations indexed

About

A. Bousetta is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, A. Bousetta has authored 21 papers receiving a total of 550 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 7 papers in Mechanics of Materials. Recurrent topics in A. Bousetta's work include Semiconductor materials and devices (8 papers), Metal and Thin Film Mechanics (7 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). A. Bousetta is often cited by papers focused on Semiconductor materials and devices (8 papers), Metal and Thin Film Mechanics (7 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). A. Bousetta collaborates with scholars based in United States, United Kingdom and Netherlands. A. Bousetta's co-authors include A. Bensaoula, Ming Lü, Albert J. Schultz, Jaap van den Berg, Andrew Cross, J. Schultz, P. C. Zalm, D.G. Armour, J. W. Rabalais and Peter Nordlander and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

A. Bousetta

21 papers receiving 529 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A. Bousetta United States	11	387	302	239	81	72	21	550
Masaaki Yoshitake Japan	11	350 0.9×	172 0.6×	275 1.2×	45 0.6×	28 0.4×	46	496
H. Huomo Finland	13	421 1.1×	557 1.8×	189 0.8×	107 1.3×	150 2.1×	23	707
Sohei Okada Japan	12	175 0.5×	217 0.7×	162 0.7×	20 0.2×	141 2.0×	53	480
Mireille Gaillard France	12	226 0.6×	182 0.6×	311 1.3×	49 0.6×	67 0.9×	24	487
A. Lunk Germany	16	247 0.6×	232 0.8×	320 1.3×	40 0.5×	65 0.9×	44	530
Mark Wiggins United States	8	212 0.5×	87 0.3×	208 0.9×	45 0.6×	75 1.0×	12	366
Manabu Hamagaki Japan	13	137 0.4×	154 0.5×	332 1.4×	65 0.8×	79 1.1×	39	413
James W. McCamy United States	12	316 0.8×	48 0.2×	319 1.3×	65 0.8×	138 1.9×	26	511
Tomonobu Hata Japan	13	297 0.8×	148 0.5×	237 1.0×	27 0.3×	56 0.8×	60	449
S. Shikata Japan	9	325 0.8×	104 0.3×	158 0.7×	41 0.5×	127 1.8×	12	392

Countries citing papers authored by A. Bousetta

Since Specialization

Citations

This map shows the geographic impact of A. Bousetta's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Bousetta with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Bousetta more than expected).

Fields of papers citing papers by A. Bousetta

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Bousetta. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Bousetta. The network helps show where A. Bousetta may publish in the future.

Co-authorship network of co-authors of A. Bousetta

This figure shows the co-authorship network connecting the top 25 collaborators of A. Bousetta. A scholar is included among the top collaborators of A. Bousetta based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Bousetta. A. Bousetta is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Bousetta, A. & Andrew Cross. (2005). Adaptive sampling methodology for in-line defect inspection. 25–31. 28 indexed citations

Bousetta, A., et al.. (2002). Comparative study of two KLA-Tencor advanced patterned wafer inspection systems. 141–141. 2 indexed citations

Bensaoula, A., et al.. (1996). The nitridation of GaAs and GaN deposition on GaAs examined by in situ time-of-flight low energy ion scattering and RHEED. Journal of Crystal Growth. 164(1-4). 185–189. 8 indexed citations

Bensaoula, A., et al.. (1996). Investigation of GaN deposition on Si, Al2O3, and GaAs using in situ mass spectroscopy of recoiled ions and reflection high-energy electron diffraction. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(3). 2357–2361. 10 indexed citations

Badi, Nacer, A. Bousetta, A. Bensaoula, & H. Aourag. (1996). Dynamical Charge and Force Constant Calculations in c‐BN under Pressure. physica status solidi (b). 198(2). 721–728. 1 indexed citations

Lü, Ming, et al.. (1996). Electrical properties of boron nitride thin films grown by neutralized nitrogen ion assisted vapor deposition. Applied Physics Letters. 68(5). 622–624. 58 indexed citations

Bensaoula, A., et al.. (1996). The investigation of GaN growth on silicon and sapphire using in-situ time-of-flight low energy ion scattering and RHEED. Journal of Crystal Growth. 164(1-4). 167–174. 11 indexed citations

Bousetta, A., Ming Lü, & A. Bensaoula. (1995). Physical properties of thin carbon nitride films deposited by electron cyclotron resonance assisted vapor deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 13(3). 1639–1643. 79 indexed citations

Badi, Nacer, A. Bousetta, & Miao Lü. (1995). Effect of the growth process on boron nitride thin films electrical properties. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 1 indexed citations

10.

Bousetta, A., Nacer Badi, & A. Bensaoula. (1995). Synthesis and characterization of co-deposited carbon nitride and boron materials. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 1 indexed citations

11.

Talwar, Devki N., Nacer Badi, & A. Bousetta. (1995). Energetic states of isolated native defects in cubic boron pnictides. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 1 indexed citations

12.

Bousetta, A., Ming Lü, A. Bensaoula, & Albert J. Schultz. (1994). Formation of carbon nitride films on Si(100) substrates by electron cyclotron resonance plasma assisted vapor deposition. Applied Physics Letters. 65(6). 696–698. 189 indexed citations

13.

Lü, Ming, et al.. (1994). Growth of cubic boron nitride on Si(100) by neutralized nitrogen ion bombardment. Applied Physics Letters. 64(12). 1514–1516. 44 indexed citations

14.

Bousetta, A., et al.. (1993). Crystallographic dependence of recoiledO−-ion fractions from Ni{100}c(2×2)-O and NiO{100} surfaces. Physical review. B, Condensed matter. 47(4). 2369–2377. 13 indexed citations

15.

Bousetta, A., et al.. (1992). Structural and electrical properties of Co grown on Si(111) by low energy ion beam deposition. Applied Surface Science. 56-58. 480–485. 3 indexed citations

16.

Hsu, C. C., H. Bu, A. Bousetta, J. W. Rabalais, & Peter Nordlander. (1992). Angular dependence of charge-transfer probabilities betweenO−and a Ni{100}-c(2×2)-O surface. Physical Review Letters. 69(1). 188–191. 33 indexed citations

17.

Bousetta, A., Jaap van den Berg, & D.G. Armour. (1992). Formation of 0.05- mu m p/sup +/-n and n/sup +/-p junctions by very low (<500 eV) ion implantation. IEEE Electron Device Letters. 13(5). 250–252. 6 indexed citations

18.

Bousetta, A., Jaap van den Berg, D.G. Armour, & P. C. Zalm. (1991). Si ultrashallow p+n junctions using low-energy boron implantation. Applied Physics Letters. 58(15). 1626–1628. 26 indexed citations

19.

Bousetta, A., et al.. (1991). A silicon MBE-compatible low-energy ion implanter. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 55(1-4). 314–317. 8 indexed citations

20.

Bousetta, A. & W.S. Truscott. (1990). Comparison and origin of electronic states of the free GaAs (100) surface and the GaAs/CaF2 interface. Journal of Applied Physics. 68(11). 5709–5713. 4 indexed citations

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