A. Aissat

888 total citations
96 papers, 677 citations indexed

About

A. Aissat is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, A. Aissat has authored 96 papers receiving a total of 677 indexed citations (citations by other indexed papers that have themselves been cited), including 64 papers in Electrical and Electronic Engineering, 61 papers in Atomic and Molecular Physics, and Optics and 29 papers in Materials Chemistry. Recurrent topics in A. Aissat's work include Semiconductor Quantum Structures and Devices (48 papers), Chalcogenide Semiconductor Thin Films (23 papers) and GaN-based semiconductor devices and materials (22 papers). A. Aissat is often cited by papers focused on Semiconductor Quantum Structures and Devices (48 papers), Chalcogenide Semiconductor Thin Films (23 papers) and GaN-based semiconductor devices and materials (22 papers). A. Aissat collaborates with scholars based in Algeria, France and Tunisia. A. Aissat's co-authors include Jean‐Pierre Vilcot, Mohamed Fathi, H. Mâaref, T. Chtouki, H. Erguig, A. Migalska–Zalas, Y. El Kouari, Abdelmalek Benkouider, Réda Yahiaoui and Amal Bouich and has published in prestigious journals such as Journal of The Electrochemical Society, International Journal of Hydrogen Energy and Renewable Energy.

In The Last Decade

A. Aissat

92 papers receiving 654 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Aissat Algeria 15 457 319 265 118 96 96 677
V.H. Méndez-Garcı́a Mexico 10 246 0.5× 149 0.5× 194 0.7× 57 0.5× 72 0.8× 95 376
Rajat Sharma India 14 355 0.8× 258 0.8× 420 1.6× 388 3.3× 197 2.1× 42 848
Zhifeng Chen China 15 270 0.6× 132 0.4× 233 0.9× 47 0.4× 68 0.7× 54 510
Zhen Lian United States 19 551 1.2× 742 2.3× 253 1.0× 45 0.4× 70 0.7× 34 992
M. Amrani France 18 568 1.2× 361 1.1× 257 1.0× 96 0.8× 170 1.8× 41 886
Xiaorong Luo China 26 1.9k 4.2× 196 0.6× 102 0.4× 234 2.0× 53 0.6× 197 2.2k
V. Veerakumar United States 17 209 0.5× 196 0.6× 338 1.3× 66 0.6× 76 0.8× 33 677
Кiril Кirilov Bulgaria 10 171 0.4× 187 0.6× 88 0.3× 43 0.4× 71 0.7× 53 427
Mei-Li Hsieh Taiwan 10 221 0.5× 101 0.3× 210 0.8× 38 0.3× 111 1.2× 34 410
S.H. Chung United States 9 114 0.2× 95 0.3× 315 1.2× 142 1.2× 127 1.3× 19 479

Countries citing papers authored by A. Aissat

Since Specialization
Citations

This map shows the geographic impact of A. Aissat's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Aissat with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Aissat more than expected).

Fields of papers citing papers by A. Aissat

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Aissat. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Aissat. The network helps show where A. Aissat may publish in the future.

Co-authorship network of co-authors of A. Aissat

This figure shows the co-authorship network connecting the top 25 collaborators of A. Aissat. A scholar is included among the top collaborators of A. Aissat based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Aissat. A. Aissat is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Aissat, A., et al.. (2025). Structural, optical and electrical properties of mixed PbS – SnS thin films deposited by spray pyrolysis. Materials Today Communications. 46. 112923–112923.
2.
Aissat, A., et al.. (2025). The impact of defect density on a CGS/CIGS tandem solar cell’s performance. Solar Energy. 301. 113997–113997.
3.
Aissat, A., et al.. (2024). An enhanced global MPPT method to mitigate overheating in PV systems under partial shading conditions. Renewable Energy. 234. 121187–121187. 17 indexed citations
4.
Aissat, A., et al.. (2024). Efficiency improvement of thin film CuIn1-xGaxSe2 structure for solar cells applications. Micro and Nanostructures. 188. 207801–207801. 2 indexed citations
5.
Aissat, A., et al.. (2024). Electrical simulation and optimization of organic photovoltaic cells based PTB7:PC70BM. Journal of Ovonic Research. 20(2). 163–175. 2 indexed citations
6.
Aissat, A., et al.. (2023). Performance simulation of an InGaSb/GaSb based quantum well structure for laser diode applications. Physics Letters A. 467. 128711–128711.
7.
Aissat, A., et al.. (2023). Modeling and optimization of CuIn1-xGaxSe2/Si1-yGey structure for solar cells applications. Physica B Condensed Matter. 666. 415101–415101. 3 indexed citations
8.
Chtouki, T., et al.. (2023). Modeling and optimization of Sb and N resonance states effect on the band structure of mismatched III-N-V alloys using artificial neural networks. Materials Science and Engineering B. 290. 116312–116312. 9 indexed citations
9.
10.
Zerrouki, Nabil, et al.. (2022). Efficient scene analysis by a deep learning-long short-term memory approach based on polarimetric measurements. The Imaging Science Journal. 70(5). 315–325. 2 indexed citations
11.
Chtouki, T., et al.. (2022). Bandgap energy modeling of the deformed ternary GaAs1-uNu by artificial neural networks. Heliyon. 8(8). e10212–e10212. 15 indexed citations
12.
Aissat, A., et al.. (2022). Optimization of CdZnyS1−y Buffer Layer Properties for a ZnO/CZTSxSe1−x/Mo Solar Cell to Enhance Conversion Efficiency. Journal of Electronic Materials. 52(1). 284–292. 8 indexed citations
13.
Chtouki, T., et al.. (2021). Optimization by simulation for photovoltaic applications of the quaternary semiconductor InGaAsP epitaxed on InP substrate. Optical and Quantum Electronics. 53(3). 10 indexed citations
14.
Aissat, A., et al.. (2018). ANALYSE GÉNÉTIQUE DE QUELQUES GÉNOTYPES D’ORGE (HORDEUM VULGARE L.) ET DE LEURS DÉSCENDANTS EN VUE D’UNE ÉVALUATION DE QUELQUES CARACTÈRES A INTÉRÊT AGRONOMIQUES. 8(1). 792–801. 1 indexed citations
15.
Aissat, A., et al.. (2017). Modeling and optimization of a superstrate solar cell based on Cu2ZnSn(SxSe1-x)4/ZnS structure. DergiPark (Istanbul University). 1(2). 65–74. 3 indexed citations
16.
Aissat, A., et al.. (2015). Theoretical investigation of GaAsNBi/GaAs materials for optoelectronic applications. Materials Science in Semiconductor Processing. 31. 568–572. 17 indexed citations
17.
Aissat, A., et al.. (2015). Improvements of photodiodes structures for communication applications. e76 c. 1–6. 1 indexed citations
18.
Aissat, A., et al.. (2014). Optical Transitions in Quantum Dots. 2(4). 109–111. 1 indexed citations
19.
Fathi, Mohamed, et al.. (2012). Studies of the Effect of a Photons Converter (LDS) on the Characteristic Parameters of the Solar Cells. International Journal of Renewable Energy Research. 2(4). 596–599. 1 indexed citations
20.
Aissat, A., et al.. (2007). THE EFFECT OF NITROGEN ON THE ENERGY GAP OF A STRUCTURE WITH STRAINED QUANTUM WELL CONTAINING GAINNAS/GAAS. 6(2). 159–162. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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