Z. Yang

Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power

Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films

Effects of low energy e‐beam irradiation on cathodoluminescence from GaN

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates

X-ray diffraction of III-nitrides

Realization of high-resistance GaN by controlling the annealing pressure of the nucleation layer in metal-organic chemical vapor deposition

High temperature dependence of the density of two-dimensional electron gas in Al0.18Ga0.82N/GaN heterostructures

Reduction of threading edge dislocation density in n-type GaN by Si delta-doping